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Materials Fundamentals of Gate Dielectrics, Demkov Alexander A., Navrotsky Alexandra


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Цена: 18232р.
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Наличие: Поставка под заказ.  Есть в наличии на складе поставщика.
Склад Англия: 243 шт.  Склад Америка: 64 шт.  
При оформлении заказа до: 10 янв 2020
Ориентировочная дата поставки: начало Февраля

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Автор: Demkov Alexander A., Navrotsky Alexandra
Название:  Materials Fundamentals of Gate Dielectrics
Издательство: Springer
Классификация:
Физика
Физическая химия
Электронная техника

ISBN: 1402030770
ISBN-13(EAN): 9781402030772
ISBN: 1-402-03077-0
ISBN-13(EAN): 978-1-402-03077-2
Обложка/Формат: Hardback
Страницы: 476
Вес: 0.851 кг.
Дата издания: 2005
Язык: ENG
Иллюстрации: 1, black & white illustrations
Размер: 24.69 x 16.26 x 2.74 cm
Читательская аудитория: Professional & vocational
Ссылка на Издательство: Link
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Поставляется из: Германии
Описание: This book presents the fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scaling of CMOS devices. As this is a rapidly evolving field of research we choose to focus on the materials that determine the performance of device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause severe integration difficulties, thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are well-known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides requires the use of state-of-the-art first-principles calculations. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and X-ray photoelectron spectroscopy.Many of the problems encountered in the world of CMOS are also relevant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given. The book will be of interest to those actively engaged in gate dielectric research, and to graduate students in Materials Science, Materials Physics, Materials Chemistry, and Electrical Engineering.
Дополнительное описание: Формат: 240x160
Круг читателей: University and government libraries, researchers and graduate students in materials sciences, materials physics, materials chemistry, semiconductor processing and electrical engineering
Ключевые слова: Semiconductors and insulators
Surface and interface physics
Inorganic chemistry
High-K gate dielectrics
physical chemistry
Язык: eng
Оглавление: Preface. 1: Materials and Physical Properties of High-K Oxide Films; Ran Liu. 2: Device Principles of High-K Dielectrics; Kurt Eisenbeiser. 3: Thermodynamics of Oxide Systems Relevant to Alternative Gate Dielectrics; Alexandra Navrotsky and Sergey V. Ushakov. 4: Electronic Structure and Chemical Bonding in High-K Transition Metal and Lanthanide Series Rare Earth Alternative Gate Dielectrics: Applications to Direct Tunneling and Defects at Dielectric Interfaces; Gerald Lucovsky.5: Atomic Structure, Interfaces and Defects of High Dielectric Constant Gate Oxides; J. Robertson and P.W. Peacock. 6: Dielectric Properties of Simple and Complex Oxides from First-Principles; U.V. Waghmare and K.M. Rabe. 7: IVb Transition Metal Oxides and Silicates: An Ab Initio Study; Gian-Marco Rignanese. 8: The Interface Phase and Dielectric Physics for Crystalline Oxides on Semiconductors; Rodney Mckee. 9: Interfacial Properties of Epitaxial Oxide/Semiconductor Systems; Y. Liang and A.A. Demkov. 10: Functional Structures; Matt Copel. 11: Mechanistic Studies of Dielectric Growth on Silicon; Martin M. Frank and Yves J. Chabal. 12: Methodology for Development of High-k Stacked Gate Dielectrics on III–V Semiconductors; Matthias Passlack. Index





Fundamentals and Applications of Magnetic Materials

Автор: Krishnan, Kannan M.
Название: Fundamentals and Applications of Magnetic Materials
ISBN: 0199570442 ISBN-13(EAN): 9780199570447
Издательство: Oxford Academ
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Цена: 7390 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This book provides a comprehensive discussion of magnetism, magnetic materials and related applications. It covers the physics of magnetism, magnetic phenomena in materials, size and dimensionality effects and applications including information storage, spin electronics, and biomedicine.

Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications

Автор: Daniele Ielmini, Rainer Waser
Название: Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications
ISBN: 3527334173 ISBN-13(EAN): 9783527334179
Издательство: Wiley
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Цена: 17243 р.
Наличие на складе: Нет в наличии.

Описание: With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those mate

Interlayer Dielectrics for Semiconductor Technologies,

Автор: Shyam P Muraka
Название: Interlayer Dielectrics for Semiconductor Technologies,
ISBN: 0125112211 ISBN-13(EAN): 9780125112215
Издательство: Elsevier Science
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Цена: 23843 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Semiconductor technologies are moving at such a fast pace that new materials are needed in all types of application. This work covers the science, properties and applications of dielectrics, their preparation, patterning, reliability and characterisation. It brings together the science and technology of interlayer dielectrics materials.

Temperature and Frequency Dependence of Complex Permittivity in Metal Oxide Dielectrics: Theory, Modelling and Measurement

Автор: Breeze
Название: Temperature and Frequency Dependence of Complex Permittivity in Metal Oxide Dielectrics: Theory, Modelling and Measurement
ISBN: 3319445456 ISBN-13(EAN): 9783319445458
Издательство: Springer
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Цена: 11219 р.
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Описание: This thesis investigates the dielectric properties of metal-oxide ceramics at microwave frequencies. It also demonstrates for the first time that a theory of harmonic phonon coupling can effectively predict the complex permittivity of metal oxides as a function of temperature and frequency. Dielectric ceramics are an important class of materials for radio-frequency, microwave and emergent terahertz technologies. Their key property is complex permittivity, the real part of which permits the miniaturisation of devices and the imaginary part of which is responsible for the absorption of electromagnetic energy. Absorption limits the practical performance of many microwave devices such as filters, oscillators, passive circuits and antennas. Complex permittivity as a function of temperature for low-loss dielectrics is determined by measuring the resonant frequency of dielectric resonators and using the radial mode matching technique to extract the dielectric properties.There have been only a handful of publications on the theory of dielectric loss, and their predictions have often been unfortunately unsatisfactory when compared to measurements of real crystals, sometimes differing by whole orders of magnitude. The main reason for this is the lack of accurate data for a harmonic coupling coefficient and phonon eigenfrequencies at arbitrary q vectors in the Brillouin zone. Here, a quantum field theory of losses in dielectrics is applied, using results from density functional perturbation theory, to predict from first principles the complex permittivity of metal oxides as functions of frequency and temperature.

Gaseous Dielectrics VIII

Автор: Christophorou
Название: Gaseous Dielectrics VIII
ISBN: 0306460564 ISBN-13(EAN): 9780306460562
Издательство: Springer
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Цена: 21845 р.
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Описание: This text covers the latest advances and developments in a wide range of basic, applied, and industrial areas of gaseous dielectrics.

Gaseous Dielectrics IX

Автор: Christophorou Loucas G., Olthoff James K.
Название: Gaseous Dielectrics IX
ISBN: 0306467054 ISBN-13(EAN): 9780306467059
Издательство: Springer
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Цена: 21504 р.
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Описание: The volume deals with contributions to the basic physics of gaseous dielectric materials and the understanding of basic gas discharge mechanisms and plasmas. It also looks at advances in gas-insulated equipment and issues of recycling and handling of gas dielectric gases and mixtures.

Crystal Growth Technology - Semiconductors and Dielectrics

Автор: Capper
Название: Crystal Growth Technology - Semiconductors and Dielectrics
ISBN: 352732593X ISBN-13(EAN): 9783527325931
Издательство: Wiley
Рейтинг:
Цена: 15153 р.
Наличие на складе: Нет в наличии.

Описание: An international team of experts presents the current methods and the latest applications in producing semiconductors and dielectrics by bulk crystal growth technology.

