Автор: Neamen Donald A Название: Semiconductor Physics and Devices, 4 ed. ISBN: 0071089020 ISBN-13(EAN): 9780071089029 Издательство: McGraw-Hill Рейтинг: Цена: 7044 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Offering an examination of the physics of semiconductor material, this title provides a basis for understanding the characteristics, operation, and limitations of semiconductor devices. It brings together quantum mechanics, the quantum theory of solids, semiconductor material physics, and semiconductor device physics in an understandable way.
Автор: Neamen Donald A Название: Semiconductor Physics And Devices ISBN: 0073529583 ISBN-13(EAN): 9780073529585 Издательство: McGraw-Hill Рейтинг: Цена: 37541 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: With its strong pedagogy, superior readability, and thorough examination of the physics of semiconductor material, Semiconductor Physics and Devices, 4/e provides a basis for understanding the characteristics, operation, and limitations of semiconductor devices.
Автор: Neamen, Donald A. Название: Semiconductor physics and devices ISBN: 0071317082 ISBN-13(EAN): 9780071317085 Издательство: McGraw-Hill Цена: 5427 р. Наличие на складе: Поставка под заказ.
Описание: Provides a basis for understanding the characteristics, operation, and limitations of semiconductor devices. This title deals with the electrical properties and characteristics of semiconductor materials and devices. It intends to bring together quantum mechanics, the quantum theory of solids, and semiconductor material physics.
Автор: Islam, S.S. Название: SEMICONDUCTOR PHYSICS AND DEVICES ISBN: 0195677293 ISBN-13(EAN): 9780195677294 Издательство: Oxford Academ Рейтинг: Цена: 4140 р. Наличие на складе: Поставка под заказ.
Описание: Semiconductor Physics and Devices provides an introduction to the physics of semiconductor materials and devices. The text is supported by a large number of examples and exercises to test the understanding of topics.
Автор: Neamen Название: Semiconductor Physics And Devices ISBN: 0071198628 ISBN-13(EAN): 9780071198622 Издательство: McGraw-Hill Цена: 3325 р. Наличие на складе: Поставка под заказ.
Описание: "Neamen's Semiconductor Physics and Devices, Third Edition" deals with the electrical properties and characteristics of semiconductor materials and devices.
The goal of this book is to bring together quantum mechanics, the quantum theory of solids, semiconductor material physics, and semiconductor device physics in a clear and
Описание: The book deals with the numerical simulation of noise in semiconductor devices operating in linear (small-signal) and nonlinear (large-signal) conditions. The main topics of the book are: An overview of the physical basis of noise in semiconductor devices, a detailed treatment of numerical noise simulation in small-signal conditions, and a presentation of innovative developments in the noise simulation of semiconductor devices operating in large-signal quasi-periodic conditions. The main benefit that the reader will derive from the book is the ability to understand, and, if needed, replicate the development of numerical, physics-based noise simulation of semiconductor devices in small-signal and large-signal conditions.
Описание: Starting from basic principles, the autor, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications.
Описание: In the modern semiconductor industry, there is a growing need to understand and combat potential radiation damage problems. Space applications are an obvious case, but, beyond that, today's device and circuit fabrication rely on increasing numbers of processing steps that involve an aggressive environment where inadvertant radiation damage can occur. This book is both aimed at post-graduate researchers seeking an overview of the field, and will also be immensely useful for nuclear and space engineers and even process engineers. A background knowledge of semiconductor and device physics is assumed, but the basic concepts are all briefly summarized. Finally the book outlines the shortcomings of present experimental and modeling techniques and gives an outlook on future developments.
Описание: This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004.The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world.Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.
Описание: This two volume reference, Nanowires and Nanobelts: Materials, Properties and Devices, provides a comprehensive introduction to the field and reviews the current state of the research. Volume 1, Metal and Semiconductor Nanowires covers a wide range of materials systems, from noble metals (such as Au, Ag, Cu), single element semiconductors (such as Si and Ge), compound semiconductors (such as InP, CdS and GaAs as well as heterostructures), nitrides (such as GaN and Si3N4) to carbides (such as SiC). The objective of this volume is to cover the synthesis, properties and device applications of nanowires based on metal and semiconductor materials. The volume starts with a review on novel electronic and optical nanodevices, nanosensors and logic circuits that have been built using individual nanowires as building blocks. Then, the theoretical background for electrical properties and mechanical properties of nanowires is given. The molecular nanowires, their quantized conductance, and metallic nanowires synthesized by chemical technique will be introduced next. Finally, the volume covers the synthesis and properties of semiconductor and nitrides nanowires. Volume 2, Nanowires and Nanobelts of Functional Materials covers a wide range of materials systems, from functional oxides (such as ZnO, SnO2, and In2O3), structural ceramics (such as MgO, SiO2 and Al2O3), composite materials (such as Si-Ge, SiC- SiO2), to polymers. This volume focuses on the synthesis, properties and applications of nanowires and nanobelts based on functional materials. Novel devices and applications made from functional oxide nanowires and nanobelts will be presented first, showing their unique properties and applications. The majority of the text will be devoted to the synthesis and properties of nanowires and nanobelts of functional oxides. Finally, sulphide nanowires, composite nanowires and polymer nanowires will be covered.
Описание: The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.
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