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Nanoscaled Semiconductor-on-Insulator Structures and Devices, Hall S., Nazarov A.N., Lysenko V.S.



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јвтор: Hall S., Nazarov A.N., Lysenko V.S.
Ќазвание:  Nanoscaled Semiconductor-on-Insulator Structures and Devices
»здательство: Springer
 лассификаци€:
Ќанотехнологи€
Ёлектричество
ѕроектирование электроники

ISBN: 1402063784
ISBN-13(EAN): 9781402063787
ISBN: 1-402-06378-4
ISBN-13(EAN): 978-1-402-06378-7
ќбложка/‘ормат: Hardback
—траницы: 384
¬ес: 0.713 кг.
ƒата издани€: 01.07.2007
—ери€: NATO Science for Peace and Security Series / NATO Science for Peace and Security Series B: Physics and Biophysics
язык: English
»ллюстрации: Illustrations
–азмер: 23.39 x 15.60 x 2.24
„итательска€ аудитори€: Professional & vocational
—сылка на »здательство: Link
–ейтинг:
ѕоставл€етс€ из: √ермании
ќписание: The book details many of the key issues associated with the scaling to nano-dimensions of silicon-on-insulator structures. Some papers offer new insight particularly at the device/circuit interface as appropriate for SOI which is fast becoming a mainstream technology. One of the key issues concerns mobility degradation in SOI films less than about 5nm. The advantages of combining scaled SOI devices with high permittivity (k) dielectric indicates that potential solutions are indeed available down to the 22nm node even with 5nm SOI films. A further key issue and potential вАШshow stopperвАЩ for SOI CMOS is highlighted in a number of invited and contributed papers addressing atomistic level effects. Results are presented for Monte Carlo and drift/diffusion modelling together with device compact models and circuit level simulation and this provided for a broad exposure of the problems from intrinsic physics to the circuit level. The scaling to nano-dimensions takes the technology into the realms of quantum effects and a number of papers addressed this aspect from both the technological and physics aspects. The scope of potential applications for quantum dots, quantum wires and nanotubes are considered. The use of semiconductor materials other than Si, on insulator, is featured in some sections of the book. The potential of III/V, Ge and other materials to facilitate continuation down the roadmap is illustrated by a review of the state-of-the-art.
ƒополнительное описание: ‘ормат: 235x155
 руг читателей: Specialists in the field of micro- and nanoelectronics, and for the broader circle of readers who would like to become acquainted with development and prospects of modern micro- and nanoelectronics
 лючевые слова: Biophysics
NATO
Physics
Science
Security
Sub-Series B
язык: eng





Nanoscaled Semiconductor-on-Insulator Structures and Devices

јвтор: Hall S., Nazarov A.N., Lysenko V.S.
Ќазвание: Nanoscaled Semiconductor-on-Insulator Structures and Devices
ISBN: 1402063792 ISBN-13(EAN): 9781402063794
»здательство: Springer
–ейтинг:
÷ена: 13584 р.
Ќаличие на складе: ≈сть у поставщика ѕоставка под заказ.

ќписание: The book details many of the key issues associated with the scaling to nano-dimensions of silicon-on-insulator structures. Some papers offer new insight particularly at the device/circuit interface as appropriate for SOI which is fast becoming a mainstream technology. One of the key issues concerns mobility degradation in SOI films less than about 5nm. The advantages of combining scaled SOI devices with high permittivity (k) dielectric indicates that potential solutions are indeed available down to the 22nm node even with 5nm SOI films. A further key issue and potential вАШshow stopperвАЩ for SOI CMOS is highlighted in a number of invited and contributed papers addressing atomistic level effects. Results are presented for Monte Carlo and drift/diffusion modelling together with device compact models and circuit level simulation and this provided for a broad exposure of the problems from intrinsic physics to the circuit level. The scaling to nano-dimensions takes the technology into the realms of quantum effects and a number of papers addressed this aspect from both the technological and physics aspects. The scope of potential applications for quantum dots, quantum wires and nanotubes are considered. The use of semiconductor materials other than Si, on insulator, is featured in some sections of the book. The potential of III/V, Ge and other materials to facilitate continuation down the roadmap is illustrated by a review of the state-of-the-art.

Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment

јвтор: Denis Flandre; Alexei Nazarov; Peter L.F. Hemment
Ќазвание: Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment
ISBN: 1402030126 ISBN-13(EAN): 9781402030123
»здательство: Springer
–ейтинг:
÷ена: 15151 р.
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ќписание: Collects the papers presented during NATO Advanced Research Workshop "Science and technology of Semiconductor on Insulator (SOI) structures and devices operating in a harsh environment". Presenting various innovations in SOI materials and devices, the papers focus on the reliability of SOI structures operating under harsh conditions.

Semiconductor-On-Insulator Materials for Nanoelectronics Applications

јвтор: Nazarov
Ќазвание: Semiconductor-On-Insulator Materials for Nanoelectronics Applications
ISBN: 3642158676 ISBN-13(EAN): 9783642158674
»здательство: Springer
–ейтинг:
÷ена: 19532 р.
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ќписание: Semiconductor-On-Insulator Materials for NanoElectronics ApplicationsФ is devoted to the fast evolving field of modern nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. The book contains the achievements in this field from leading companies and universities in Europe, USA, Brazil and Russia. It is articulated around four main topics: 1. New semiconductor-on-insulator materials; 2. Physics of modern SemOI devices; 3. Advanced characterization of SemOI devices; 4. Sensors and MEMS on SOI. Semiconductor-On-Insulator Materials for NanoElectonics ApplicationsФ is useful not only to specialists in nano- and microelectronics but also to students and to the wider audience of readers who are interested in new directions in modern electronics and optoelectronics.

Silicon-on-Insulator Technology / Materials to VLSI

јвтор: Colinge J.-P.
Ќазвание: Silicon-on-Insulator Technology / Materials to VLSI
ISBN: 1402077734 ISBN-13(EAN): 9781402077739
»здательство: Springer
–ейтинг:
÷ена: 19532 р.
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ќписание: Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years during which SOI Technology has little by little proven it could outperform bulk silicon in every possible way. The turn of the century turned out to be a milestone for the semiconductor industry, as high-quality SOI wafers suddenly became available in large quantities. From then on, it took only a few years to witness the use of SOI technology in a wealth of applications ranging from audio amplifiers and wristwatches to 64-bit microprocessors. This book presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, also describes the properties of other SOI devices, such as multiple gate MOSFETs, dynamic threshold devices and power MOSFETs. The advantages and performance of SOI circuits used in both niche and mainstream applications are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition is recommended for use as a textbook for classes on semiconductor device processing and physics at the graduate level.

Insulation of High-Voltage Equipment

јвтор: Ushakov Vasily Y.
Ќазвание: Insulation of High-Voltage Equipment
ISBN: 3540207295 ISBN-13(EAN): 9783540207290
»здательство: Springer
–ейтинг:
÷ена: 19532 р.
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ќписание: High-voltage electrophysical systems used for research in physics are becoming more and more common in engineering applications, as electrical insulation comprises one of the most important constituent components. This is the first monograph dealing comprehensively and on a scientific level with the insulation of such systems. In the first part of the book, the operating conditions and necessary requirements are analyzed, while the main insulation types are outlined. The second part describes the short- and long-term strengths of vacuums and gases, as well as liquid, solid, and hybrid dielectrics as functions of various influencing factors. The third and last part is devoted to the design of high-voltage insulation systems. The knowledge provided by this book will be useful to physicists designing experimental high-voltage devices as well as to electrical engineers in high-voltage technology, electrical insulation, and cable industries.

јвтор: Harry E. Orton
Ќазвание: Insulated Conductors
ISBN: 0824799348 ISBN-13(EAN): 9780824799342
»здательство: Taylor&Francis
÷ена: 13976 р.
Ќаличие на складе: ѕоставка под заказ.

Electrical Insulation for Rotating Machines: Design, Evaluation, Aging, Testing, and Repair

јвтор: Greg Stone
Ќазвание: Electrical Insulation for Rotating Machines: Design, Evaluation, Aging, Testing, and Repair
ISBN: 0471445061 ISBN-13(EAN): 9780471445067
»здательство: Wiley
–ейтинг:
÷ена: 10620 р.
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ќписание: Electrical Insulation for Rotating Machines covers all aspects in the design, deterioration, testing, and repair of the electrical insulation used in motors and generators of all ratings greater than fractional horsepower size. This authoritative reference clearly explains over 30 different rotor and stator winding failure processes, as well as methods to repair, or least slow down, each process.

