Описание: A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage.
Описание: Achieve accurate and reliable parameter extraction using a broad range of techniques and models provided.
Автор: Kaushik Название: Organic Thin-Film Transistor Applic ISBN: 149873653X ISBN-13(EAN): 9781498736534 Издательство: Taylor&Francis Рейтинг: Цена: 12705 р. Наличие на складе: Поставка под заказ.
Описание: Text provides information about advanced OTFT (Organic thin film transistor) structures, their modeling and extraction of performance parameters, materials of individual layers, their molecular structures, basics of pi-conjugated semiconducting materials and their properties, OTFT charge transport phenomena and fabrication techniques. It includes applications of OTFTs such as single and dual gate OTFT based inverter circuits along with bootstrap techniques, SRAM cell designs based on different material and circuit configurations, light emitting diodes (LEDs). Besides this, application of dual gate OTFT in the logic gate, shift register, Flip-Flop, counter circuits will be included as well.
Автор: John Linsley Hood Название: Valve and Transistor Audio Amplifiers, ISBN: 0750633565 ISBN-13(EAN): 9780750633567 Издательство: Elsevier Science Рейтинг: Цена: 6996 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The audio amplifier is at the heart of audio design. Its performance determines largely the performance of any audio system. This work describes the milestones that have marked the development of audio amplifiers since the earliest days to the modern systems.
Название: Planar double-gate transistor ISBN: 1402093276 ISBN-13(EAN): 9781402093272 Издательство: Springer Рейтинг: Цена: 16196 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Deals with the topic of Double-Gates devices and circuit. This book aims to reinforce the synergy between the research activities on CMOS sub-32nm devices and the design of elementary cells. It shows how we can take advantage of transistor structures to come up with basic cells and concepts that exploit the electrical features of these devices.
Описание: This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time.This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
Описание: The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The first chapter lays out
the 2/3D process and device simulations as an effective tool for a better understanding of the internal behavior of semiconductor structures and this with a focus on high-voltage
MOSFET devices. Subsequently, the mainstream developments of both the PSP and the EKV models are discussed in detail.
These physics-based MOSFET models are
compared to the measurement-based models which are frequently used in RF applications. The comparison includes an overview of the relevant empirical models and measurement
techniques. The following chapters include SOI-specific aspects, modeling enhancement of small geometry MOSFET devices and a survey of quantum effects in devices and
Finally, an explanation of hardware description languages such as VHDL-AMS and Verilog-A is offered and shows the possibilities of the practical implementation and standardization of
the different modeling methodologies found in the preceding chapters. The variety of subjects and the high quality of content of this volume make it a reference document for
researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling,
parameter extraction, space-level simulation or model standardization.
The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as
well as to modeling designers working in the analog and high-frequency areas.
Описание: This book begins with an analysis of non-linear circuit design methods including spectral-domain analysis, time-domain analysis and the quasilinear method. It then moves on to discuss the operation and design principles of oscillators, including a section on the historical aspects of oscillator configurations. The stability of oscillators is next examined with discussions on the stability of multi-resonant circuits, the phase plane method and start-up and stability. Following this, the optimum design and circuit techniques are addressed, beginning with the empirical and analytic optimum design approaches, and moving on to the high-efficiency design technique. The next few chapters examine noise in oscillators including chapters on varactor and oscillator frequency tuning, CMOS voltage-controlled oscillators and wideband voltage-controlled oscillators. The book concludes with a chapter evaluating noise reduction techniques such as resonant circuit design technique, filtering technique and noise-shifting technique.
Описание: A comprehensive and "state-of-the-art" coverage of the design and fabricatiof IGBT. * All-in-one resource * Explains the fundamentals of MOS and bipolar physics. * Covers IGBT operation, device and process design, power modules, and new IGBT structures.
Описание: An extensive text reference includes around an asteroid - a new and important topic - Covers the most updated contents in spacecraft dynamics and control, both in theory and application- Introduces the application to motion around asteroids - a new and important topic- Written by a very experienced researcher in this area
Описание: Focusing on future modern spacecraft, Michel van Pelt explains the exciting life of unmanned space explorers, making the technology, design, development, operation and results of modern space probe missions understandable by lay readers.
Автор: Patel Название: Spacecraft Power Systems ISBN: 0849327865 ISBN-13(EAN): 9780849327865 Издательство: Taylor&Francis Рейтинг: Цена: 28582 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Presents information on the various aspects of spacecraft power system design, analysis, and operation for various types of spacecrafts: earth-orbiting, interplanetary, and deep-space. This work presents modern data and procedures for designing electrical power systems that meet mission requirements at a minimum cost and weight.
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