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Hot-Carrier Reliability of MOS VLSI Circuits, Leblebici



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Цена: 22461р.
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Склад Англия: 412 шт.  Склад Америка: 68 шт.  
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Автор: Leblebici
Название:  Hot-Carrier Reliability of MOS VLSI Circuits
Издательство: Springer
Классификация:
Электронная техника

ISBN: 079239352X
ISBN-13(EAN): 9780792393528
ISBN: 0-7923-9352-X
ISBN-13(EAN): 978-0-7923-9352-8
Обложка/Формат: Hardback
Страницы: 236
Вес: 0.509 кг.
Дата издания: 02.06.1993
Серия: Circuits and Systems / The Springer International Series in Engineering and Computer Science
Язык: English
Иллюстрации: Biography
Размер: 23.39 x 15.60 x 1.42
Читательская аудитория: Postgraduate, research & scholarly
Ссылка на Издательство: Link
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Поставляется из: Германии
Описание: Addresses the issues related to hot-carrier reliability of MOS VLSI circuits.This book is primarily for use by engineers and scientists who study device and circuit-level reliability in VLSI systems and develop practical reliability measures and models.



Multi-Carrier Spread-Spectrum / Proceedings from the 5th International Workshop, Oberpfaffenhofen, Germany, September 14-16, 2005

Автор: Fazel Khaled, Kaiser Stefan
Название: Multi-Carrier Spread-Spectrum / Proceedings from the 5th International Workshop, Oberpfaffenhofen, Germany, September 14-16, 2005
ISBN: 1402044356 ISBN-13(EAN): 9781402044359
Издательство: Springer
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Цена: 21841 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The benefits and success of multi-carrier (MC) modulation on one side and the flexibility offered by the spread spectrum (SS) technique on the other side have motivated many researchers to investigate the combination of both techniques since 1993. This combination known as multi-carrier spread spectrum (MC-SS) benefits from the advantages of both systems and offers high flexibility, high spectral efficiency, simple detection strategies, narrow-band interference rejection capability, etc. The basic principle of this combination is straightforward: The spreading is performed as direct sequence spread spectrum (DS-SS) but instead of transmitting the chips over a single carrier, several sub-carriers are employed. The MC modulation and demodulation can easily be realized in the digital domain by performing IFFT and FFT operations. The separation of the users’ signals can be performed in the code domain. MC-SS systems can perform the spreading in frequency direction, which allows for simple signal detection strategies. Since 1993, MC-SS has been deeply studied and new alternative solutions have been proposed. Meanwhile, deep system analysis and comparison with DS-CDMA have been performed that show the superiority of MC-CDMA. The aim of Multi-Carrier Spread-Spectrum is to edit the ensemble of the newest contributions and research results in this new field that have been presented during the 5th International Workshop on Multi-Carrier Spread-Spectrum (MC-SS 2005), held in Oberpfaffenhofen, Germany.

Multi-Carrier Spread-Spectrum & Related Topics

Автор: Fazel K., Kaiser S.
Название: Multi-Carrier Spread-Spectrum & Related Topics
ISBN: 0792376536 ISBN-13(EAN): 9780792376538
Издательство: Springer
Цена: 10445 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The benefits and success of multi-carrier (MC) modulation on one side and the flexibility offered by the spread spectrum (SS) technique on the other side has motivated many researchers to investigate the combination of both techniques since 1993. This combination, known as multi-carrier spread-spectrum (MC-SS), benefits from the main advantages of both systems and offers high flexibility, high spectral efficiency, simple detection strategies, narrow-band interference rejection capability, etc.. The basic principle of this combination is straightforward: The spreading is performed as direct sequence spread-spectrum (DS-SS) but instead of transmitting the chips over a single carrier, several sub-carriers could be employed. The MC modulation and demodulation can easily be realized in the digital domain by performing IFFT and FFT operations. The separation of the users' signals could be performed in the code domain. This means that the MC-SS system performs the spreading in the frequency domain, which allows for simple signal detection strategies. Since 1993, MCSS has been deeply studied and new alternative solutions have been proposed. Meanwhile, deep system analysis and comparison with DS-CDMA have been performed that show the superiority of MC-CDMA. The aim of Multi-Carrier Spread-Spectrum & Related Topics is to edit the ensemble of the newest contributions and research results in this new field that will be presented during three days at the Third International Workshop on Multi-Carrier Spread-Spectrum (MC-SS) & Related Topics, held in Oberpfaffenhofen, Germany.

