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Noise in Semiconductor Devices / Modeling and Simulation, Bonani Fabrizio, Ghione Giovanni



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јвтор: Bonani Fabrizio, Ghione Giovanni
Ќазвание:  Noise in Semiconductor Devices / Modeling and Simulation
»здательство: Springer
 лассификаци€:
ѕрикладна€ математика
ƒругие производственные технологии
ѕроектирование электроники
–азработка программного обеспечени€

ISBN: 3540665838
ISBN-13(EAN): 9783540665830
ISBN: 3-540-66583-8
ISBN-13(EAN): 978-3-540-66583-0
ќбложка/‘ормат: Hardback
—траницы: 213
¬ес: 0.532 кг.
ƒата издани€: 2001
—ери€: Springer Series in Advanced Microelectronics
язык: English
»ллюстрации: 22 black & white illustrations, biography
–азмер: 24.03 x 16.61 x 1.88
„итательска€ аудитори€: Professional & vocational
ѕодзаголовок: Modeling and simulation
—сылка на »здательство: Link
–ейтинг:
ѕоставл€етс€ из: √ермании
ќписание: The book deals with the numerical simulation of noise in semiconductor devices operating in linear (small-signal) and nonlinear (large-signal) conditions. The main topics of the book are: An overview of the physical basis of noise in semiconductor devices, a detailed treatment of numerical noise simulation in small-signal conditions, and a presentation of innovative developments in the noise simulation of semiconductor devices operating in large-signal quasi-periodic conditions. The main benefit that the reader will derive from the book is the ability to understand, and, if needed, replicate the development of numerical, physics-based noise simulation of semiconductor devices in small-signal and large-signal conditions.
ƒополнительное описание: ‘ормат: 235x155
»люстрации: 101
 руг читателей: Research engineers
 лючевые слова: device numerical simultation
noise in linear circuits
noise in nonlinear circuits
noise in semiconductors
semiconductor devices
язык: eng
ќглавление: Noise in semiconductor devices.- Noise analysis techniques.- Physics-based small-signal noise simulation.- Results and Case Studies.- Noise in large-signal operation.





Simulation of Semiconductor Processes and Devices 2007 / SISPAD 2007

јвтор: Grasser Tibor, Selberherr Siegfried
Ќазвание: Simulation of Semiconductor Processes and Devices 2007 / SISPAD 2007
ISBN: 3211728600 ISBN-13(EAN): 9783211728604
»здательство: Springer
–ейтинг:
÷ена: 19331 р.
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ќписание: This volume will contain the proceedings of the 12th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2007), which will take place in Vienna, Austria, on September 25-27, 2007. Like the previous meetings, SISPAD 2007 will provide a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. Topics covered will be device simulation, including transport in nano-structures models of VLSI device scaling limits, quantum effects, and novel devices process simulation, including both continuum and atomistic approaches equipment, topography, and lithography simulation interconnect modeling and algorithms including noise and parasitic effects compact device modeling for circuit simulation integration of circuit and device simulation user interfaces and visualization high performance computing, numerical methods and algorithms mesh generation and adaptation simulation of such devices as microsensor and optoelectronics devices benchmarking, calibration, and verification of simulators.

Simulation of Semiconductor Processes and Devices 2004 / SISPAD 2004

јвтор: Wachutka Gerhard, Schrag Gabriele
Ќазвание: Simulation of Semiconductor Processes and Devices 2004 / SISPAD 2004
ISBN: 3211224688 ISBN-13(EAN): 9783211224687
»здательство: Springer
–ейтинг:
÷ена: 21485 р.
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ќписание: This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004.The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world.Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.

Predictive Simulation of Semiconductor Processing / Status and Challenges

јвтор: Dabrowski Jarek, Weber Eicke R.
Ќазвание: Predictive Simulation of Semiconductor Processing / Status and Challenges
ISBN: 3540204814 ISBN-13(EAN): 9783540204817
»здательство: Springer
–ейтинг:
÷ена: 31246 р.
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ќписание: Predictive Simulation of Semiconductor Processing enables researchers and developers to extend the scaling range of semiconductor devices beyond the parameter range of empirical research. It requires a thorough understanding of the basic mechanisms employed in device fabrication, such as diffusion, ion implantation, epitaxy, defect formation and annealing, and contamination. This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool.

