Описание: It is now being recognized that ontological principles can be fruitfully applied to and developed further in various fields within the broader information systems area. This development has lead to ontology-driven information systems (ODIS), which is a concept that can open up new ways of thinking about ontologies and the Information Systems вЂ” both structurally and temporally.The primary objective of Ontologies: A Handbook of Principles, Concepts and Applications in Information Systems is to mobilize a collective awareness in the research community to the leading and emerging developments in ODIS, and consequently, highlight the enormous potential of ODIS research to both fundamentally transform and create innovative solutions to several problems in various domains. This book is a compilation of 32 leading-edge chapter contributions from some of the top researchers in the community working in various fundamental and applied disciplines related to ODIS. These chapters are organized into four broad themes: Foundations of ODIS, Ontological Engineering, ODIS Architectures, and ODIS Applications. These four themes together describe the state-of-the-art in ODIS and give a complete perspective on the problems, solutions and open research questions in this field. The foundations of ODIS are addressed in Chapters 1-6. The principles and techniques of ontological engineering in the context of ODIS are covered in Chapters 7-14. A collection of ODIS architectures in a variety of contexts is presented in Chapters 15-24, and lastly, a set of important and emerging ODIS applications is presented in Chapters 25-32.We expect this book to trigger innovative thought processes that will open up significant new domains in ODIS research. Numerous open research questions, challenges and opportunities can be found throughout this book and we hope this will stimulate significant research over the years.
Описание: A geometric process is a simple monotone process that was first introduced by the author in 1988. It is a generalization of renewal process. This book captures
the extensive research work on geometric processes that has been done since then in both probability and statistics theory and various applications.
Some results are
published for the first time. A reference book for researchers and a handbook for practioners, it is also a useful textbook for postgraduate or senior undergraduate students.
Описание: Clifford algebra, then called geometric algebra, was introduced more than a cenetury ago by William K. Clifford, building on work by Grassmann and Hamilton. Clifford or geometric algebra shows strong unifying aspects and turned out in the 1960s to be a most adequate formalism for describing different geometry-related algebraic systems as specializations of one "mother algebra" in various subfields of physics and engineering. Recent work outlines that Clifford algebra provides a universal and powerfull algebraic framework for an elegant and coherent representation of various problems occuring in computer science, signal processing, neural computing, image processing, pattern recognition, computer vision, and robotics. This monograph-like anthology introduces the concepts and framework of Clifford algebra and provides computer scientists, engineers, physicists, and mathematicians with a rich source of examples of how to work with this formalism.
Описание: Many computer scientists, engineers, applied mathematicians, and physicists use geometry theory and geometric computing methods in the design of perception-action systems, intelligent autonomous systems, and man-machine interfaces. This handbook brings together the most recent advances in the application of geometric computing for building such systems, with contributions from leading experts in the important fields of neuroscience, neural networks, image processing, pattern recognition, computer vision, uncertainty in geometric computations, conformal computational geometry, computer graphics and visualization, medical imagery, geometry and robotics, and reaching and motion planning. For the first time, the various methods are presented in a comprehensive, unified manner.This handbook is highly recommended for postgraduate students and researchers working on applications such as automated learning; geometric and fuzzy reasoning; human-like artificial vision; tele-operation; space maneuvering; haptics; rescue robots; man-machine interfaces; tele-immersion; computer- and robotics-aided neurosurgery or orthopedics; the assembly and design of humanoids; and systems for metalevel reasoning.