Multi-Carrier Spread-Spectrum / For Future Generations Wireless Systems

Автор: Fazel K., Kaiser S.
Название: Multi-Carrier Spread-Spectrum / For Future Generations Wireless Systems
ISBN: 1402018371 ISBN-13(EAN): 9781402018374
Издательство: Springer
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Цена: 29156 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The benefits and success of multi-carrier (MC) modulation on one side and the flexibility offered by the spread spectrum (SS) technique on the other side have motivated many researchers to investigate the combination of both techniques since 1993. This combination known as multi-carrier spread spectrum (MC-SS) benefits from the advantages of both systems and offers high flexibility, high spectral efficiency, simple detection strategies, narrow-band interference rejection capability, etc. The basic principle of this combination is straightforward: The spreading is performed as direct sequence spread spectrum (DS-SS) but instead of transmitting the chips over a single carrier, several sub-carriers are employed. The MC modulation and demodulation can easily be realized in the digital domain by performing IFFT and FFT operations. The separation of the users' signals can be performed in the code domain. MC-SS systems can perform the spreading in frequency direction, which allows for simple signal detection strategies. Since 1993, MC-SS has been deeply studied and new alternative solutions have been proposed. Meanwhile, deep system analysis and comparison with DS-CDMA have been performed that show the superiority of MC-CDMA. The aim of this book is to edit the ensemble of the newest contributions and research results in this new field that have been presented during the 4th International Workshop on Multi-Carrier Spread-Spectrum (MC-SS 2003), held in Oberpfaffenhofen, Germany.

Mosfet modeling for vlsi simulation: theory and practice

Название: Mosfet modeling for vlsi simulation: theory and practice
ISBN: 981256862X ISBN-13(EAN): 9789812568625
Издательство: World Scientific Publishing
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Цена: 17141 р.
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Описание: A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling.

This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology.

The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.

Defect-Oriented Testing for Nano-Metric CMOS VLSI Circuits

Автор: Sachdev Manoj, Pineda de Gyvez JosГ©
Название: Defect-Oriented Testing for Nano-Metric CMOS VLSI Circuits
ISBN: 0387465464 ISBN-13(EAN): 9780387465463
Издательство: Springer
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Цена: 21485 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Failures of nano-metric technologies owing to defects and shrinking process tolerances give rise to significant challenges for IC testing. As the variation of fundamental parameters such as channel length, threshold voltage, thin oxide thickness and interconnect dimensions goes well beyond acceptable limits, new test methodologies and a deeper insight into the physics of defect-fault mappings are needed. In Defect-Oriented Testing for Nano-Metric CMOS VLSI Circuits state of the art of defect-oriented testing is presented from both a theoretical approach as well as from a practical point of view. Step-by-step handling of defect modeling, defect-oriented testing, yield modeling and its usage in common economics practices enables deeper understanding of concepts.

Power-Constrained Testing of VLSI Circuits

Автор: Nicolici Nicola, Al-Hashimi Bashir M.
Название: Power-Constrained Testing of VLSI Circuits
ISBN: 140207235X ISBN-13(EAN): 9781402072352
Издательство: Springer
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Цена: 15670 р.
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Описание: Minimization of power dissipation in very large scale integrated (VLSI) circuits is important to improve reliability and reduce packaging costs. While many techniques have investigated power minimization during the functional (normal) mode of operation, it is important to examine the power dissipation during the test circuit activity is substantially higher during test than during functional operation. For example, during the execution of built-in self-test (BIST) in-field sessions, excessive power dissipation can decrease the reliability of the circuit under test due to higher temperature and current density.Power-Constrained Testing of VLSI Circuits focuses on techniques for minimizing power dissipation during test application at logic and register-transfer levels of abstraction of the VLSI design flow. The first part of this book surveys the existing techniques for power constrained testing of VLSI circuits. In the second part, several test automation techniques for reducing power in scan-based sequential circuits and BIST data paths are presented.

