Zhang Xiaoge Gregory Electrochemistry of Silicon and its Oxide 9780306465413

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Автор: Zhang Xiaoge Gregory
Название: Electrochemistry of Silicon and its Oxide
Перевод названия: Электрохимия силикона и его оксиды
ISBN: 9780306465413
Издательство: Springer
Классификация:

Физика конденсированных сред (физика веществ в жидком и твёрдом состоянии)

Аналитическая химия

Неорганическая химия

Физическая химия

Электрохимия и магнитохимия

Промышленная химия

Материаловедение

Электроника

ISBN-10: 0306465418
Обложка/Формат: Hardback
Страницы: 522
Вес: 0.95 кг.
Дата издания: 2001
Язык: English
Иллюстрации: Illustrations
Размер: 243 x 166 x 35
Читательская аудитория: Postgraduate, research & scholarly
Ссылка на Издательство: Link
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Поставляется из: Германии
Описание: The importance of electrochemistry in silicon technology has spurred intense research activity in the last five decades, resulting in a tremendous amount of experimental data and theoretical formulations. This book is a compilation and digestion of this body of information with a comprehensive collection of concrete data on the electrochemical properties of silicon, thorough characterization and analysis of the diverse phenomena of silicon electrodes, and systematic integration of concepts and theories on the reaction mechanisms. Covering all the scientific aspects and engineering applications involved in the silicon/liquid interface, this large body of information will be highly valuable for the current and future progress of the silicon science and technology.
Дополнительное описание: Язык: eng
Оглавление: 1: Basic Theories of Semiconductor Electrochemistry. 1.1. Introduction. 1.2. Energetics of Semiconductor/Electrolyte Interface. 1.3. Potential and Charge Distribution in Space Charge Layer. 1.4. Kinetics of Charge Transfer. 1.5. Photoeffects. 1.6. Open-Circuit Potential. 1.7. Experimental Techniques. 2: Silicon/Electrolyte Interface. 2.1. Basic Properties of Silicon. 2.2. Thermodynamic Stability in Aqueous Solutions. 2.3. Surface Adsorption. 2.4. Native Oxide. 2.5. Hydrophobic and Hydrophilic Surfaces. 2.6. Surface States. 2.7. Flatband Potentials. 2.8. Open-Circuit Potentials. 3: Anodic Oxide. 3.1. Introduction. 3.2. Types of Oxides. 3.3. Formation of Anodic Oxides. 3.4. Growth Mechanisms. 3.5. Properties. 4: Etching of Oxides. 4.1. Introduction. 4.2. General. 4.3. Thermal Oxide. 4.4. Quartz and Fused Silica. 4.5. Deposited Oxides. 4.6. Anodic Oxides. 4.7. Etching Mechanisms. 5: Anodic Behavior. 5.1. Introduction. 5.2. Current-Potential Relationship. 5.3. Photoeffect. 5.4. Effective Dissolution Valence. 5.5. Hydrogen Evolution. 5.6. Limiting Current. 5.7. Impedance of Interface Layers. 5.8. Tafel Slope and Distribution of Potential. 5.9. Passivation. 5.10. Current Oscillation. 5.11. Participation of Bands and Rate-Limiting Processes. 5.12. Reaction Mechanisms. 6: Cathodic Behavior and Redox Couples. 6.1. Introduction. 6.2. Hydrogen Evolution. 6.3. Metal Deposition. 6.4. Deposition of Silicon. 6.5. Redox Couples. 6.6. Open-Circuit Photovoltage. 6.7. Surface Modification. 7: Etching of Silicon. 7.1. Introduction. 7.2. General. 7.3. Fluoride Solutions. 7.4. Alkaline Solutions. 7.5. Etch Rate Reduction of Heavily Doped Materials. 7.6. Anisotropic Etching. 7.7. Surface Roughness. 7.8. Applications. 8: Porous Silicon. 8.1. Introduction. 8.2. Formation of Porous Silicon. 8.3. Morphology. 8.4. PS Formed at OCP. 8.5. PS Formed under Special Conditions. 8.6. Formation Mechanisms. 8.7. Properties and Applications. 9: Summaries and General Remarks. 9.1. Complexity. 9.2. Surface Condition. 9.3. Oxide Film. 9.4. Sensitivity to Curvature. 9.5. Sensitivity to Lattice Structure. 9.6. Relativity. 9.7. Future Research Interests.

Electrochemistry of Silicon and its Oxide, Zhang Xiaoge Gregory