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Transistor Circuits for Spacecraft Power System, Wu Keng C.



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Цена: 17578р.
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Автор: Wu Keng C.
Название:  Transistor Circuits for Spacecraft Power System
Издательство: Springer
Классификация:
Проектирование электроники
Схемы и компоненты
Робототехника
Автомобильная технология
Космическая наука
Астронавтика

ISBN: 1402072619
ISBN-13(EAN): 9781402072611
ISBN: 1-402-07261-9
ISBN-13(EAN): 978-1-402-07261-1
Обложка/Формат: Hardback
Страницы: 232
Вес: 0.509 кг.
Дата издания: 01.11.2002
Язык: English
Иллюстрации: Bibliographical references, index
Размер: 24.18 x 16.10 x 1.75
Читательская аудитория: Postgraduate, research & scholarly
Ссылка на Издательство: Link
Рейтинг:
Поставляется из: Германии
Описание: As a stand-alone volume, Transistor Circuits For Spacecraft Power System presents numerous transistor circuits and building blocks associated with power electronics in general, and examines the major subsystem components for solar-based spacecraft power systems. The technique and concept, of continuity of states for nonlinear circuits handling power transfer under cyclic excitation is introduced in Part I and further developed throughout the book. This powerful technique employing matrix formulation bypasses eigen-transients and yields steady-state responses rapidly. Closed-loop treatments are also given for large-scale linear circuits, many closed-form solutions for control loop-gain, conducted susceptibility, output impedance, etc. are covered. Extensive mathematical procedures are retained to highlight the importance of analytical flows.The author also reviews the evolution of solar-based spacecraft power systems; introduces modes of operations: discharge (boost), shunt, and charge; and covers pulse-width-modulated (PWM) boost power converter for both DC and AC conditions. A configuration tree for shunt mode operation is conceived. Based on the configuration tree, the best topologies, sequential PWM shunt and ripple-regulated free-running shunt, are intensively examined and formulated.Transistor Circuits For Spacecraft Power System provides important information for understanding the relationship between earthbound semiconductor circuits and space borne vehicles.
Дополнительное описание: Круг читателей: Researchers, scientists in aerospace engineering, electronic and computer engineering
Язык: eng





Fundamentals of rf and microwave transistor amplifiers

Автор: Bahl, Inder
Название: Fundamentals of rf and microwave transistor amplifiers
ISBN: 0470391669 ISBN-13(EAN): 9780470391662
Издательство: Wiley
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Цена: 17441 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage.

Nonlinear Transistor Model Parameter Extraction Techniques

Автор: Rudolph
Название: Nonlinear Transistor Model Parameter Extraction Techniques
ISBN: 0521762103 ISBN-13(EAN): 9780521762106
Издательство: Cambridge Academ
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Цена: 11503 р.
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Описание: Achieve accurate and reliable parameter extraction using a broad range of techniques and models provided.

Organic Thin-Film Transistor Applic

Автор: Kaushik
Название: Organic Thin-Film Transistor Applic
ISBN: 149873653X ISBN-13(EAN): 9781498736534
Издательство: Taylor&Francis
Рейтинг:
Цена: 12705 р.
Наличие на складе: Поставка под заказ.

Описание: Text provides information about advanced OTFT (Organic thin film transistor) structures, their modeling and extraction of performance parameters, materials of individual layers, their molecular structures, basics of pi-conjugated semiconducting materials and their properties, OTFT charge transport phenomena and fabrication techniques. It includes applications of OTFTs such as single and dual gate OTFT based inverter circuits along with bootstrap techniques, SRAM cell designs based on different material and circuit configurations, light emitting diodes (LEDs). Besides this, application of dual gate OTFT in the logic gate, shift register, Flip-Flop, counter circuits will be included as well.

Valve and Transistor Audio Amplifiers,

Автор: John Linsley Hood
Название: Valve and Transistor Audio Amplifiers,
ISBN: 0750633565 ISBN-13(EAN): 9780750633567
Издательство: Elsevier Science
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Цена: 6996 р.
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Описание: The audio amplifier is at the heart of audio design. Its performance determines largely the performance of any audio system. This work describes the milestones that have marked the development of audio amplifiers since the earliest days to the modern systems.

Planar double-gate transistor

Название: Planar double-gate transistor
ISBN: 1402093276 ISBN-13(EAN): 9781402093272
Издательство: Springer
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Цена: 16196 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Deals with the topic of Double-Gates devices and circuit. This book aims to reinforce the synergy between the research activities on CMOS sub-32nm devices and the design of elementary cells. It shows how we can take advantage of transistor structures to come up with basic cells and concepts that exploit the electrical features of these devices.

