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Complete Guide to Semiconductor Devices, 2nd Edition, Kwok K. Ng

Complete Guide to Semiconductor Devices, 2nd Edition

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Автор: Kwok K. Ng
Название:  Complete Guide to Semiconductor Devices, 2nd Edition   (Полное руководство по полупроводникам)
Издательство: Wiley
Классификация:
Электронная техника

ISBN: 0471202401
ISBN-13(EAN): 9780471202400
ISBN: 0-471-20240-1
ISBN-13(EAN): 978-0-471-20240-0
Обложка/Формат: Hardback
Страницы: 768
Вес: 1.212 кг.
Дата издания: August 14, 2002
Язык: ENG
Издание: 2 rev ed
Иллюстрации: Ill.
Размер: 24.33 x 15.80 x 4.09 cm
Читательская аудитория: Postgraduate, research & scholarly
Ссылка на Издательство: Link
Рейтинг:
Поставляется из: Англии
Описание: Semiconductor devices are the basic components of integrated circuits and are responsible for the startling rapid growth of the electronics industry. This book gives a collection of semiconductor devices, identifying 74 major devices and more than 200 variations of these devices. It is intended for students, researchers, lawyers, and others.
Дополнительное описание: Кол-во стр.: 768
Формат: 239 x 160
Дата издания: 2002
Илюстрации: Illustrations
Вес: 1162
Круг читателей: undergraduate; postgraduate; research, professional; technical, vocational



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Semiconductor Physics And Devices

Автор: Neamen
Название: Semiconductor Physics And Devices
ISBN: 0071198628 ISBN-13(EAN): 9780071198622
Издательство: McGraw-Hill
Цена: 2534 р.
Наличие на складе: Поставка под заказ.
Описание: "Neamen's Semiconductor Physics and Devices, Third Edition" deals with the electrical properties and characteristics of semiconductor materials and devices. The goal of this book is to bring together quantum mechanics, the quantum theory of solids, semiconductor material physics, and semiconductor device physics in a clear and understandable way.
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Rapid Thermal Processing for Future Semiconductor Devices,

Автор: H. Fukuda
Название: Rapid Thermal Processing for Future Semiconductor Devices,
ISBN: 0444513396 ISBN-13(EAN): 9780444513397
Издательство: Elsevier Science
Цена: 8470 р.
Наличие на складе: Есть у поставщика.Поставка под заказ.
Описание: A collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. It covers the following areas such as advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe and hetero-structure.
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Noise in Semiconductor Devices / Modeling and Simulation

Автор: Bonani Fabrizio, Ghione Giovanni
Название: Noise in Semiconductor Devices / Modeling and Simulation
ISBN: 3540665838 ISBN-13(EAN): 9783540665830
Издательство: Springer
Цена: 8851 р.
Наличие на складе: Есть у поставщика.Поставка под заказ.
Описание: The book deals with the numerical simulation of noise in semiconductor devices operating in linear (small-signal) and nonlinear (large-signal) conditions. The main topics of the book are: An overview of the physical basis of noise in semiconductor devices, a detailed treatment of numerical noise simulation in small-signal conditions, and a presentation of innovative developments in the noise simulation of semiconductor devices operating in large-signal quasi-periodic conditions. The main benefit that the reader will derive from the book is the ability to understand, and, if needed, replicate the development of numerical, physics-based noise simulation of semiconductor devices in small-signal and large-signal conditions.
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Simulation of Semiconductor Processes and Devices 2004 / SISPAD 2004

Автор: Wachutka Gerhard, Schrag Gabriele
Название: Simulation of Semiconductor Processes and Devices 2004 / SISPAD 2004
ISBN: 3211224688 ISBN-13(EAN): 9783211224687
Издательство: Springer
Цена: 8081 р.
Наличие на складе: Нет в наличии.
Описание: This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004.The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world.Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.
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Simulation of Semiconductor Processes and Devices 2007 / SISPAD 2007

Автор: Grasser Tibor, Selberherr Siegfried
Название: Simulation of Semiconductor Processes and Devices 2007 / SISPAD 2007
ISBN: 3211728600 ISBN-13(EAN): 9783211728604
Издательство: Springer
Цена: 8851 р.
Наличие на складе: Есть у поставщика.Поставка под заказ.
Описание: This volume will contain the proceedings of the 12th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2007), which will take place in Vienna, Austria, on September 25-27, 2007. Like the previous meetings, SISPAD 2007 will provide a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. Topics covered will be device simulation, including transport in nano-structures models of VLSI device scaling limits, quantum effects, and novel devices process simulation, including both continuum and atomistic approaches equipment, topography, and lithography simulation interconnect modeling and algorithms including noise and parasitic effects compact device modeling for circuit simulation integration of circuit and device simulation user interfaces and visualization high performance computing, numerical methods and algorithms mesh generation and adaptation simulation of such devices as microsensor and optoelectronics devices benchmarking, calibration, and verification of simulators.
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Semiconductor Devices: Physics and Technology, 2nd Edition