Описание: This book contains an edited collection of eighteen contributions on soft and hard computing techniques and their applications to autonomous robotic systems. Each contribution has been exclusively written for this volume by a leading researcher. The volume demonstrates the various ways that the soft computing and hard computing techniques can be used in different integrated manners to better develop autonomous robotic systems that can perform various tasks of vision, perception, cognition, thinking, pattern recognition, decision-making, and reasoning and control, amongst others. Each chapter of the book is self-contained and points out the future direction of research. "It is a must reading for students and researchers interested in exploring the potentials of the fascinating field that will form the basis for the design of the intelligent machines of the future" (Madan M. Gupta)
Описание: Preface. Section I: Physics and Technology. Physics and Technology of Semiconductor Nanostructures; H. LГјth. Molecular Beam Epitaxy: Physics and Technology; M. Henini. 6H-SiC(001)/AlN/GaN Epitaxial Heterojunctions and Their Valence Band Offset; A. Rizzi. Optical Properties of Antimonide Based Heterostructures Grown by All-Organometallic Vapour Phase Epitaxy; T. Tuomi. MOVPE Technology for Multiwafer Production: Ga-Al-In-N Heterostructures and Optical and Electrical Properties of Deposited Layers; M. Deschler, et al. Molecular Beam Epitaxy of Narrow-Gap III-V Antimonides for Infrared Detectors and Sources; G. Borghs, et al. The Stability of the Misfit Dislocation Array at the Substrate-Epitaxial Layer Interface; E. Dobrocka, et al. Surface Reconstruction Processes in the Scope of the BCF Theory of Crystal Growth; D. Nohavica. Influence of Si Doping on Epitaxial Lateral Overgrowth of GaAs; Z.R. Zytkiewicz, D. Dobosz. Temperature Dependent Quasiplateaux of Hall Effect in Multi-delta-Layers; J.J. Mares, et al. Self-Consistent Analysis of Electronic Structure of Coupled delta-Doped Layers in GaAs; J. Osvald, E. Burian. Semiquantal Dynamics of Electrons in Quantum Heterostructures; L.V. Yurchenko, V.B. Yurchenko. Phase-Shift Analysis of Two-Dimensional Carrier-Carrier Scattering; A. MoskovГЎ, M. Mosko. Carrier-Impurity Collisions in a Narrow Quantum Wire: Born Approximation Versus Exact Solution; P. VГЎgner, M. Mosko. Low Temperature Hydride Vapor Phase Epitaxy of GaN Layers on Different Substrates; R. Fornari, et al. Study of Gallium Nitride Films Grown by MOCVD; R. Paszkiewicz, et al. A Comparison of Galvanomagnetic Properties of GaN Epitaxial Layers Grown on Silicon and Sapphire Substrates; K. Somogyi, Yu.V. Zhilyaev. The Effect of the Substrate Thermal Stresses on the Misfit Dislocation Generation; E. Dobročka. Experimental Study of the Thermal Decomposition of Heteroepitaxial and Bulk InP; F. Riesz, et al. Antiphase Boundaries in the Ordered InGaP Epitaxial Layers Prepared by MOCVD; M. Harvanka, et al. Critical Thickness Investigation of InxGa1-xAs/GaAs by X-Ray Measurements; M. Tlaczala, et al. MOVPE Growth of InGaP/GaAs Interfaces; R. Kúdela, et al. GaAs and InP on Si with InGaP Buffer Layers; H.-H. Wehmann, et al. Crystal Structure and Photoluminescence of In1-xGaxAs Heteroepitaxial Layers Grown on InP Substrates; V.A. Bykovsky, et al. Investigation of InxGa1-xAs/GaAs Heterostructures by Electrochemical Method; A. Nemcsics, L. Dobos. Technological and Physical Aspects of the Improvement of Uniformity of Pure and Lightly Doped GaAs Epitaxial Layers; V.A. Bykovsky, et al. Characterization of InP Layers Prepared by LPE Using Ytterbium and Erbium Admixture; O. Procházková, et al. Characterization of InP:Zn Layers by Photoluminescence and Photo-Electrochemical C-V Profiling; V.F. Andrievski, et al. Spectroscopic Ellipsometry: Application to Complex Optoelectronic Layer Systems; B. Rheinlánder, et al. Section II: Heterostructures and Devices. InGaP/GaAs Carbon-Doped Heterostructures for Heterojunction Bipolar Transistors; Q.J. Hartmann, et al. InxGa1-xP Quantum Wire Structures Grown by MOVPE Technique; J. Novák. Low-Temperature Grown Molecular-Beam Epitaxial GaAs for Terahertz Photomixing; P. Kordoš. InP-HEMT-Based Digital Circuit Technology; I. Adesida, A. Mahajan. Layers and Heterostructures for High Temperature Devices; E. Kohn. Growth and Characterization of InGaAs Quantum-Wires; H.