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Complete Guide to Semiconductor Devices, 2nd Edition, Kwok K. Ng
Complete Guide to Semiconductor Devices, 2nd Edition

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Автор: Kwok K. Ng
Название:  Complete Guide to Semiconductor Devices, 2nd Edition   (Полное руководство по полупроводникам)
Издательство: Wiley
Классификация:
Электронная техника

ISBN: 0471202401
ISBN-13(EAN): 9780471202400
ISBN: 0-471-20240-1
ISBN-13(EAN): 978-0-471-20240-0
Обложка/Формат: Hardback
Страницы: 768
Вес: 1.212 кг.
Дата издания: August 14, 2002
Язык: ENG
Издание: 2 rev ed
Иллюстрации: Ill.
Размер: 24.33 x 15.80 x 4.09 cm
Читательская аудитория: Postgraduate, research & scholarly
Ссылка на Издательство: Link
Рейтинг:
Поставляется из: Англии
Описание: Semiconductor devices are the basic components of integrated circuits and are responsible for the startling rapid growth of the electronics industry. This book gives a collection of semiconductor devices, identifying 74 major devices and more than 200 variations of these devices. It is intended for students, researchers, lawyers, and others.
Дополнительное описание: Кол-во стр.: 768
Формат: 239 x 160
Дата издания: 2002
Илюстрации: Illustrations
Вес: 1162
Круг читателей: undergraduate; postgraduate; research, professional; technical, vocational


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Semiconductor Physics And Devices

Автор: Neamen
Название: Semiconductor Physics And Devices
ISBN: 0071198628 ISBN-13(EAN): 9780071198622
Издательство: McGraw-Hill
Цена: 2534 р.
Наличие на складе: Поставка под заказ.

Описание: "Neamen's Semiconductor Physics and Devices, Third Edition" deals with the electrical properties and characteristics of semiconductor materials and devices. The goal of this book is to bring together quantum mechanics, the quantum theory of solids, semiconductor material physics, and semiconductor device physics in a clear and understandable way.

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Introduction to Semiconductor Devices

Автор: Kevin F. Brennan
Название: Introduction to Semiconductor Devices
ISBN: 0521831504 ISBN-13(EAN): 9780521831505
Издательство: Cambridge Academ
Рейтинг:
Цена: 7887 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: From semiconductor fundamentals to state-of-the-art semiconductor devices used in the telecommunications and computing industries, this book provides a solid grounding in the most important devices used in the hottest areas of electronic engineering today. The book includes coverage of future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. The book begins with a discussion of the fundamental properties of semiconductors. Next, state-of-the-art field effect devices are described, including MODFETs and MOSFETs. Short channel effects and the challenges faced by continuing miniaturization are then addressed. The rest of the book discusses the structure, behavior, and operating requirements of semiconductor devices used in lightwave and wireless telecommunications systems. This is both an excellent senior/graduate text, and a valuable reference for engineers and researchers in the field.

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Rapid Thermal Processing for Future Semiconductor Devices,

Автор: H. Fukuda
Название: Rapid Thermal Processing for Future Semiconductor Devices,
ISBN: 0444513396 ISBN-13(EAN): 9780444513397
Издательство: Elsevier Science
Рейтинг:
Цена: 9086 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: A collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. It covers the following areas such as advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe and hetero-structure.

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Noise in Semiconductor Devices / Modeling and Simulation

Автор: Bonani Fabrizio, Ghione Giovanni
Название: Noise in Semiconductor Devices / Modeling and Simulation
ISBN: 3540665838 ISBN-13(EAN): 9783540665830
Издательство: Springer
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Цена: 12233 р.
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Описание: The book deals with the numerical simulation of noise in semiconductor devices operating in linear (small-signal) and nonlinear (large-signal) conditions. The main topics of the book are: An overview of the physical basis of noise in semiconductor devices, a detailed treatment of numerical noise simulation in small-signal conditions, and a presentation of innovative developments in the noise simulation of semiconductor devices operating in large-signal quasi-periodic conditions. The main benefit that the reader will derive from the book is the ability to understand, and, if needed, replicate the development of numerical, physics-based noise simulation of semiconductor devices in small-signal and large-signal conditions.

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Radiation Effects in Advanced Semiconductor Materials and Devices

Автор: Claeys C., Simoen E.
Название: Radiation Effects in Advanced Semiconductor Materials and Devices
ISBN: 3540433937 ISBN-13(EAN): 9783540433934
Издательство: Springer
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Цена: 14392 р.
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Описание: In the modern semiconductor industry, there is a growing need to understand and combat potential radiation damage problems. Space applications are an obvious case, but, beyond that, today's device and circuit fabrication rely on increasing numbers of processing steps that involve an aggressive environment where inadvertant radiation damage can occur. This book is both aimed at post-graduate researchers seeking an overview of the field, and will also be immensely useful for nuclear and space engineers and even process engineers. A background knowledge of semiconductor and device physics is assumed, but the basic concepts are all briefly summarized. Finally the book outlines the shortcomings of present experimental and modeling techniques and gives an outlook on future developments.

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Simulation of Semiconductor Processes and Devices 2001 / SISPAD 01

Автор: Tsoukalas Dimitris, Tsamis Christos
Название: Simulation of Semiconductor Processes and Devices 2001 / SISPAD 01
ISBN: 3211837086 ISBN-13(EAN): 9783211837085
Издательство: Springer
Рейтинг:
Цена: 15831 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens.

