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Fundamentals of Semiconductor Fabrication, May

Fundamentals of Semiconductor Fabrication

јвтор: May
Ќазвание:  Fundamentals of Semiconductor Fabrication   (ќсновы производства полупроводников)
»здательство: Wiley
 лассификаци€:
Ёлектронна€ техника

ISBN: 0471232793
ISBN-13(EAN): 9780471232797
ISBN: 0-471-23279-3
ISBN-13(EAN): 978-0-471-23279-7
ќбложка/‘ормат: Hardcover
—траницы: 320
¬ес: 0.707 кг.
ƒата издани€: 28.08.2007
—ери€: Components & Devices
язык: ENG
»ллюстрации: Illustrations
–азмер: 26.01 x 18.29 x 1.75 cm
„итательска€ аудитори€: Professional & vocational
—сылка на »здательство: Link
–ейтинг:
ѕоставл€етс€ из: јнглии
ќписание: From crystal growth to integrated devices and circuits, this new book offers a basic, up-to-date introduction to semiconductor fabrication technology, including both the theoretical and practical aspects of all major steps in the fabrication sequence.
ƒополнительное описание: Paperback 320 pages August 2007


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Semiconductor Device and Failure Analysis : Using Photon Emission Microscopy

јвтор: Wai Kin Chim
Ќазвание: Semiconductor Device and Failure Analysis : Using Photon Emission Microscopy
ISBN: 047149240X ISBN-13(EAN): 9780471492405
»здательство: Wiley
÷ена: 11000 р.
Ќаличие на складе: ѕоставка под заказ.
ќписание: Fault detection has become increasingly difficult as integrated circuits become more and more complex. Photon Emission Microopy (PEM) is a physical failure analysis technique which locates and identifies faults in integrated circuits.
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Fundamentals of Electro-Optic Systems Design

јвтор: Karp
Ќазвание: Fundamentals of Electro-Optic Systems Design
ISBN: 1107021391 ISBN-13(EAN): 9781107021396
»здательство: Cambridge Academ
÷ена: 7187 р.
Ќаличие на складе: ѕоставка под заказ.
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Electronic Circuits - Fundamentals & Applications, 3Rd Ed

јвтор: Mike Tooley
Ќазвание: Electronic Circuits - Fundamentals & Applications, 3Rd Ed
ISBN: 0750669233 ISBN-13(EAN): 9780750669238
»здательство: Taylor&Francis
÷ена: 2199 р.
Ќаличие на складе: ѕоставка под заказ.
ќписание: Provides the information about the fundamentals of electronics, detailing the knowledge necessary to understand the operation of a range of electronic circuits: amplifiers, logic circuits, power supplies and oscillators. This book is accompanied by a website that offers the reader a set of tools that can be used to simplify circuit calculations.
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Microchip Fabrication: A Practical Guide to Semiconductor Pr

јвтор: Van Zant Peter
Ќазвание: Microchip Fabrication: A Practical Guide to Semiconductor Pr
ISBN: 0071821015 ISBN-13(EAN): 9780071821018
»здательство: McGraw-Hill
÷ена: 7127 р.
Ќаличие на складе: ѕоставка под заказ.
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Fundamentals of Semiconductor Manufacturing and Process Control

јвтор: May, Gary S.
Ќазвание: Fundamentals of Semiconductor Manufacturing and Process Control
ISBN: 0471784060 ISBN-13(EAN): 9780471784067
»здательство: Wiley
÷ена: 8976 р.
Ќаличие на складе: ѕоставка под заказ.
ќписание: A practical guide to semiconductor manufacturing from process control to yield modeling and experimental design. This book covers various issues involved in manufacturing microelectronic devices and circuits, including fabrication sequences, process control, experimental design, process modeling, yield modeling, and CIM/CAM systems.
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Semiconductor-Laser Fundamentals

јвтор: Chow
Ќазвание: Semiconductor-Laser Fundamentals
ISBN: 3540641661 ISBN-13(EAN): 9783540641667
»здательство: Springer
÷ена: 6542 р.
Ќаличие на складе: Ќет в наличии.
ќписание: Presents a discussion of the semiconductor-laser gain medium. This work analyzes the optical and electronic properties of semiconductors, particularly, semiconductor quantum-well systems, covering a variety of near-infrared systems with or without strain, as well as wide-gap materials such as the group-III nitride compounds or the II-VI materials.
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Fundamentals of power semiconductor devices

јвтор: Baliga, B,jayant
Ќазвание: Fundamentals of power semiconductor devices
ISBN: 0387473130 ISBN-13(EAN): 9780387473130
»здательство: Springer
÷ена: 10777 р.
Ќаличие на складе: Ќет в наличии.
ќписание: Offers an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. This book shows analytical models for explaining the operation of various power semiconductor devices. It is suitable for practicing engineers in the power semiconductor device community.
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Inelastic Light Scattering of Semiconductor Nanostructures / Fundamentals and Recent Advances

