Описание: Since the breakthrough demonstration of GaN-based laser diodes by Shuji Nakamura one decade ago, the field of GaN-based semiconductor devices has experienced a tremendous growth worldwide. Thus far, most research focused on nitride material properties and technology. As material properties and device fabrication become more predictable, device design and simulation is gaining increasing attention. Similar developments are known from other semiconductors (Si, GaAs, InP) where computer simulation is now an important part of device design and analysis.
Описание: This volume will contain the proceedings of the 12th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2007), which will take place in Vienna, Austria, on September 25-27, 2007. Like the previous meetings, SISPAD 2007 will provide a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. Topics covered will be device simulation, including transport in nano-structures models of VLSI device scaling limits, quantum effects, and novel devices process simulation, including both continuum and atomistic approaches equipment, topography, and lithography simulation interconnect modeling and algorithms including noise and parasitic effects compact device modeling for circuit simulation integration of circuit and device simulation user interfaces and visualization high performance computing, numerical methods and algorithms mesh generation and adaptation simulation of such devices as microsensor and optoelectronics devices benchmarking, calibration, and verification of simulators.
Описание: The book deals with the numerical simulation of noise in semiconductor devices operating in linear (small-signal) and nonlinear (large-signal) conditions. The main topics of the book are: An overview of the physical basis of noise in semiconductor devices, a detailed treatment of numerical noise simulation in small-signal conditions, and a presentation of innovative developments in the noise simulation of semiconductor devices operating in large-signal quasi-periodic conditions. The main benefit that the reader will derive from the book is the ability to understand, and, if needed, replicate the development of numerical, physics-based noise simulation of semiconductor devices in small-signal and large-signal conditions.
Описание: Predictive Simulation of Semiconductor Processing enables researchers and developers to extend the scaling range of semiconductor devices beyond the parameter range of empirical research. It requires a thorough understanding of the basic mechanisms employed in device fabrication, such as diffusion, ion implantation, epitaxy, defect formation and annealing, and contamination. This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool.
Автор: W. N. G. Hitchon Название: Plasma Processes for Semiconductor Fabrication ISBN: 0521018005 ISBN-13(EAN): 9780521018005 Издательство: Cambridge Academ Рейтинг: Цена: 7476 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Plasma processing is a central technique in the fabrication of semiconductor devices. This self-contained book provides an up-to-date description of plasma etching and deposition in semiconductor fabrication. It presents the basic physics and chemistry of these processes, and shows how they can be accurately modelled. The author begins with an overview of plasma reactors, and discusses the various models for understanding plasma processes. He then covers plasma chemistry, and describes in detail the modelling of complex plasma systems, with reference to experimental results. The book closes with a useful glossary of technical terms. No prior knowledge of plasma physics is assumed in the book. It contains many exercises and will serve as an ideal introduction to plasma processing and technology for graduate students of electrical engineering and materials science. It will also be a useful reference for practising engineers in the semiconductor industry.
Описание: The development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live.
Описание: A collection of papers which were presented at the 2001 International Conference on Rapid Thermal Processing (RTP 2001) held at Ise Shima, Mie, on November 14-16, 2001. It covers the following areas such as advanced MOS gate stack, integration technologies, advancd channel engineering including shallow junction, SiGe and hetero-structure.
Автор: Neamen Название: Semiconductor Physics And Devices ISBN: 0071198628 ISBN-13(EAN): 9780071198622 Издательство: McGraw-Hill Цена: 3325 р. Наличие на складе: Поставка под заказ.
Описание: "Neamen's Semiconductor Physics and Devices, Third Edition" deals with the electrical properties and characteristics of semiconductor materials and devices.
The goal of this book is to bring together quantum mechanics, the quantum theory of solids, semiconductor material physics, and semiconductor device physics in a clear and
Автор: Kevin F. Brennan Название: Introduction to Semiconductor Devices ISBN: 0521831504 ISBN-13(EAN): 9780521831505 Издательство: Cambridge Academ Рейтинг: Цена: 14725 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: From semiconductor fundamentals to state-of-the-art semiconductor devices used in the telecommunications and computing industries, this book provides a solid grounding in the most important devices used in the hottest areas of electronic engineering today. The book includes coverage of future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. The book begins with a discussion of the fundamental properties of semiconductors. Next, state-of-the-art field effect devices are described, including MODFETs and MOSFETs. Short channel effects and the challenges faced by continuing miniaturization are then addressed. The rest of the book discusses the structure, behavior, and operating requirements of semiconductor devices used in lightwave and wireless telecommunications systems. This is both an excellent senior/graduate text, and a valuable reference for engineers and researchers in the field.
Описание: Semiconductor devices are the basic components of integrated circuits and are responsible for the startling rapid growth of the electronics industry. This book gives a collection of semiconductor devices, identifying 74 major devices and more than 200 variations of these devices. It is intended for students, researchers, lawyers, and others.
Описание: To help professionals keep up with the rapid pace of development in the semiconductor device industry, this text offers the most up-to-date treatment of semiconductor devices used in telecommunications, computers, and many other high-tech applications.
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