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Physics of Semiconductor Devices

Автор: Colinge J.-P., Colinge C.A.
Название: Physics of Semiconductor Devices
ISBN: 1402070187 ISBN-13(EAN): 9781402070181
Издательство: Springer
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Цена: 14392 р.
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Описание: Physics of Semiconductor Devices is a textbook aimed at college undergraduate and graduate teaching. It covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-channel effects, low-dimensional devices and single-electron transistors. As a prerequisite, this text requires mathematics through differential equations and modern physics where students are introduced to quantum mechanics. Concepts are introduced to the reader in a simple way, often using comparisons to everyday-life experiences such as simple fluid mechanics. They are then explained in depth and mathematical developments are fully described. Physics of Semiconductor Devices contains a list of problems that can be used as homework assignments or can be solved in class to exemplify the theory. Many of these problems make use of Matlab and are aimed at illustrating theoretical concepts in a graphical manner. A series of these Matlab problems is based on a simple finite-element solution of semiconductor equations. These yield the exact solution to equations that have no analytical solutions and are usually solved using approximations, such as the depletion approximation. The exact numerical solution can then be graphically compared to the solution using the approximation. The different chapters of Physics of Semiconductor Devices cover the following material: Energy Band Theory. Theory of Electrical Conduction. Generation/Recombination Phenomena. The PN Junction Diode. Metal-semiconductor contacts. JFET and MESFET. The MOS Transistor. The Bipolar Transistor. Heterojunction Devices. Quantum-Effect Devices. Semiconductor Processing.

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Simulation of Semiconductor Processes and Devices 2004 / SISPAD 2004

Автор: Wachutka Gerhard, Schrag Gabriele
Название: Simulation of Semiconductor Processes and Devices 2004 / SISPAD 2004
ISBN: 3211224688 ISBN-13(EAN): 9783211224687
Издательство: Springer
Рейтинг:
Цена: 15831 р.
Наличие на складе: Нет в наличии.

Описание: This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004.The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world.Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.

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Defects in High-k Gate Dielectric Stacks / Nano-Electronic Semiconductor Devices

Автор: Gusev Evgeni
Название: Defects in High-k Gate Dielectric Stacks / Nano-Electronic Semiconductor Devices
ISBN: 1402043651 ISBN-13(EAN): 9781402043659
Издательство: Springer
Рейтинг:
Цена: 19173 р.
Наличие на складе: Нет в наличии.

Описание: The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.

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Physics of Semiconductor Devices

Автор: Colinge J.-P., Colinge C.A.
Название: Physics of Semiconductor Devices
ISBN: 0387285237 ISBN-13(EAN): 9780387285238
Издательство: Springer
Рейтинг:
Цена: 10074 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Physics of Semiconductor Devices covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-channel effects, low-dimensional devices and single-electron transistors. Concepts are introduced to the reader in a simple way, often using comparisons to everyday-life experiences such as simple fluid mechanics. They are then explained in depth and mathematical developments are fully described. Physics of Semiconductor Devices contains a list of problems that can be used as homework assignments or can be solved in class to exemplify the theory. Many of these problems make use of Matlab and are aimed at illustrating theoretical concepts in a graphical manner.

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Nanowires and Nanobelts: Materials, Properties and Devices / Volume 1: Metal and Semiconductor Nanowires

Автор: Wang Zhong Lin
Название: Nanowires and Nanobelts: Materials, Properties and Devices / Volume 1: Metal and Semiconductor Nanowires
ISBN: 0387287051 ISBN-13(EAN): 9780387287058
Издательство: Springer
Рейтинг:
Цена: 10074 р.
Наличие на складе: Нет в наличии.

Описание: This two volume reference, Nanowires and Nanobelts: Materials, Properties and Devices, provides a comprehensive introduction to the field and reviews the current state of the research. Volume 1, Metal and Semiconductor Nanowires covers a wide range of materials systems, from noble metals (such as Au, Ag, Cu), single element semiconductors (such as Si and Ge), compound semiconductors (such as InP, CdS and GaAs as well as heterostructures), nitrides (such as GaN and Si3N4) to carbides (such as SiC). The objective of this volume is to cover the synthesis, properties and device applications of nanowires based on metal and semiconductor materials. The volume starts with a review on novel electronic and optical nanodevices, nanosensors and logic circuits that have been built using individual nanowires as building blocks. Then, the theoretical background for electrical properties and mechanical properties of nanowires is given. The molecular nanowires, their quantized conductance, and metallic nanowires synthesized by chemical technique will be introduced next. Finally, the volume covers the synthesis and properties of semiconductor and nitrides nanowires. Volume 2, Nanowires and Nanobelts of Functional Materials covers a wide range of materials systems, from functional oxides (such as ZnO, SnO2, and In2O3), structural ceramics (such as MgO, SiO2 and Al2O3), composite materials (such as Si-Ge, SiC- SiO2), to polymers. This volume focuses on the synthesis, properties and applications of nanowires and nanobelts based on functional materials. Novel devices and applications made from functional oxide nanowires and nanobelts will be presented first, showing their unique properties and applications. The majority of the text will be devoted to the synthesis and properties of nanowires and nanobelts of functional oxides. Finally, sulphide nanowires, composite nanowires and polymer nanowires will be covered.

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Defects in HIgh-k Gate Dielectric Stacks / Nano-Electronic Semiconductor Devices

Автор: Gusev Evgeni
Название: Defects in HIgh-k Gate Dielectric Stacks / Nano-Electronic Semiconductor Devices
ISBN: 140204366X ISBN-13(EAN): 9781402043666
Издательство: Springer
Рейтинг:
Цена: 16093 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.

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