Îïèñàíèå: The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.

Îïèñàíèå: Physics of Semiconductor Devices covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-channel effects, low-dimensional devices and single-electron transistors. Concepts are introduced to the reader in a simple way, often using comparisons to everyday-life experiences such as simple fluid mechanics. They are then explained in depth and mathematical developments are fully described. Physics of Semiconductor Devices contains a list of problems that can be used as homework assignments or can be solved in class to exemplify the theory. Many of these problems make use of Matlab and are aimed at illustrating theoretical concepts in a graphical manner.

Îïèñàíèå: The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.

Îïèñàíèå: The book details many of the key issues associated with the scaling to nano-dimensions of silicon-on-insulator structures. Some papers offer new insight particularly at the device/circuit interface as appropriate for SOI which is fast becoming a mainstream technology. One of the key issues concerns mobility degradation in SOI films less than about 5nm. The advantages of combining scaled SOI devices with high permittivity (k) dielectric indicates that potential solutions are indeed available down to the 22nm node even with 5nm SOI films. A further key issue and potential â€˜show stopperâ€™ for SOI CMOS is highlighted in a number of invited and contributed papers addressing atomistic level effects. Results are presented for Monte Carlo and drift/diffusion modelling together with device compact models and circuit level simulation and this provided for a broad exposure of the problems from intrinsic physics to the circuit level. The scaling to nano-dimensions takes the technology into the realms of quantum effects and a number of papers addressed this aspect from both the technological and physics aspects. The scope of potential applications for quantum dots, quantum wires and nanotubes are considered. The use of semiconductor materials other than Si, on insulator, is featured in some sections of the book. The potential of III/V, Ge and other materials to facilitate continuation down the roadmap is illustrated by a review of the state-of-the-art.

Îïèñàíèå: This fifth edition of Principles of Lasers includes corrections to the previous edition as well as being the first available as an ebook. Its mission remains to provide a broad, unified description of laser behavior, physics, technology, and applications.

Àâòîð: Stuber, Gordon L. Íàçâàíèå: Principles of Mobile Communication ISBN: 1461403634 ISBN-13(EAN): 9781461403630 Èçäàòåëüñòâî: Springer Ðåéòèíã: Öåíà: 11719 ð. Íàëè÷èå íà ñêëàäå: Íåò â íàëè÷èè.

Îïèñàíèå: Principles of Mobile Communication, Third Edition, is an authoritative treatment of the fundamentals of mobile communications. This book stresses the fundamentals of physical-layer wireless and mobile communications engineering that are important for the design of any wireless system. This book differs from others in the field by stressing mathematical modeling and analysis. It includes many detailed derivations from first principles, extensive literature references, and provides a level of depth that is necessary for graduate students wishing to pursue research on this topic. The book's focus will benefit students taking formal instruction and practicing engineers who are likely to already have familiarity with the standards and are seeking to increase their knowledge of this important subject. Major changes from the second edition: 1. Updated discussion of wireless standards (Chapter 1). 2. Updated treatment of land mobile radio propagation to include space-time correlation functions, mobile-to-mobile (or vehicle-to-vehicle) channels, multiple-input multiple-output (MIMO) channels, improved simulation models for land mobile radio channels, and 3G cellular simulation models. 3. Updated treatment of modulation techniques and power spectrum to include Nyquist pulse shaping and linearized Gaussian minimum shift keying (LGMSK). 4. Updated treatment of antenna diversity techniques to include optimum combining, non-coherent square-law combining, and classical beamforming. 5. Updated treatment of error control coding to include space-time block codes, the BCJR algorithm, bit interleaved coded modulation, and space-time trellis codes. 6. Updated treatment of spread spectrum to include code division multiple access (CDMA) multi-user detection techniques. 7. A completely new chapter on multi-carrier techniques to include the performance of orthogonal frequency division multiplexing (OFDM) on intersymbol interference (ISI) channels, OFDM residual ISI cancellation, single-carrier frequency domain equalization (SC-FDE), orthogonal frequency division multiple access (OFDMA) and single-carrier frequency division multiple access (SC-FDMA). 8. Updated discussion of frequency planning to include OFDMA frequency planning. 9. Updated treatment of CDMA cellular systems to include hierarchical CDMA cellular architectures and capacity analysis. 10. Updated treatment of radio resource management to include CDMA soft handoff analysis. Includes numerous homework problems throughout.

