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Simulation of Semiconductor Processes and Devices 2004 / SISPAD 2004, Wachutka Gerhard, Schrag Gabriele



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Цена: 21485р.
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Автор: Wachutka Gerhard, Schrag Gabriele
Название:  Simulation of Semiconductor Processes and Devices 2004 / SISPAD 2004
Издательство: Springer
Классификация:
Проектирование
Нанотехнология
Проектирование электроники
Компьютерное моделирование

ISBN: 3211224688
ISBN-13(EAN): 9783211224687
ISBN: 3-211-22468-8
ISBN-13(EAN): 978-3-211-22468-7
Обложка/Формат: Book & CD
Страницы: 374
Вес: 0.857 кг.
Дата издания: 2004
Язык: English
Иллюстрации: Biography
Размер: 23.39 x 15.60 x 2.24
Читательская аудитория: Professional & vocational
Ссылка на Издательство: Link
Рейтинг:
Поставляется из: Германии
Описание: This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004.The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world.Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.
Дополнительное описание: Формат: 235x155
Илюстрации: 448
Круг читателей: Researchers, electrical and electronics engineers, physicists
Ключевые слова: physical modeling
fabrication processes
numerical simulation
device operation
system performance
device technology
Язык: eng





Nitride Semiconductor Devices: Principles and Simulation

Автор: Piprek
Название: Nitride Semiconductor Devices: Principles and Simulation
ISBN: 3527406670 ISBN-13(EAN): 9783527406678
Издательство: Wiley
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Цена: 23100 р.
Наличие на складе: Поставка под заказ.

Описание: Since the breakthrough demonstration of GaN-based laser diodes by Shuji Nakamura one decade ago, the field of GaN-based semiconductor devices has experienced a tremendous growth worldwide. Thus far, most research focused on nitride material properties and technology. As material properties and device fabrication become more predictable, device design and simulation is gaining increasing attention. Similar developments are known from other semiconductors (Si, GaAs, InP) where computer simulation is now an important part of device design and analysis.

Simulation of Semiconductor Processes and Devices 2001 / SISPAD 01

Автор: Tsoukalas Dimitris, Tsamis Christos
Название: Simulation of Semiconductor Processes and Devices 2001 / SISPAD 01
ISBN: 3211837086 ISBN-13(EAN): 9783211837085
Издательство: Springer
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Цена: 21485 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens.

Simulation of Semiconductor Processes and Devices 2007 / SISPAD 2007

Автор: Grasser Tibor, Selberherr Siegfried
Название: Simulation of Semiconductor Processes and Devices 2007 / SISPAD 2007
ISBN: 3211728600 ISBN-13(EAN): 9783211728604
Издательство: Springer
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Цена: 19331 р.
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Описание: This volume will contain the proceedings of the 12th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2007), which will take place in Vienna, Austria, on September 25-27, 2007. Like the previous meetings, SISPAD 2007 will provide a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. Topics covered will be device simulation, including transport in nano-structures models of VLSI device scaling limits, quantum effects, and novel devices process simulation, including both continuum and atomistic approaches equipment, topography, and lithography simulation interconnect modeling and algorithms including noise and parasitic effects compact device modeling for circuit simulation integration of circuit and device simulation user interfaces and visualization high performance computing, numerical methods and algorithms mesh generation and adaptation simulation of such devices as microsensor and optoelectronics devices benchmarking, calibration, and verification of simulators.

Noise in Semiconductor Devices / Modeling and Simulation

Автор: Bonani Fabrizio, Ghione Giovanni
Название: Noise in Semiconductor Devices / Modeling and Simulation
ISBN: 3540665838 ISBN-13(EAN): 9783540665830
Издательство: Springer
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Цена: 16602 р.
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Описание: The book deals with the numerical simulation of noise in semiconductor devices operating in linear (small-signal) and nonlinear (large-signal) conditions. The main topics of the book are: An overview of the physical basis of noise in semiconductor devices, a detailed treatment of numerical noise simulation in small-signal conditions, and a presentation of innovative developments in the noise simulation of semiconductor devices operating in large-signal quasi-periodic conditions. The main benefit that the reader will derive from the book is the ability to understand, and, if needed, replicate the development of numerical, physics-based noise simulation of semiconductor devices in small-signal and large-signal conditions.

Predictive Simulation of Semiconductor Processing / Status and Challenges

Автор: Dabrowski Jarek, Weber Eicke R.
Название: Predictive Simulation of Semiconductor Processing / Status and Challenges
ISBN: 3540204814 ISBN-13(EAN): 9783540204817
Издательство: Springer
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Цена: 31246 р.
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Описание: Predictive Simulation of Semiconductor Processing enables researchers and developers to extend the scaling range of semiconductor devices beyond the parameter range of empirical research. It requires a thorough understanding of the basic mechanisms employed in device fabrication, such as diffusion, ion implantation, epitaxy, defect formation and annealing, and contamination. This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool.

