Описание: The benefits and success of multi-carrier (MC) modulation on one side and the flexibility offered by the spread spectrum (SS) technique on the other side have motivated many researchers to investigate the combination of both techniques since 1993. This combination known as multi-carrier spread spectrum (MC-SS) benefits from the advantages of both systems and offers high flexibility, high spectral efficiency, simple detection strategies, narrow-band interference rejection capability, etc. The basic principle of this combination is straightforward: The spreading is performed as direct sequence spread spectrum (DS-SS) but instead of transmitting the chips over a single carrier, several sub-carriers are employed. The MC modulation and demodulation can easily be realized in the digital domain by performing IFFT and FFT operations. The separation of the usersвЂ™ signals can be performed in the code domain. MC-SS systems can perform the spreading in frequency direction, which allows for simple signal detection strategies. Since 1993, MC-SS has been deeply studied and new alternative solutions have been proposed. Meanwhile, deep system analysis and comparison with DS-CDMA have been performed that show the superiority of MC-CDMA. The aim of Multi-Carrier Spread-Spectrum is to edit the ensemble of the newest contributions and research results in this new field that have been presented during the 5th International Workshop on Multi-Carrier Spread-Spectrum (MC-SS 2005), held in Oberpfaffenhofen, Germany.

Автор: Fazel K., Kaiser S. Название: Multi-Carrier Spread-Spectrum & Related Topics ISBN: 0792376536 ISBN-13(EAN): 9780792376538 Издательство: Springer Цена: 10445 р. Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The benefits and success of multi-carrier (MC) modulation on one side and the flexibility offered by the spread spectrum (SS) technique on the other side has motivated many researchers to investigate the combination of both techniques since 1993. This combination, known as multi-carrier spread-spectrum (MC-SS), benefits from the main advantages of both systems and offers high flexibility, high spectral efficiency, simple detection strategies, narrow-band interference rejection capability, etc.. The basic principle of this combination is straightforward: The spreading is performed as direct sequence spread-spectrum (DS-SS) but instead of transmitting the chips over a single carrier, several sub-carriers could be employed. The MC modulation and demodulation can easily be realized in the digital domain by performing IFFT and FFT operations. The separation of the users' signals could be performed in the code domain. This means that the MC-SS system performs the spreading in the frequency domain, which allows for simple signal detection strategies. Since 1993, MCSS has been deeply studied and new alternative solutions have been proposed. Meanwhile, deep system analysis and comparison with DS-CDMA have been performed that show the superiority of MC-CDMA. The aim of Multi-Carrier Spread-Spectrum & Related Topics is to edit the ensemble of the newest contributions and research results in this new field that will be presented during three days at the Third International Workshop on Multi-Carrier Spread-Spectrum (MC-SS) & Related Topics, held in Oberpfaffenhofen, Germany.

Описание: The benefits and success of multi-carrier (MC) modulation on one side and the flexibility offered by the spread spectrum (SS) technique on the other side have motivated many researchers to investigate the combination of both techniques since 1993. This combination known as multi-carrier spread spectrum (MC-SS) benefits from the advantages of both systems and offers high flexibility, high spectral efficiency, simple detection strategies, narrow-band interference rejection capability, etc. The basic principle of this combination is straightforward: The spreading is performed as direct sequence spread spectrum (DS-SS) but instead of transmitting the chips over a single carrier, several sub-carriers are employed. The MC modulation and demodulation can easily be realized in the digital domain by performing IFFT and FFT operations. The separation of the users' signals can be performed in the code domain. MC-SS systems can perform the spreading in frequency direction, which allows for simple signal detection strategies. Since 1993, MC-SS has been deeply studied and new alternative solutions have been proposed. Meanwhile, deep system analysis and comparison with DS-CDMA have been performed that show the superiority of MC-CDMA. The aim of this book is to edit the ensemble of the newest contributions and research results in this new field that have been presented during the 4th International Workshop on Multi-Carrier Spread-Spectrum (MC-SS 2003), held in Oberpfaffenhofen, Germany.

Название: Mosfet modeling for vlsi simulation: theory and practice ISBN: 981256862X ISBN-13(EAN): 9789812568625 Издательство: World Scientific Publishing Рейтинг: Цена: 17141 р. Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and
graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among
similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor
modeling.