Îïèñàíèå: Since the breakthrough demonstration of GaN-based laser diodes by Shuji Nakamura one decade ago, the field of GaN-based semiconductor devices has experienced a tremendous growth worldwide. Thus far, most research focused on nitride material properties and technology. As material properties and device fabrication become more predictable, device design and simulation is gaining increasing attention. Similar developments are known from other semiconductors (Si, GaAs, InP) where computer simulation is now an important part of device design and analysis.

Îïèñàíèå: The main objective of this book is to provide an introductory perspective of the basic principles of semiconductors, being an integrated overview of the basic properties, applications, and characterization of semiconductors in a single volume. This book is suitable for both undergraduate and graduate students, and for researchers, working in a wide variety of fields in physical and engineering sciences, who require an introductory and concise description of the field of semiconductors.

Îïèñàíèå: This volume provides summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor
heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, progress on advanced semiconductor heterostructures spans a truly
remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern
technology.

At the heart of these advances is the ability to design and control the properties of semiconductor devices on the nanoscale. As an example, the intersubband
lasers discussed in this work have a broad range of previously unobtainable characteristics and associated applications as a result of the nanoscale dimensional control of the
underlying semiconductor heterostructures. As this volume illustrates, an astounding variety of heterostructures can be fabricated with current technology; t
e potentially widespread use of layered quantum dots fabricated with nanoscale precision in biological applications opens up exciting advances in medicine.

In addition,
many more examples of the remarkable impact being made through the use of semiconductor heterostructures are given. The summaries in this text should provide timely insights into
what we know about selected areas of advanced semiconductor heterostructures and also provide foundations for further developments.

Îïèñàíèå: Optical communications technology is growing increasingly in importance, with a rapid pace of development. Innovative optical devices have emerged from
the integration of semiconductor laser diodes, amplifiers and filters with optical waveguide technology. This well-researched volume traces the evolution of semiconductor laser amplifiers
(SLAs) from these technologies.

Focusing on the principle applications of SLAs, the author illustrates the growing importance of these functional components in the future of
optical communications systems. This book will provide engineering and science students with a basic understanding of laser diode and optical amplification through the analysis of the
performance characteristics of these devices both in theory and application. Practising device engineers wishing to consolidate their knowledge in lightwave technology will also find
this book an invaluable reference.

Îïèñàíèå: This volume traces the evolution of semiconductor laser amplifiers (SLAs). Focusing on the principle applications of SLAs, the author illustrates the growing importance of these functional components in the future of optical communications systems.

Îïèñàíèå: Physics of Semiconductor Devices is a textbook aimed at college undergraduate and graduate teaching. It covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-channel effects, low-dimensional devices and single-electron transistors. As a prerequisite, this text requires mathematics through differential equations and modern physics where students are introduced to quantum mechanics. Concepts are introduced to the reader in a simple way, often using comparisons to everyday-life experiences such as simple fluid mechanics. They are then explained in depth and mathematical developments are fully described. Physics of Semiconductor Devices contains a list of problems that can be used as homework assignments or can be solved in class to exemplify the theory. Many of these problems make use of Matlab and are aimed at illustrating theoretical concepts in a graphical manner. A series of these Matlab problems is based on a simple finite-element solution of semiconductor equations. These yield the exact solution to equations that have no analytical solutions and are usually solved using approximations, such as the depletion approximation. The exact numerical solution can then be graphically compared to the solution using the approximation. The different chapters of Physics of Semiconductor Devices cover the following material: Energy Band Theory. Theory of Electrical Conduction. Generation/Recombination Phenomena. The PN Junction Diode. Metal-semiconductor contacts. JFET and MESFET. The MOS Transistor. The Bipolar Transistor. Heterojunction Devices. Quantum-Effect Devices. Semiconductor Processing.