Insulated Gate Bipolar Transistor IGBT Theory and Design

јвтор: Vinod Kumar Khanna
Ќазвание: Insulated Gate Bipolar Transistor IGBT Theory and Design
ISBN: 0471238457 ISBN-13(EAN): 9780471238454
»здательство: Wiley
–ейтинг:
÷ена: 18018 р.
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ќписание: A comprehensive and "state-of-the-art" coverage of the design and fabricatiof IGBT.
* All-in-one resource
* Explains the fundamentals of MOS and bipolar physics.
* Covers IGBT operation, device and process design, power modules, and new IGBT structures.

Silicon-On-Insulator (SOI) Technology,

јвтор: O Kononchuk
Ќазвание: Silicon-On-Insulator (SOI) Technology,
ISBN: 0857095269 ISBN-13(EAN): 9780857095268
»здательство: Elsevier Science
–ейтинг:
÷ена: 18288 р.
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ќписание: Silicon-On-Insulator (SOI) Technology: Manufacture and Applications covers SOI transistors and circuits, manufacture, and reliability. The book also looks at applications such as memory, power devices, and photonics. The book is divided into two parts; part one covers SOI materials and manufacture, while part two covers SOI devices and applications. The book begins with chapters that introduce techniques for manufacturing SOI wafer technology, the electrical properties of advanced SOI materials, and modeling short-channel SOI semiconductor transistors. Both partially depleted and fully depleted SOI technologies are considered. Chapters 6 and 7 concern junctionless and fin-on-oxide field effect transistors. The challenges of variability and electrostatic discharge in CMOS devices are also addressed. Parttwo covers recent and established technologies. These include SOI transistors for radio frequency applications, SOI CMOS circuits for ultralow-power applications, and improving device performance by using 3D integration of SOI integrated circuits. Finally, chapters 13 and 14 consider SOI technology for photonic integrated circuits and for micro-electromechanical systems and nano-electromechanical sensors. . The extensive coverage provided by Silicon-On-Insulator (SOI) Technology makes the book a central resource for those working in the semiconductor industry, for circuit design engineers, and for academics. It is also important for electrical engineers in the automotive and consumer electronics sectors.

Physics and Applications of SOI Lubistors: Lateral, Unidirectional, Bipolar-type Insulated-gate Transistors

јвтор: Omura
Ќазвание: Physics and Applications of SOI Lubistors: Lateral, Unidirectional, Bipolar-type Insulated-gate Transistors
ISBN: 1118487907 ISBN-13(EAN): 9781118487907
»здательство: Wiley
–ейтинг:
÷ена: 12705 р.
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ќписание: Advanced level consolidation of the technology, physics and design aspects of silicon-on-insulator (SOI) lubistors No comprehensive description of the physics and possible applications of the Lubistor can be found in a single source even though the Lubistor is already being used in SOI LSIs.

Silicone Composite Insulators

јвтор: O. Papailiou
Ќазвание: Silicone Composite Insulators
ISBN: 3642153194 ISBN-13(EAN): 9783642153198
»здательство: Springer
–ейтинг:
÷ена: 16719 р.
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ќписание: Composite Insulators for Electric Power Networks provides an overview of composite insulators for power transmission. The text serves as a guide for readers on topics like material selection, properties and design, applications, and the recycling of these composite materials.

Nanoscale processes on insulating surfaces

јвтор: Gnecco, Enrico Szymonski, Marek
Ќазвание: Nanoscale processes on insulating surfaces
ISBN: 9812837620 ISBN-13(EAN): 9789812837622
»здательство: World Scientific Publishing
–ейтинг:
÷ена: 9778 р.
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ќписание: Focuses on the fundamental studies of atomically resolved imaging, nanopatterning, metal deposition, molecular self-assembling and nanotribological processes occurring on ionic crystal surfaces. This book discusses metal oxides with wide band gap.


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