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Introduction to Semiconductor Devices, Kevin F. Brennan



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÷ена: 14725р.
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јвтор: Kevin F. Brennan
Ќазвание:  Introduction to Semiconductor Devices
»здательство: Cambridge Academ
 лассификаци€:
ѕроектирование электроники
ѕроектирование коммуникаций / телесв€зь

ISBN: 0521831504
ISBN-13(EAN): 9780521831505
ISBN: 0-521-83150-4
ISBN-13(EAN): 978-0-521-83150-5
ќбложка/‘ормат: Hardback
—траницы: 334
¬ес: 0.853 кг.
ƒата издани€: 03.02.2005
язык: English
»ллюстрации: 157 line figures 95 exercises
–азмер: 254 x 178 x 19
„итательска€ аудитори€: Tertiary education (us: college)
ѕодзаголовок: For computing and telecommunications applications
—сылка на »здательство: Link
–ейтинг:
ѕоставл€етс€ из: јнглии
ќписание: From semiconductor fundamentals to state-of-the-art semiconductor devices used in the telecommunications and computing industries, this book provides a solid grounding in the most important devices used in the hottest areas of electronic engineering today. The book includes coverage of future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. The book begins with a discussion of the fundamental properties of semiconductors. Next, state-of-the-art field effect devices are described, including MODFETs and MOSFETs. Short channel effects and the challenges faced by continuing miniaturization are then addressed. The rest of the book discusses the structure, behavior, and operating requirements of semiconductor devices used in lightwave and wireless telecommunications systems. This is both an excellent senior/graduate text, and a valuable reference for engineers and researchers in the field.
ƒополнительное описание: Subject: Engineering / Electronic, optoelectronic devices, and nanotechnology
Readership: electronic engineering, electrical engineering, physics
Level: undergraduate students, graduate students, professionals
Format: 247 x 174 mm 334pp 157 line diagrams 95 exercises
Chapter Titles: Preface; 1. Semiconductor fundamentals; 2. Carrier action; 3. Junctions; 4. Bipolar junction transistors; 5. JFETs and MESFETs; 6. Metal-insulator-semiconductor structures and MOSFETs; 7. Short channel effects and challenges to CMOS; 8. Beyond CMOS; 9. Telecommunications systems - an overview; 10. Optoelectronic devices - emitters, light amplifiers and detectors; 11. Transistors for high frequency, high power amplifiers for wireless systems; References; Appendix 1. Physical constants; Appendix 2. Material parameters for important semiconductors, Si and GaAs; Index.





An introduction to semiconductor devices

јвтор: Neamen
Ќазвание: An introduction to semiconductor devices
ISBN: 0071116273 ISBN-13(EAN): 9780071116275
»здательство: McGraw-Hill
–ейтинг:
÷ена: 6120 р.
Ќаличие на складе: ѕоставка под заказ.

ќписание: "An Introduction to Semiconductor Devices" by Donald Neamen provides an understanding of the characteristics, operations and limitations of semiconductor devices. In order to provide this understanding, the book brings together the fundamental physics of the semiconductor material and the semiconductor device physics. This new text provides an accessible and modern presentation of material. Quantum mechanic material is minimal, and the most advanced material is designated with an icon. Excellent pedagogy is present throughout the book in the form of interesting chapters openers, worked examples, a variety of exercises, key terms, and end of chapter problems.

Theory of Modern Electronic Semiconductor Devices

јвтор: Kevin F. Brennan
Ќазвание: Theory of Modern Electronic Semiconductor Devices
ISBN: 0471415413 ISBN-13(EAN): 9780471415411
»здательство: Wiley
–ейтинг:
÷ена: 16401 р.
Ќаличие на складе: ѕоставка под заказ.

ќписание: To help professionals keep up with the rapid pace of development in the semiconductor device industry, this text offers the most up-to-date treatment of semiconductor devices used in telecommunications, computers, and many other high-tech applications.

Defects in High-k Gate Dielectric Stacks / Nano-Electronic Semiconductor Devices

јвтор: Gusev Evgeni
Ќазвание: Defects in High-k Gate Dielectric Stacks / Nano-Electronic Semiconductor Devices
ISBN: 1402043651 ISBN-13(EAN): 9781402043659
»здательство: Springer
–ейтинг:
÷ена: 26021 р.
Ќаличие на складе: ѕоставка под заказ.

ќписание: The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.