Hot-Carrier Effects in MOS Devices,

Автор: Eiji Takeda
Название: Hot-Carrier Effects in MOS Devices,
ISBN: 0126822409 ISBN-13(EAN): 9780126822403
Издательство: Elsevier Science
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Цена: 5742 р.
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Описание: The exploding number of uses for ultra fast, ultra small integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. This work encompasses the research and discoveries made in the fast-paced area of hot carriers, and also includes the basics of MOS devices.

Carrier Transport in Nanoscale MOS Transistors

Автор: Tsuchiya Hideaki
Название: Carrier Transport in Nanoscale MOS Transistors
ISBN: 1118871669 ISBN-13(EAN): 9781118871669
Издательство: Wiley
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Цена: 11550 р.
Наличие на складе: Поставка под заказ.

Описание: A comprehensive advanced level examination of the transport theory of nanoscale devices

  • Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport
  • Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations
  • The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds
Fundamentals of Carrier Transport

Автор: Lundstrom
Название: Fundamentals of Carrier Transport
ISBN: 0521637244 ISBN-13(EAN): 9780521637244
Издательство: Cambridge Academ
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Цена: 8052 р.
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Описание: An accessible introduction to the behaviour of charged carriers in semiconductors and semiconductor devices.

Nonequilibrium Carrier Dynamics in Semiconductors / Proceedings of the 14th International Conference, July 25-29, 2005, Chicago, USA

Автор: Saraniti Marco, Ravaioli Umberto
Название: Nonequilibrium Carrier Dynamics in Semiconductors / Proceedings of the 14th International Conference, July 25-29, 2005, Chicago, USA
ISBN: 3540365877 ISBN-13(EAN): 9783540365877
Издательство: Springer
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Цена: 27345 р.
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Описание: "Nonequilibrium Carrier Dynamics in Semiconductors" is a well-established, specialist conference, held every 2 years, covering a range of topics of current interest to R&D in semiconductor physics/materials, optoelectronics, nanotechnology, quantum information processing. Papers accepted for publication are selected and peer-reviewed by members of the Program Committee during the conference to ensure both rapid and high-quality processing.

Nonequilibrium Carrier Dynamics in Semiconductors

Автор: Marco Saraniti; Umberto Ravaioli
Название: Nonequilibrium Carrier Dynamics in Semiconductors
ISBN: 3642071694 ISBN-13(EAN): 9783642071690
Издательство: Springer
Рейтинг:
Цена: 27345 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: "Nonequilibrium Carrier Dynamics in Semiconductors" is a well-established, specialist conference, held every two years, covering a range of topics of current interest to R&D in semiconductor physics/materials, optoelectronics, nanotechnology, quantum information processing.

VLSI-SoC: Design for Reliability, Security, and Low Power

Автор: Shin
Название: VLSI-SoC: Design for Reliability, Security, and Low Power
ISBN: 331946096X ISBN-13(EAN): 9783319460963
Издательство: Springer
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Цена: 8151 р.
Наличие на складе: Поставка под заказ.

Описание: This book contains extended and revised versions of the best papers presented at the 23rd IFIP WG 10.5/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2015, held in Daejeon, Korea, in October 2015. The 10 papers included in the book were carefully reviewed and selected from the 44 full papers presented at the conference. The papers cover a wide range of topics in VLSI technology and advanced research. They address the current trend toward increasing chip integration and technology process advancements bringing about new challenges both at the physical and system-design levels, as well as in the test of these systems.


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