-H. Wehmann, et al. Preparation of Stair-Step Grooves by Wet Etching of AlAs/GaAs Heterostructures & MOCVD Growth of QWR; S. Kičin, et al. InAs Quantum Dots in GaAs: Technology and Luminescence Properties; E. Hulicius, et al. Quantum Confined Stark Effect in Microcavity in AlGaAs/GaAs MQW Structures Studied by Optical Polarization Spectroscopy; J. Borgulová, et al. Josephson-effect in Superconductor/Two-Dimensional Electron Gas Structures; Th. Schäpers, et al. Dynamics of the Electroabsorption in Low Temperature Grown GaAs; S.U. Dankowski, et al. Analysis of Heterostructure Lase-Diode Amplifier; F. Šrobár. Design, Growth and Characterisation of RCE PIN Photodiode Operating at 1300 nm Wavelength Range; J. Kováč, et al. UV Detectors Based on InGaP; R. Küdela, et al. Polarization Anisotropy in Electroabsorption and Electroluminescence of Ordered GaInP and Their Device Applications; P. Kiesel, et al. Fast-Response Photodetectors on InP-InGaAsP Heterostructures; N.M. Zakroeva, A.A. Tepteev. InGaAs on GaAs Structures for Photodetector Applications; B. Boratynski, et al. Low Back Reflection Receptacled P-I-N Photodiodes; V.F. Andrievski. Optical Gain Improvement of GaAs Lateral Photoresistive Elements by Sulphur Passivation of the Surface; J. Mimila-Arroyo, K. Somogyi. Preparation and Properties of Edge QW Delta Doped InGaAs/GaAs FET; M. Bujdák, et al. AlInAs/InP Heterostructures for FET Application Grown at Low Temperatures; B. Henle, E. Kohn. Irradiation Induced Traps in HEMT's AlGaAs Donor Layer; N. Arpatzanis, et al. Electrical and Detection Characteristics of Improved Particle Detectors Based on Semi-Insulating InP; F. Dubecký, et al. Preparation of Microscopic Hall Probes and Arrays; P. Eliáš, et al. Testing Superconducting Tapes by a 2DEG Hall Probe Array; M. Ďurica, et al. Simulation and Characterisation of Thermal Properties of GaAs Micromachined Power Sensor Microsystems; E. Burian, et al. On Quantum Hall Resistance and Shubnikov De Haas Effect Measurements on InP/InGaAs Structures; M. Morvic, et al. On the Boundary Conditions for Electron Transport Across an Abrupt Np-Heterojunction; M. Horák. Ti/Pt/Au and WSiN/Ti/Pt/Au Schottky Contacts to n-Type InGAP Epitaxial Layers; V. Malina, et al. Radiation Damage Free Low-Voltage E-Beam Lithography for AIIIВЈ/YYВЈV Device Manufacturing; V.A. Kudryashov. Determination of Structure Characteristics of Heteroepitaxially Grown Thin Films Through X-Ray Diffraction Line Profile Analysis; P. Šutta. Several Ways of Excitation and Degradation Processes of Porous Silicon Photoluminescence; N.E. Korsunskaya, et al. Subject Index. List of Participants.
Описание: Over the past several years, cooperative control and optimization have increasingly played a larger and more important role in many aspects of military
sciences, biology, communications, robotics, and decision making. At the same time, cooperative systems are notoriously difficult to model, analyze, and solve - while intuitively
understood, they are not axiomatically defined in any commonly accepted manner. The works in this volume provide outstanding insights into this very complex area of
e the result of invited papers and selected presentations at the Fourth Annual Conference on Cooperative Control and Optimization held in Destin, Florida, November 2003.
Описание: Generalizes and develops the generating function and Hamilton-Jacobi equation theory from the perspective of the symplectic geometry and symplectic algebra. This title is suitable for engineers and scientists in the fields of quantum theory, astrophysics, atomic and molecular dynamics, climate prediction, and oil exploration.
Описание: This book presents biologically inspired walking machines interacting with their physical environment. It describes how the designs of the morphology and the behavior control of walking machines can benefit from biological studies. The purpose of this book is to develop a modular structure of neural control generating different reactive behaviors of the physical walking machines, to analyze the neural mechanisms underlying the reactive behaviors, and to demonstrate the sensor fusion technique leading to smooth switching between appropriate behaviors, like obstacle avoidance and sound tropism. The author offers an example of artificial perception-action systems and emphasizes the close relationship between biological studies, computational neuroscience and engineering. The book will be of interest to researchers, engineers and students in the fields of robotics, biologically inspired mechatronics, electronics engineering, control, and artificial intelligence.
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