Physics of Semiconductor Devices

јвтор: Colinge J.-P., Colinge C.A.
Ќазвание: Physics of Semiconductor Devices
ISBN: 0387285237 ISBN-13(EAN): 9780387285238
»здательство: Springer
–ейтинг:
÷ена: 13672 р.
Ќаличие на складе: ≈сть у поставщика ѕоставка под заказ.

ќписание: Physics of Semiconductor Devices covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-channel effects, low-dimensional devices and single-electron transistors. Concepts are introduced to the reader in a simple way, often using comparisons to everyday-life experiences such as simple fluid mechanics. They are then explained in depth and mathematical developments are fully described. Physics of Semiconductor Devices contains a list of problems that can be used as homework assignments or can be solved in class to exemplify the theory. Many of these problems make use of Matlab and are aimed at illustrating theoretical concepts in a graphical manner.

Nanowires and Nanobelts: Materials, Properties and Devices / Volume 1: Metal and Semiconductor Nanowires

јвтор: Wang Zhong Lin
Ќазвание: Nanowires and Nanobelts: Materials, Properties and Devices / Volume 1: Metal and Semiconductor Nanowires
ISBN: 0387287051 ISBN-13(EAN): 9780387287058
»здательство: Springer
–ейтинг:
÷ена: 13672 р.
Ќаличие на складе: ѕоставка под заказ.

ќписание: This two volume reference, Nanowires and Nanobelts: Materials, Properties and Devices, provides a comprehensive introduction to the field and reviews the current state of the research. Volume 1, Metal and Semiconductor Nanowires covers a wide range of materials systems, from noble metals (such as Au, Ag, Cu), single element semiconductors (such as Si and Ge), compound semiconductors (such as InP, CdS and GaAs as well as heterostructures), nitrides (such as GaN and Si3N4) to carbides (such as SiC). The objective of this volume is to cover the synthesis, properties and device applications of nanowires based on metal and semiconductor materials. The volume starts with a review on novel electronic and optical nanodevices, nanosensors and logic circuits that have been built using individual nanowires as building blocks. Then, the theoretical background for electrical properties and mechanical properties of nanowires is given. The molecular nanowires, their quantized conductance, and metallic nanowires synthesized by chemical technique will be introduced next. Finally, the volume covers the synthesis and properties of semiconductor and nitrides nanowires. Volume 2, Nanowires and Nanobelts of Functional Materials covers a wide range of materials systems, from functional oxides (such as ZnO, SnO2, and In2O3), structural ceramics (such as MgO, SiO2 and Al2O3), composite materials (such as Si-Ge, SiC- SiO2), to polymers. This volume focuses on the synthesis, properties and applications of nanowires and nanobelts based on functional materials. Novel devices and applications made from functional oxide nanowires and nanobelts will be presented first, showing their unique properties and applications. The majority of the text will be devoted to the synthesis and properties of nanowires and nanobelts of functional oxides. Finally, sulphide nanowires, composite nanowires and polymer nanowires will be covered.

Nanoscaled Semiconductor-on-Insulator Structures and Devices

јвтор: Hall S., Nazarov A.N., Lysenko V.S.
Ќазвание: Nanoscaled Semiconductor-on-Insulator Structures and Devices
ISBN: 1402063784 ISBN-13(EAN): 9781402063787
»здательство: Springer
–ейтинг:
÷ена: 26021 р.
Ќаличие на складе: ≈сть у поставщика ѕоставка под заказ.

ќписание: The book details many of the key issues associated with the scaling to nano-dimensions of silicon-on-insulator structures. Some papers offer new insight particularly at the device/circuit interface as appropriate for SOI which is fast becoming a mainstream technology. One of the key issues concerns mobility degradation in SOI films less than about 5nm. The advantages of combining scaled SOI devices with high permittivity (k) dielectric indicates that potential solutions are indeed available down to the 22nm node even with 5nm SOI films. A further key issue and potential вАШshow stopperвАЩ for SOI CMOS is highlighted in a number of invited and contributed papers addressing atomistic level effects. Results are presented for Monte Carlo and drift/diffusion modelling together with device compact models and circuit level simulation and this provided for a broad exposure of the problems from intrinsic physics to the circuit level. The scaling to nano-dimensions takes the technology into the realms of quantum effects and a number of papers addressed this aspect from both the technological and physics aspects. The scope of potential applications for quantum dots, quantum wires and nanotubes are considered. The use of semiconductor materials other than Si, on insulator, is featured in some sections of the book. The potential of III/V, Ge and other materials to facilitate continuation down the roadmap is illustrated by a review of the state-of-the-art.