Plasma Processes for Semiconductor Fabrication

Автор: W. N. G. Hitchon
Название: Plasma Processes for Semiconductor Fabrication
ISBN: 0521018005 ISBN-13(EAN): 9780521018005
Издательство: Cambridge Academ
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Цена: 7476 р.
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Описание: Plasma processing is a central technique in the fabrication of semiconductor devices. This self-contained book provides an up-to-date description of plasma etching and deposition in semiconductor fabrication. It presents the basic physics and chemistry of these processes, and shows how they can be accurately modelled. The author begins with an overview of plasma reactors, and discusses the various models for understanding plasma processes. He then covers plasma chemistry, and describes in detail the modelling of complex plasma systems, with reference to experimental results. The book closes with a useful glossary of technical terms. No prior knowledge of plasma physics is assumed in the book. It contains many exercises and will serve as an ideal introduction to plasma processing and technology for graduate students of electrical engineering and materials science. It will also be a useful reference for practising engineers in the semiconductor industry.

Physical Chemistry of Semiconductor Materials and Processes

Автор: Pizzini
Название: Physical Chemistry of Semiconductor Materials and Processes
ISBN: 1118514572 ISBN-13(EAN): 9781118514573
Издательство: Wiley
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Цена: 7219 р.
Наличие на складе: Поставка под заказ.

Описание: The development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live.

Rapid Thermal Processing for Future Semiconductor Devices,

Автор: H. Fukuda
Название: Rapid Thermal Processing for Future Semiconductor Devices,
ISBN: 0444513396 ISBN-13(EAN): 9780444513397
Издательство: Elsevier Science
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Цена: 12331 р.
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Описание: A collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. It covers the following areas such as advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe and hetero-structure.

Semiconductor Physics And Devices

Автор: Neamen
Название: Semiconductor Physics And Devices
ISBN: 0071198628 ISBN-13(EAN): 9780071198622
Издательство: McGraw-Hill
Цена: 3325 р.
Наличие на складе: Поставка под заказ.

Описание: "Neamen's Semiconductor Physics and Devices, Third Edition" deals with the electrical properties and characteristics of semiconductor materials and devices. The goal of this book is to bring together quantum mechanics, the quantum theory of solids, semiconductor material physics, and semiconductor device physics in a clear and understandable way.

Introduction to Semiconductor Devices

Автор: Kevin F. Brennan
Название: Introduction to Semiconductor Devices
ISBN: 0521831504 ISBN-13(EAN): 9780521831505
Издательство: Cambridge Academ
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Цена: 14725 р.
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Описание: From semiconductor fundamentals to state-of-the-art semiconductor devices used in the telecommunications and computing industries, this book provides a solid grounding in the most important devices used in the hottest areas of electronic engineering today. The book includes coverage of future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. The book begins with a discussion of the fundamental properties of semiconductors. Next, state-of-the-art field effect devices are described, including MODFETs and MOSFETs. Short channel effects and the challenges faced by continuing miniaturization are then addressed. The rest of the book discusses the structure, behavior, and operating requirements of semiconductor devices used in lightwave and wireless telecommunications systems. This is both an excellent senior/graduate text, and a valuable reference for engineers and researchers in the field.

Complete Guide to Semiconductor Devices, 2nd Edition

Автор: Kwok K. Ng
Название: Complete Guide to Semiconductor Devices, 2nd Edition
ISBN: 0471202401 ISBN-13(EAN): 9780471202400
Издательство: Wiley
Рейтинг:
Цена: 19173 р.
Наличие на складе: Поставка под заказ.

Описание: Semiconductor devices are the basic components of integrated circuits and are responsible for the startling rapid growth of the electronics industry. This book gives a collection of semiconductor devices, identifying 74 major devices and more than 200 variations of these devices. It is intended for students, researchers, lawyers, and others.

Theory of Modern Electronic Semiconductor Devices

Автор: Kevin F. Brennan
Название: Theory of Modern Electronic Semiconductor Devices
ISBN: 0471415413 ISBN-13(EAN): 9780471415411
Издательство: Wiley
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Цена: 16401 р.
Наличие на складе: Поставка под заказ.

Описание: To help professionals keep up with the rapid pace of development in the semiconductor device industry, this text offers the most up-to-date treatment of semiconductor devices used in telecommunications, computers, and many other high-tech applications.


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