Описание: The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.
Описание: The Economic Implications of Moore's Law.- Brief Notes on the History of Gate Dielectrics in MOS Devices.- SiO2-Base MOSFETS: Film Growth and Si-SiO2-Interface Properties.- Oxide Reliability Issues.- Gate Dielectric Scaling to 2.0-1.0 nm: SiO2 and Silicon Oxynitride.- Optimal Scaling Methodologies and Transistor Performance Utilizing SiO2/Silicon Oxynitride.- Silicon Oxynitride Gate Dielectric for Reducing Gate Leakage and Boron Penetration Prior to High-K Gate Dielectric Implementation.- Alternative Dielectrics for Silicon-Based Transistors: Selection via Multiple Criteria.- Materials Issues for High-K Gate Dielectric Selection and Integration.- Designing Interface Composition and Structure in High Dielectric Constant Gate Stacks.- Electronic Structure of Alternative High-K Dielectrics.- Physicochemical Properties of Selected 4d, 5d, and Rare-Earth Metals in Silicon.- High-K Gate Dielectric Deposition Technologies.- Issues in Metal Gate Electrode Selection for Bulk CMOS Devices.- CMOS IC Fabrication Issues for High-K Gate Dielectric and Alternate Electrode Materials.- Characterization and Metrology of Medium Dielectric Constant Gate Dielectric Films.- Electrical Measurement Issues for Alternative Gate Stack Systems.- High-K Gate Dielectric Materials Integrated Circuit Device Design Issues.- High-K Crystalline Gate Dielectrics: A Research Perspective.- High-K Crystalline Gate Dielectrics: An IC Manufacturer's Perspective.- Advanced MOS-Devices.
Автор: Edmund G. Seebauer; Meredith C. Kratzer Название: Charged Semiconductor Defects ISBN: 1848820585 ISBN-13(EAN): 9781848820586 Издательство: Springer Рейтинг: Цена: 19532 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of `defect engineering`. This book covers the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors.
Описание: This book provides a comprehensive monograph on gate stacks in semiconductor technology. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
Автор: Daniel Fleetwood, Sokrates Pantolides and Ronald D Название: Defects in Microelectronic Materials and Devices ISBN: 1420043765 ISBN-13(EAN): 9781420043761 Издательство: Taylor&Francis Рейтинг: Цена: 18480 р. Наличие на складе: Поставка под заказ.
Описание: Offers an understanding of dehydration and the developments in the food industry. This book explains the structural and physico-chemical changes that food undergoes during dehydration and discusses ways to optimize natural resources. It also describes non-convectional heating sources, such as microwaves, infrared, and radio frequency. Focusing on silicon-based microelectronics, this book provides a comprehensive overview of progress in understanding of the effects of electrically active defects in microelectronic materials. It also focuses on defects that limit device quality, reliability, manufacturability, and radiation response.
Описание: To help professionals keep up with the rapid pace of development in the semiconductor device industry, this text offers the most up-to-date treatment of semiconductor devices used in telecommunications, computers, and many other high-tech applications.
ООО "Логосфера " Тел:+7(495) 980-12-10 www.logobook.ru