Nitride Semiconductor Devices: Principles and Simulation

јвтор: Piprek
Ќазвание: Nitride Semiconductor Devices: Principles and Simulation
ISBN: 3527406670 ISBN-13(EAN): 9783527406678
»здательство: Wiley
–ейтинг:
÷ена: 23100 р.
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ќписание: Since the breakthrough demonstration of GaN-based laser diodes by Shuji Nakamura one decade ago, the field of GaN-based semiconductor devices has experienced a tremendous growth worldwide. Thus far, most research focused on nitride material properties and technology. As material properties and device fabrication become more predictable, device design and simulation is gaining increasing attention. Similar developments are known from other semiconductors (Si, GaAs, InP) where computer simulation is now an important part of device design and analysis.

Simulation of Semiconductor Processes and Devices 2001 / SISPAD 01

јвтор: Tsoukalas Dimitris, Tsamis Christos
Ќазвание: Simulation of Semiconductor Processes and Devices 2001 / SISPAD 01
ISBN: 3211837086 ISBN-13(EAN): 9783211837085
»здательство: Springer
–ейтинг:
÷ена: 21485 р.
Ќаличие на складе: ≈сть у поставщика ѕоставка под заказ.

ќписание: This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5вАУ7, 2001, in Athens.

Microwave Noise in Semiconductor Devices

јвтор: Hans Ludwig Hartnagel
Ќазвание: Microwave Noise in Semiconductor Devices
ISBN: 0471384321 ISBN-13(EAN): 9780471384328
»здательство: Wiley
÷ена: 7848 р.
Ќаличие на складе: ѕоставка под заказ.

ќписание: This is a thorough reference work bridging the gap between contemporary and traditional approaches to noise problems. Noise in semiconductor devices refers to any unwanted signal or disturbance in the device that degrades performance. In semiconductor devices, noise is attributed to hot-electron effects. Current advances in information technology have led to the development of ultrafast devices that are required to provide low-noise, high-speed performance. "Microwave Noise in Semiconductor Devices" considers available data on the speed versus noise trade-off and discusses optimal solutions in semiconductors and semiconductor structures. These solutions are of direct interest in the research and development for fast, efficient, and reliable communications systems. As the only book of its kind accessible to practicing engineers, the material is divided into four parts-the kinetic theory of fluctuations and its corollaries, the methods of measurements of microwave noise, low-dimensional structures, and, finally, devices. With over 100 illustrations presenting recent experimental data for up-to-date semiconductor structures designed for ultrafast electronics, together with results of microscopic simulation where available, these examples, tables, and references offer a full comprehension of electronic processes and fluctuation in dimensionally quantizing structures. Bridging the apparent gap between the microscopic approach and the equivalent circuit approach, "Microwave Noise in Semiconductor Devices" considers microwave fluctuation phenomena and noise in terms of ultrafast kinetic processes specific to modern quantum-well structures. Scientists in materials science, semiconductor and solid-state physics, electronic engineers, and graduate students will all appreciate this indispensable review of contemporary and future microwave and high-speed electronics.

Principles of semiconductor laser diodes and amplifiers: analysis and transmission line laser modeling

Ќазвание: Principles of semiconductor laser diodes and amplifiers: analysis and transmission line laser modeling
ISBN: 1860943411 ISBN-13(EAN): 9781860943416
»здательство: World Scientific Publishing
–ейтинг:
÷ена: 11504 р.
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ќписание: Optical communications technology is growing increasingly in importance, with a rapid pace of development. Innovative optical devices have emerged from the integration of semiconductor laser diodes, amplifiers and filters with optical waveguide technology. This well-researched volume traces the evolution of semiconductor laser amplifiers (SLAs) from these technologies.

Focusing on the principle applications of SLAs, the author illustrates the growing importance of these functional components in the future of optical communications systems. This book will provide engineering and science students with a basic understanding of laser diode and optical amplification through the analysis of the performance characteristics of these devices both in theory and application. Practising device engineers wishing to consolidate their knowledge in lightwave technology will also find this book an invaluable reference.

Principles of semiconductor laser diodes and amplifiers: analysis and transmission line laser modeling

Ќазвание: Principles of semiconductor laser diodes and amplifiers: analysis and transmission line laser modeling
ISBN: 186094339X ISBN-13(EAN): 9781860943393
»здательство: World Scientific Publishing
–ейтинг:
÷ена: 13229 р.
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ќписание: This volume traces the evolution of semiconductor laser amplifiers (SLAs). Focusing on the principle applications of SLAs, the author illustrates the growing importance of these functional components in the future of optical communications systems.

Semiconductor Modeling: / For Simulating Signal, Power, and Electromagnetic Integrity

јвтор: Leventhal Roy G., Green Lynne, Carpenter D.J.
Ќазвание: Semiconductor Modeling: / For Simulating Signal, Power, and Electromagnetic Integrity
ISBN: 0387241590 ISBN-13(EAN): 9780387241593
»здательство: Springer
–ейтинг:
÷ена: 19532 р.
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ќписание: Assists engineers in designing high-speed circuits. The emphasis is on semiconductor modeling, with PCB transmission line effects, equipment enclosure effects, and other modeling issues discussed as needed. This text addresses practical considerations, including process variation, model accuracy, validation and verification, and signal integrity.

