Описание: This book provides a comprehensive discussion of magnetism, magnetic materials and related applications. It covers the physics of magnetism, magnetic phenomena in materials, size and dimensionality effects and applications including information storage, spin electronics, and biomedicine.
Описание: With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those mate
Описание: Semiconductor technologies are moving at such a fast pace that new materials are needed in all types of application. This work covers the science, properties and applications of dielectrics, their preparation, patterning, reliability and characterisation. It brings together the science and technology of interlayer dielectrics materials.
Описание: This thesis investigates the dielectric properties of metal-oxide ceramics at microwave frequencies. It also demonstrates for the first time that a theory of harmonic phonon coupling can effectively predict the complex permittivity of metal oxides as a function of temperature and frequency. Dielectric ceramics are an important class of materials for radio-frequency, microwave and emergent terahertz technologies. Their key property is complex permittivity, the real part of which permits the miniaturisation of devices and the imaginary part of which is responsible for the absorption of electromagnetic energy. Absorption limits the practical performance of many microwave devices such as filters, oscillators, passive circuits and antennas. Complex permittivity as a function of temperature for low-loss dielectrics is determined by measuring the resonant frequency of dielectric resonators and using the radial mode matching technique to extract the dielectric properties.There have been only a handful of publications on the theory of dielectric loss, and their predictions have often been unfortunately unsatisfactory when compared to measurements of real crystals, sometimes differing by whole orders of magnitude. The main reason for this is the lack of accurate data for a harmonic coupling coefficient and phonon eigenfrequencies at arbitrary q vectors in the Brillouin zone. Here, a quantum field theory of losses in dielectrics is applied, using results from density functional perturbation theory, to predict from first principles the complex permittivity of metal oxides as functions of frequency and temperature.
Автор: Christophorou Название: Gaseous Dielectrics VIII ISBN: 0306460564 ISBN-13(EAN): 9780306460562 Издательство: Springer Рейтинг: Цена: 21845 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This text covers the latest advances and developments in a wide range of basic, applied, and industrial areas of gaseous dielectrics.
Автор: Christophorou Loucas G., Olthoff James K. Название: Gaseous Dielectrics IX ISBN: 0306467054 ISBN-13(EAN): 9780306467059 Издательство: Springer Рейтинг: Цена: 21504 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The volume deals with contributions to the basic physics of gaseous dielectric materials and the understanding of basic gas discharge mechanisms and plasmas. It also looks at advances in gas-insulated equipment and issues of recycling and handling of gas dielectric gases and mixtures.
Описание: Low dielectric constant materials are an important component of microelectronic devices. This comprehensive book covers the latest low-dielectric-constant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging applications in microelectronics. Highly informative contributions from leading academic and industrial laboratories provide comprehensive information about materials technologies for < 0.18 um process technology. Topics include: Organic dielectric materials, Inorganic dielectric materials, Composite dielectric materials, Metrology and characterization techniques, Integration, Reliability. This volume will be an invaluable resource for professionals, scientists, researchers and graduate students involved in dielectric technology development, materials science, polymer science, and semiconductor devices and processing.
Описание: The Economic Implications of Moore's Law.- Brief Notes on the History of Gate Dielectrics in MOS Devices.- SiO2-Base MOSFETS: Film Growth and Si-SiO2-Interface Properties.- Oxide Reliability Issues.- Gate Dielectric Scaling to 2.0-1.0 nm: SiO2 and Silicon Oxynitride.- Optimal Scaling Methodologies and Transistor Performance Utilizing SiO2/Silicon Oxynitride.- Silicon Oxynitride Gate Dielectric for Reducing Gate Leakage and Boron Penetration Prior to High-K Gate Dielectric Implementation.- Alternative Dielectrics for Silicon-Based Transistors: Selection via Multiple Criteria.- Materials Issues for High-K Gate Dielectric Selection and Integration.- Designing Interface Composition and Structure in High Dielectric Constant Gate Stacks.- Electronic Structure of Alternative High-K Dielectrics.- Physicochemical Properties of Selected 4d, 5d, and Rare-Earth Metals in Silicon.- High-K Gate Dielectric Deposition Technologies.- Issues in Metal Gate Electrode Selection for Bulk CMOS Devices.- CMOS IC Fabrication Issues for High-K Gate Dielectric and Alternate Electrode Materials.- Characterization and Metrology of Medium Dielectric Constant Gate Dielectric Films.- Electrical Measurement Issues for Alternative Gate Stack Systems.- High-K Gate Dielectric Materials Integrated Circuit Device Design Issues.- High-K Crystalline Gate Dielectrics: A Research Perspective.- High-K Crystalline Gate Dielectrics: An IC Manufacturer's Perspective.- Advanced MOS-Devices.
Описание: Covers developments in advanced dielectric, piezoelectric, and ferroelectric materials. This book explores high strain high performance piezo- and ferro-electric single crystals, electric field-induced effects and domain engineering, and morphotropic phase boundary-related phenomena. It looks at research on these materials and their properties.
Описание: The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.
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