јвтор: Sch√Љller Christian
Ќазвание: Inelastic Light Scattering of Semiconductor Nanostructures / Fundamentals and Recent Advances
ISBN: 3540365257 ISBN-13(EAN): 9783540365259
»здательство: Springer
÷ена: 10392 р.
Ќаличие на складе: Ќет в наличии.
ќписание: Semiconductor nanostructures are a field of enormous and still-growing research interest. On one hand, they are already realized in mass products, e.g., in high-electron-mobility field-effect transistors and quantum-well lasers. On the other hand, they allow, in specially tailored systems, the investigation of fundamental properties, such as many-particle interactions of electrons in reduced dimensions. This book attempts to fill the gap between general semiconductor textbooks and research articles. It provides (i) an introduction into the basic concepts of inelastic light scattering on semiconductor nanostructures and into their fabrication and basic properties, and, (ii) a description of the most striking recent advances in this field. Each chapter is as self-contained as possible. The monograph should interest researchers, experimentalists as well as theorists, and research students working in the field. It should also be interesting for graduate students with knowledge in solid-state physics and quantum mechanics who are interested in optical spectroscopies of semiconductors.
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Nanoscaled Semiconductor-on-Insulator Structures and Devices

јвтор: Hall S., Nazarov A.N., Lysenko V.S.
Ќазвание: Nanoscaled Semiconductor-on-Insulator Structures and Devices
ISBN: 1402063792 ISBN-13(EAN): 9781402063794
»здательство: Springer
÷ена: 5387 р.
Ќаличие на складе: Ќет в наличии.
ќписание: The book details many of the key issues associated with the scaling to nano-dimensions of silicon-on-insulator structures. Some papers offer new insight particularly at the device/circuit interface as appropriate for SOI which is fast becoming a mainstream technology. One of the key issues concerns mobility degradation in SOI films less than about 5nm. The advantages of combining scaled SOI devices with high permittivity (k) dielectric indicates that potential solutions are indeed available down to the 22nm node even with 5nm SOI films. A further key issue and potential вАШshow stopperвАЩ for SOI CMOS is highlighted in a number of invited and contributed papers addressing atomistic level effects. Results are presented for Monte Carlo and drift/diffusion modelling together with device compact models and circuit level simulation and this provided for a broad exposure of the problems from intrinsic physics to the circuit level. The scaling to nano-dimensions takes the technology into the realms of quantum effects and a number of papers addressed this aspect from both the technological and physics aspects. The scope of potential applications for quantum dots, quantum wires and nanotubes are considered. The use of semiconductor materials other than Si, on insulator, is featured in some sections of the book. The potential of III/V, Ge and other materials to facilitate continuation down the roadmap is illustrated by a review of the state-of-the-art.
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Low-Dimensional Semiconductor Structures

јвтор: Edited by Keith Barnham
Ќазвание: Low-Dimensional Semiconductor Structures
ISBN: 0521591031 ISBN-13(EAN): 9780521591034
»здательство: Cambridge Academ
÷ена: 4645 р.
Ќаличие на складе: ѕоставка под заказ.
ќписание: Low-Dimensional Semiconductor Structures provides a seamless, atoms-to-devices introduction to the latest quantum heterostructures. It covers their fabrication, their electronic, optical, and transport properties, their role in exploring new physical phenomena, and their utilization in devices. The authors begin with a detailed description of the epitaxial growth of semiconductors. They then deal with the physical behaviour of electrons and phonons in low-dimensional structures. A discussion of localization effects and quantum transport phenomena is followed by coverage of the optical properties of quantum wells. They then go on to discuss nonlinear optics in quantum heterostructures. The final chapters deal with semiconductor lasers, mesoscopic devices, and high-speed heterostructure devices. The book contains many exercises and comprehensive references. It is suitable as a textbook for graduate-level courses in electrical engineering and applied physics. It will also be of interest to engineers involved in the development of new semiconductor devices.
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Principles of semiconductor laser diodes and amplifiers: analysis and transmission line laser modeling

Ќазвание: Principles of semiconductor laser diodes and amplifiers: analysis and transmission line laser modeling
ISBN: 1860943411 ISBN-13(EAN): 9781860943416
»здательство: World Scientific Publishing
÷ена: 5931 р.
Ќаличие на складе: ѕоставка под заказ.
ќписание: Optical communications technology is growing increasingly in importance, with a rapid pace of development. Innovative optical devices have emerged from the integration of semiconductor laser diodes, amplifiers and filters with optical waveguide technology. This well-researched volume traces the evolution of semiconductor laser amplifiers (SLAs) from these technologies.

Focusing on the principle applications of SLAs, the author illustrates the growing importance of these functional components in the future of optical communications systems. This book will provide engineering and science students with a basic understanding of laser diode and optical amplification through the analysis of the performance characteristics of these devices both in theory and application. Practising device engineers wishing to consolidate their knowledge in lightwave technology will also find this book an invaluable reference.

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Iii-nitride semiconductor materials

Ќазвание: Iii-nitride semiconductor materials
ISBN: 1860946364 ISBN-13(EAN): 9781860946363
»здательство: World Scientific Publishing
÷ена: 18713 р.
Ќаличие на складе: ѕоставка под заказ.
ќписание: III-Nitride semiconductor materials - (Al, In, Ga)N - are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.

Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising.

It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals.

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