This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field
Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into
account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology.

The assumptions used to arrive at the models are emphasized
so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also
covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.

Описание: Failures of nano-metric technologies owing to defects and shrinking process tolerances give rise to significant challenges for IC testing. As the variation of fundamental parameters such as channel length, threshold voltage, thin oxide thickness and interconnect dimensions goes well beyond acceptable limits, new test methodologies and a deeper insight into the physics of defect-fault mappings are needed. In Defect-Oriented Testing for Nano-Metric CMOS VLSI Circuits state of the art of defect-oriented testing is presented from both a theoretical approach as well as from a practical point of view. Step-by-step handling of defect modeling, defect-oriented testing, yield modeling and its usage in common economics practices enables deeper understanding of concepts.

Автор: Nicolici Nicola, Al-Hashimi Bashir M. Название: Power-Constrained Testing of VLSI Circuits ISBN: 140207235X ISBN-13(EAN): 9781402072352 Издательство: Springer Рейтинг: Цена: 15670 р. Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Minimization of power dissipation in very large scale integrated (VLSI) circuits is important to improve reliability and reduce packaging costs. While many techniques have investigated power minimization during the functional (normal) mode of operation, it is important to examine the power dissipation during the test circuit activity is substantially higher during test than during functional operation. For example, during the execution of built-in self-test (BIST) in-field sessions, excessive power dissipation can decrease the reliability of the circuit under test due to higher temperature and current density.Power-Constrained Testing of VLSI Circuits focuses on techniques for minimizing power dissipation during test application at logic and register-transfer levels of abstraction of the VLSI design flow. The first part of this book surveys the existing techniques for power constrained testing of VLSI circuits. In the second part, several test automation techniques for reducing power in scan-based sequential circuits and BIST data paths are presented.

Автор: Eiji Takeda Название: Hot-Carrier Effects in MOS Devices, ISBN: 0126822409 ISBN-13(EAN): 9780126822403 Издательство: Elsevier Science Рейтинг: Цена: 5742 р. Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The exploding number of uses for ultra fast, ultra small integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. This work encompasses the research and discoveries made in the fast-paced area of hot carriers, and also includes the basics of MOS devices.

Автор: Tsuchiya Hideaki Название: Carrier Transport in Nanoscale MOS Transistors ISBN: 1118871669 ISBN-13(EAN): 9781118871669 Издательство: Wiley Рейтинг: Цена: 11550 р. Наличие на складе: Поставка под заказ.

Описание: A comprehensive advanced level examination of the transport theory of nanoscale devices

Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport

Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations

The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds

Автор: Lundstrom Название: Fundamentals of Carrier Transport ISBN: 0521637244 ISBN-13(EAN): 9780521637244 Издательство: Cambridge Academ Рейтинг: Цена: 8052 р. Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: An accessible introduction to the behaviour of charged carriers in semiconductors and semiconductor devices.

Описание: "Nonequilibrium Carrier Dynamics in Semiconductors" is a well-established, specialist conference, held every 2 years, covering a range of topics of current interest to R&D in semiconductor physics/materials, optoelectronics, nanotechnology, quantum information processing. Papers accepted for publication are selected and peer-reviewed by members of the Program Committee during the conference to ensure both rapid and high-quality processing.

Автор: Marco Saraniti; Umberto Ravaioli Название: Nonequilibrium Carrier Dynamics in Semiconductors ISBN: 3642071694 ISBN-13(EAN): 9783642071690 Издательство: Springer Рейтинг: Цена: 27345 р. Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: "Nonequilibrium Carrier Dynamics in Semiconductors" is a well-established, specialist conference, held every two years, covering a range of topics of current interest to R&D in semiconductor physics/materials, optoelectronics, nanotechnology, quantum information processing.

Описание: This book contains extended and revised versions of the best papers presented at the 23rd IFIP WG 10.5/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2015, held in Daejeon, Korea, in October 2015. The 10 papers included in the book were carefully reviewed and selected from the 44 full papers presented at the conference. The papers cover a wide range of topics in VLSI technology and advanced research. They address the current trend toward increasing chip integration and technology process advancements bringing about new challenges both at the physical and system-design levels, as well as in the test of these systems.

ООО "Логосфера " Тел:+7(495) 980-12-10 www.logobook.ru