Low Dielectric Constant Materials for IC Applications

Автор: Ho Paul S., Leu Jihperng, Lee Wei William
Название: Low Dielectric Constant Materials for IC Applications
ISBN: 3540678190 ISBN-13(EAN): 9783540678199
Издательство: Springer
Рейтинг:
Цена: 17475 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Low dielectric constant materials are an important component of microelectronic devices. This comprehensive book covers the latest low-dielectric-constant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging applications in microelectronics. Highly informative contributions from leading academic and industrial laboratories provide comprehensive information about materials technologies for < 0.18 um process technology. Topics include: Organic dielectric materials, Inorganic dielectric materials, Composite dielectric materials, Metrology and characterization techniques, Integration, Reliability. This volume will be an invaluable resource for professionals, scientists, researchers and graduate students involved in dielectric technology development, materials science, polymer science, and semiconductor devices and processing.

Hdbk Of Low And High Dielectric Constant Materials & Their Applic

Автор: Nalwa
Название: Hdbk Of Low And High Dielectric Constant Materials & Their Applic
ISBN: 0125139055 ISBN-13(EAN): 9780125139052
Издательство: Elsevier Science
Цена: 95838 р.
Наличие на складе: Невозможна поставка.

High Dielectric Constant Materials / VLSI MOSFET Applications

Автор: Huff H.R., Gilmer D.C.
Название: High Dielectric Constant Materials / VLSI MOSFET Applications
ISBN: 3540210814 ISBN-13(EAN): 9783540210818
Издательство: Springer
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Цена: 32632 р.
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Описание: The Economic Implications of Moore's Law.- Brief Notes on the History of Gate Dielectrics in MOS Devices.- SiO2-Base MOSFETS: Film Growth and Si-SiO2-Interface Properties.- Oxide Reliability Issues.- Gate Dielectric Scaling to 2.0-1.0 nm: SiO2 and Silicon Oxynitride.- Optimal Scaling Methodologies and Transistor Performance Utilizing SiO2/Silicon Oxynitride.- Silicon Oxynitride Gate Dielectric for Reducing Gate Leakage and Boron Penetration Prior to High-K Gate Dielectric Implementation.- Alternative Dielectrics for Silicon-Based Transistors: Selection via Multiple Criteria.- Materials Issues for High-K Gate Dielectric Selection and Integration.- Designing Interface Composition and Structure in High Dielectric Constant Gate Stacks.- Electronic Structure of Alternative High-K Dielectrics.- Physicochemical Properties of Selected 4d, 5d, and Rare-Earth Metals in Silicon.- High-K Gate Dielectric Deposition Technologies.- Issues in Metal Gate Electrode Selection for Bulk CMOS Devices.- CMOS IC Fabrication Issues for High-K Gate Dielectric and Alternate Electrode Materials.- Characterization and Metrology of Medium Dielectric Constant Gate Dielectric Films.- Electrical Measurement Issues for Alternative Gate Stack Systems.- High-K Gate Dielectric Materials Integrated Circuit Device Design Issues.- High-K Crystalline Gate Dielectrics: A Research Perspective.- High-K Crystalline Gate Dielectrics: An IC Manufacturer's Perspective.- Advanced MOS-Devices.

Handbook of Advanced Dielectric, Piezoelectric and Ferroelectric Materials

Название: Handbook of Advanced Dielectric, Piezoelectric and Ferroelectric Materials
ISBN: 1420070851 ISBN-13(EAN): 9781420070859
Издательство: Taylor&Francis
Цена: 21423 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Covers developments in advanced dielectric, piezoelectric, and ferroelectric materials. This book explores high strain high performance piezo- and ferro-electric single crystals, electric field-induced effects and domain engineering, and morphotropic phase boundary-related phenomena. It looks at research on these materials and their properties.

Defects in High-k Gate Dielectric Stacks / Nano-Electronic Semiconductor Devices

Автор: Gusev Evgeni
Название: Defects in High-k Gate Dielectric Stacks / Nano-Electronic Semiconductor Devices
ISBN: 1402043651 ISBN-13(EAN): 9781402043659
Издательство: Springer
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Цена: 23282 р.
Наличие на складе: Нет в наличии.

Описание: The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.


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