Автор: Simon M. Sze
Название: Semiconductor Devices: Physics and Technology, 2nd Edition
ISBN: 0471333727 ISBN-13(EAN): 9780471333722
Издательство: Wiley
Цена: 11352 р.
Наличие на складе: Нет в наличии.
Описание: This book is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.
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Theory of Modern Electronic Semiconductor Devices

Автор: Kevin F. Brennan
Название: Theory of Modern Electronic Semiconductor Devices
ISBN: 0471415413 ISBN-13(EAN): 9780471415411
Издательство: Wiley
Цена: 12672 р.
Наличие на складе: Нет в наличии.
Описание: To help professionals keep up with the rapid pace of development in the semiconductor device industry, this text offers the most up-to-date treatment of semiconductor devices used in telecommunications, computers, and many other high-tech applications.
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Introduction to Semiconductor Devices

Автор: Kevin F. Brennan
Название: Introduction to Semiconductor Devices
ISBN: 0521831504 ISBN-13(EAN): 9780521831505
Издательство: Cambridge Academ
Цена: 7887 р.
Наличие на складе: Есть у поставщика.Поставка под заказ.
Описание: From semiconductor fundamentals to state-of-the-art semiconductor devices used in the telecommunications and computing industries, this book provides a solid grounding in the most important devices used in the hottest areas of electronic engineering today. The book includes coverage of future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. The book begins with a discussion of the fundamental properties of semiconductors. Next, state-of-the-art field effect devices are described, including MODFETs and MOSFETs. Short channel effects and the challenges faced by continuing miniaturization are then addressed. The rest of the book discusses the structure, behavior, and operating requirements of semiconductor devices used in lightwave and wireless telecommunications systems. This is both an excellent senior/graduate text, and a valuable reference for engineers and researchers in the field.
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Radiation Effects in Advanced Semiconductor Materials and Devices

Автор: Claeys C., Simoen E.
Название: Radiation Effects in Advanced Semiconductor Materials and Devices
ISBN: 3540433937 ISBN-13(EAN): 9783540433934
Издательство: Springer
Цена: 8081 р.
Наличие на складе: Есть у поставщика.Поставка под заказ.
Описание: In the modern semiconductor industry, there is a growing need to understand and combat potential radiation damage problems. Space applications are an obvious case, but, beyond that, today's device and circuit fabrication rely on increasing numbers of processing steps that involve an aggressive environment where inadvertant radiation damage can occur. This book is both aimed at post-graduate researchers seeking an overview of the field, and will also be immensely useful for nuclear and space engineers and even process engineers. A background knowledge of semiconductor and device physics is assumed, but the basic concepts are all briefly summarized. Finally the book outlines the shortcomings of present experimental and modeling techniques and gives an outlook on future developments.
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Simulation of Semiconductor Processes and Devices 2001 / SISPAD 01

Автор: Tsoukalas Dimitris, Tsamis Christos
Название: Simulation of Semiconductor Processes and Devices 2001 / SISPAD 01
ISBN: 3211837086 ISBN-13(EAN): 9783211837085
Издательство: Springer
Цена: 6926 р.
Наличие на складе: Есть у поставщика.Поставка под заказ.
Описание: This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens.
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Physics of Semiconductor Devices

Автор: Colinge J.-P., Colinge C.A.
Название: Physics of Semiconductor Devices
ISBN: 1402070187 ISBN-13(EAN): 9781402070181
Издательство: Springer
Цена: 12316 р.
Наличие на складе: Есть у поставщика.Поставка под заказ.
Описание: Physics of Semiconductor Devices is a textbook aimed at college undergraduate and graduate teaching. It covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-channel effects, low-dimensional devices and single-electron transistors. As a prerequisite, this text requires mathematics through differential equations and modern physics where students are introduced to quantum mechanics. Concepts are introduced to the reader in a simple way, often using comparisons to everyday-life experiences such as simple fluid mechanics. They are then explained in depth and mathematical developments are fully described. Physics of Semiconductor Devices contains a list of problems that can be used as homework assignments or can be solved in class to exemplify the theory. Many of these problems make use of Matlab and are aimed at illustrating theoretical concepts in a graphical manner. A series of these Matlab problems is based on a simple finite-element solution of semiconductor equations. These yield the exact solution to equations that have no analytical solutions and are usually solved using approximations, such as the depletion approximation. The exact numerical solution can then be graphically compared to the solution using the approximation. The different chapters of Physics of Semiconductor Devices cover the following material: Energy Band Theory. Theory of Electrical Conduction. Generation/Recombination Phenomena. The PN Junction Diode. Metal-semiconductor contacts. JFET and MESFET. The MOS Transistor. The Bipolar Transistor. Heterojunction Devices. Quantum-Effect Devices. Semiconductor Processing.
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Defects in High-k Gate Dielectric Stacks / Nano-Electronic Semiconductor Devices

Автор: Gusev Evgeni
Название: Defects in High-k Gate Dielectric Stacks / Nano-Electronic Semiconductor Devices
ISBN: 1402043651 ISBN-13(EAN): 9781402043659
Издательство: Springer
Цена: 12243 р.
Наличие на складе: Нет в наличии.
Описание: The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.
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