Ferroelectric-Gate Field Effect Transistor Memories

Автор: Park
Название: Ferroelectric-Gate Field Effect Transistor Memories
ISBN: 9402408398 ISBN-13(EAN): 9789402408393
Издательство: Springer
Рейтинг:
Цена: 16719 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time.This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Transistor Level Modeling for Analog/RF IC Design

Автор: Grabinski
Название: Transistor Level Modeling for Analog/RF IC Design
ISBN: 1402045557 ISBN-13(EAN): 9781402045554
Издательство: Springer
Рейтинг:
Цена: 13672 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The first chapter lays out the 2/3D process and device simulations as an effective tool for a better understanding of the internal behavior of semiconductor structures and this with a focus on high-voltage MOSFET devices. Subsequently, the mainstream developments of both the PSP and the EKV models are discussed in detail.

These physics-based MOSFET models are compared to the measurement-based models which are frequently used in RF applications. The comparison includes an overview of the relevant empirical models and measurement techniques. The following chapters include SOI-specific aspects, modeling enhancement of small geometry MOSFET devices and a survey of quantum effects in devices and circuits.

Finally, an explanation of hardware description languages such as VHDL-AMS and Verilog-A is offered and shows the possibilities of the practical implementation and standardization of the different modeling methodologies found in the preceding chapters. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization.

The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.

RF and Microwave Transistor Oscillator Design

Автор: Grebennikov
Название: RF and Microwave Transistor Oscillator Design
ISBN: 0470025352 ISBN-13(EAN): 9780470025352
Издательство: Wiley
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Цена: 13687 р.
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Описание: This book begins with an analysis of non-linear circuit design methods including spectral-domain analysis, time-domain analysis and the quasilinear method.  It then moves on to discuss the operation and design principles of oscillators, including a section on the historical aspects of oscillator configurations.  The stability of oscillators is next examined with discussions on the stability of multi-resonant circuits, the phase plane method and start-up and stability.  Following this, the optimum design and circuit techniques are addressed, beginning with the empirical and analytic optimum design approaches, and moving on to the high-efficiency design technique. The next few chapters examine noise in oscillators including chapters on varactor and oscillator frequency tuning, CMOS voltage-controlled oscillators and wideband voltage-controlled oscillators.  The book concludes with a chapter evaluating noise reduction techniques such as resonant circuit design technique, filtering technique and noise-shifting technique.

Insulated Gate Bipolar Transistor IGBT Theory and Design

Автор: Vinod Kumar Khanna
Название: Insulated Gate Bipolar Transistor IGBT Theory and Design
ISBN: 0471238457 ISBN-13(EAN): 9780471238454
Издательство: Wiley
Рейтинг:
Цена: 18018 р.
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Описание: A comprehensive and "state-of-the-art" coverage of the design and fabricatiof IGBT.
* All-in-one resource
* Explains the fundamentals of MOS and bipolar physics.
* Covers IGBT operation, device and process design, power modules, and new IGBT structures.

Fundamental spacecraft dynamics and control

Автор: Hu, Weiduo,
Название: Fundamental spacecraft dynamics and control
ISBN: 1118753534 ISBN-13(EAN): 9781118753538
Издательство: Wiley
Рейтинг:
Цена: 10973 р.
Наличие на складе: Поставка под заказ.

Описание: An extensive text reference includes around an asteroid - a new and important topic - Covers the most updated contents in spacecraft dynamics and control, both in theory and application- Introduces the application to motion around asteroids - a new and important topic- Written by a very experienced researcher in this area

Space Invaders / How Robotic Spacecraft Explore the Solar System

Автор: Pelt Michel van
Название: Space Invaders / How Robotic Spacecraft Explore the Solar System
ISBN: 0387332324 ISBN-13(EAN): 9780387332321
Издательство: Springer
Рейтинг:
Цена: 3656 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Focusing on future modern spacecraft, Michel van Pelt explains the exciting life of unmanned space explorers, making the technology, design, development, operation and results of modern space probe missions understandable by lay readers.

Spacecraft Power Systems

Автор: Patel
Название: Spacecraft Power Systems
ISBN: 0849327865 ISBN-13(EAN): 9780849327865
Издательство: Taylor&Francis
Рейтинг:
Цена: 28582 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Presents information on the various aspects of spacecraft power system design, analysis, and operation for various types of spacecrafts: earth-orbiting, interplanetary, and deep-space. This work presents modern data and procedures for designing electrical power systems that meet mission requirements at a minimum cost and weight.


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