Nanoscaled Semiconductor-on-Insulator Structures and Devices

јвтор: Hall S., Nazarov A.N., Lysenko V.S.
Ќазвание: Nanoscaled Semiconductor-on-Insulator Structures and Devices
ISBN: 1402063784 ISBN-13(EAN): 9781402063787
»здательство: Springer
–ейтинг:
÷ена: 26021 р.
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ќписание: The book details many of the key issues associated with the scaling to nano-dimensions of silicon-on-insulator structures. Some papers offer new insight particularly at the device/circuit interface as appropriate for SOI which is fast becoming a mainstream technology. One of the key issues concerns mobility degradation in SOI films less than about 5nm. The advantages of combining scaled SOI devices with high permittivity (k) dielectric indicates that potential solutions are indeed available down to the 22nm node even with 5nm SOI films. A further key issue and potential вАШshow stopperвАЩ for SOI CMOS is highlighted in a number of invited and contributed papers addressing atomistic level effects. Results are presented for Monte Carlo and drift/diffusion modelling together with device compact models and circuit level simulation and this provided for a broad exposure of the problems from intrinsic physics to the circuit level. The scaling to nano-dimensions takes the technology into the realms of quantum effects and a number of papers addressed this aspect from both the technological and physics aspects. The scope of potential applications for quantum dots, quantum wires and nanotubes are considered. The use of semiconductor materials other than Si, on insulator, is featured in some sections of the book. The potential of III/V, Ge and other materials to facilitate continuation down the roadmap is illustrated by a review of the state-of-the-art.

Nanoscaled Semiconductor-on-Insulator Structures and Devices

јвтор: Hall S., Nazarov A.N., Lysenko V.S.
Ќазвание: Nanoscaled Semiconductor-on-Insulator Structures and Devices
ISBN: 1402063792 ISBN-13(EAN): 9781402063794
»здательство: Springer
–ейтинг:
÷ена: 13584 р.
Ќаличие на складе: ≈сть у поставщика ѕоставка под заказ.

ќписание: The book details many of the key issues associated with the scaling to nano-dimensions of silicon-on-insulator structures. Some papers offer new insight particularly at the device/circuit interface as appropriate for SOI which is fast becoming a mainstream technology. One of the key issues concerns mobility degradation in SOI films less than about 5nm. The advantages of combining scaled SOI devices with high permittivity (k) dielectric indicates that potential solutions are indeed available down to the 22nm node even with 5nm SOI films. A further key issue and potential вАШshow stopperвАЩ for SOI CMOS is highlighted in a number of invited and contributed papers addressing atomistic level effects. Results are presented for Monte Carlo and drift/diffusion modelling together with device compact models and circuit level simulation and this provided for a broad exposure of the problems from intrinsic physics to the circuit level. The scaling to nano-dimensions takes the technology into the realms of quantum effects and a number of papers addressed this aspect from both the technological and physics aspects. The scope of potential applications for quantum dots, quantum wires and nanotubes are considered. The use of semiconductor materials other than Si, on insulator, is featured in some sections of the book. The potential of III/V, Ge and other materials to facilitate continuation down the roadmap is illustrated by a review of the state-of-the-art.

Advanced semiconductor heterostructures: novel devices, potential device applications and basic properties

Ќазвание: Advanced semiconductor heterostructures: novel devices, potential device applications and basic properties
ISBN: 9812382895 ISBN-13(EAN): 9789812382894
»здательство: World Scientific Publishing
–ейтинг:
÷ена: 17716 р.
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ќписание: This volume provides summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, progress on advanced semiconductor heterostructures spans a truly remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern technology.

At the heart of these advances is the ability to design and control the properties of semiconductor devices on the nanoscale. As an example, the intersubband lasers discussed in this work have a broad range of previously unobtainable characteristics and associated applications as a result of the nanoscale dimensional control of the underlying semiconductor heterostructures. As this volume illustrates, an astounding variety of heterostructures can be fabricated with current technology; t e potentially widespread use of layered quantum dots fabricated with nanoscale precision in biological applications opens up exciting advances in medicine.

In addition, many more examples of the remarkable impact being made through the use of semiconductor heterostructures are given. The summaries in this text should provide timely insights into what we know about selected areas of advanced semiconductor heterostructures and also provide foundations for further developments.


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