јвтор: Neamen, Donald A.
Ќазвание: Introduction to semiconductor devices
ISBN: 0071254471 ISBN-13(EAN): 9780071254472
»здательство: McGraw-Hill
–ейтинг:
÷ена: 5427 р.
Ќаличие на складе: ѕоставка под заказ.

ќписание: Provides an understanding of the characteristics, operations and limitations of semiconductor devices. In order to provide this understanding, this book brings together the fundamental physics of the semiconductor material and the semiconductor device physics. It includes worked examples, exercises, key terms, and end of chapter problems.

Introduction to Semiconductor Devices

јвтор: Brennan
Ќазвание: Introduction to Semiconductor Devices
ISBN: 0521153611 ISBN-13(EAN): 9780521153614
»здательство: Cambridge Academ
–ейтинг:
÷ена: 6901 р.
Ќаличие на складе: ≈сть у поставщика ѕоставка под заказ.

ќписание: From semiconductor fundamentals to semiconductor devices used in the telecommunications and computing industries, this 2005 book provides a solid grounding in the most important devices used in the hottest areas of electronic engineering. The book includes coverage of future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductors. Next, the field effect devices are described, including MODFETs and MOSFETs. Short channel effects and the challenges faced by continuing miniaturisation are then addressed. The rest of the book discusses the structure, behaviour, and operating requirements of semiconductor devices used in lightwave and wireless telecommunications systems. This is both an excellent senior/graduate text, and a valuable reference for engineers and researchers in the field.

Semiconductor Physics / An Introduction

јвтор: Seeger Karlheinz
Ќазвание: Semiconductor Physics / An Introduction
ISBN: 3540219579 ISBN-13(EAN): 9783540219576
»здательство: Springer
–ейтинг:
÷ена: 10742 р.
Ќаличие на складе: ≈сть у поставщика ѕоставка под заказ.

ќписание: This well-established monograph, updated and now in its ninth edition, deals mainly with electron transport in, and optical properties of semiconductors. It includes lasers, e.g. the quantum cascade laser, quantum processes such as the quantum Hall effect, quantum dots, fullerenes, carbon nanotubes, molecular electronics, the nitrides, and many other recent discoveries in the field. New diagrams and tables provide a comprehensive source of materials data. Selected problems help readers to consolidate their knowledge and invite teachers to use this text for graduate courses on semiconductor physics, solid state  physics, and physical electronics.

Semiconductor Materials / An Introduction to Basic Principles

јвтор: Yacobi B.G.
Ќазвание: Semiconductor Materials / An Introduction to Basic Principles
ISBN: 0306473615 ISBN-13(EAN): 9780306473616
»здательство: Springer
–ейтинг:
÷ена: 16192 р.
Ќаличие на складе: ѕоставка под заказ.

ќписание: The main objective of this book is to provide an introductory perspective of the basic principles of semiconductors, being an integrated overview of the basic properties, applications, and characterization of semiconductors in a single volume. This book is suitable for both undergraduate and graduate students, and for researchers, working in a wide variety of fields in physical and engineering sciences, who require an introductory and concise description of the field of semiconductors.

Introduction to Organic Semiconductor Heterojunctions

јвтор: Yan
Ќазвание: Introduction to Organic Semiconductor Heterojunctions
ISBN: 0470825944 ISBN-13(EAN): 9780470825945
»здательство: Wiley
–ейтинг:
÷ена: 12128 р.
Ќаличие на складе: ≈сть у поставщика ѕоставка под заказ.

ќписание: It is well known that most important electronic devices use Schottky junctions and heterojunctions. Unfortunately there is not an advanced book introducing heterojunctions systematically. Introduction to Organic Semiconductor Heterojunctions fills the gap.

Complete Guide to Semiconductor Devices, 2nd Edition

јвтор: Kwok K. Ng
Ќазвание: Complete Guide to Semiconductor Devices, 2nd Edition
ISBN: 0471202401 ISBN-13(EAN): 9780471202400
»здательство: Wiley
–ейтинг:
÷ена: 19173 р.
Ќаличие на складе: ѕоставка под заказ.

ќписание: Semiconductor devices are the basic components of integrated circuits and are responsible for the startling rapid growth of the electronics industry. This book gives a collection of semiconductor devices, identifying 74 major devices and more than 200 variations of these devices. It is intended for students, researchers, lawyers, and others.


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