Introduction to semiconductor devices, Neamen, Donald A.
јвтор: Brennan Ќазвание: Introduction to Semiconductor Devices ISBN: 0521153611 ISBN-13(EAN): 9780521153614 »здательство: Cambridge Academ –ейтинг: ÷ена: 6901 р. Ќаличие на складе: ≈сть у поставщика ѕоставка под заказ.
ќписание: From semiconductor fundamentals to semiconductor devices used in the telecommunications and computing industries, this 2005 book provides a solid grounding in the most important devices used in the hottest areas of electronic engineering. The book includes coverage of future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductors. Next, the field effect devices are described, including MODFETs and MOSFETs. Short channel effects and the challenges faced by continuing miniaturisation are then addressed. The rest of the book discusses the structure, behaviour, and operating requirements of semiconductor devices used in lightwave and wireless telecommunications systems. This is both an excellent senior/graduate text, and a valuable reference for engineers and researchers in the field.
ќписание: "An Introduction to Semiconductor Devices" by Donald Neamen provides an understanding of the characteristics, operations and limitations of semiconductor devices. In order to provide this understanding, the book brings together the fundamental physics of the semiconductor material and the semiconductor device physics. This new text provides an accessible and modern presentation of material. Quantum mechanic material is minimal, and the most advanced material is designated with an icon. Excellent pedagogy is present throughout the book in the form of interesting chapters openers, worked examples, a variety of exercises, key terms, and end of chapter problems.
јвтор: Seeger Karlheinz Ќазвание: Semiconductor Physics / An Introduction ISBN: 3540219579 ISBN-13(EAN): 9783540219576 »здательство: Springer –ейтинг: ÷ена: 10742 р. Ќаличие на складе: ≈сть у поставщика ѕоставка под заказ.
ќписание: This well-established monograph, updated and now in its ninth edition, deals mainly with electron transport in, and optical properties of semiconductors. It includes lasers, e.g. the quantum cascade laser, quantum processes such as the quantum Hall effect, quantum dots, fullerenes, carbon nanotubes, molecular electronics, the nitrides, and many other recent discoveries in the field. New diagrams and tables provide a comprehensive source of materials data. Selected problems help readers to consolidate their knowledge and invite teachers to use this text for graduate courses on semiconductor physics, solid state physics, and physical electronics.
ќписание: The main objective of this book is to provide an introductory perspective of the basic principles of semiconductors, being an integrated overview of the basic properties, applications, and characterization of semiconductors in a single volume. This book is suitable for both undergraduate and graduate students, and for researchers, working in a wide variety of fields in physical and engineering sciences, who require an introductory and concise description of the field of semiconductors.
ќписание: It is well known that most important electronic devices use Schottky junctions and heterojunctions. Unfortunately there is not an advanced book introducing heterojunctions systematically. Introduction to Organic Semiconductor Heterojunctions fills the gap.
ќписание: To help professionals keep up with the rapid pace of development in the semiconductor device industry, this text offers the most up-to-date treatment of semiconductor devices used in telecommunications, computers, and many other high-tech applications.
ќписание: The book deals with the numerical simulation of noise in semiconductor devices operating in linear (small-signal) and nonlinear (large-signal) conditions. The main topics of the book are: An overview of the physical basis of noise in semiconductor devices, a detailed treatment of numerical noise simulation in small-signal conditions, and a presentation of innovative developments in the noise simulation of semiconductor devices operating in large-signal quasi-periodic conditions. The main benefit that the reader will derive from the book is the ability to understand, and, if needed, replicate the development of numerical, physics-based noise simulation of semiconductor devices in small-signal and large-signal conditions.
јвтор: Colinge J.-P., Colinge C.A. Ќазвание: Physics of Semiconductor Devices ISBN: 1402070187 ISBN-13(EAN): 9781402070181 »здательство: Springer –ейтинг: ÷ена: 19532 р. Ќаличие на складе: ≈сть у поставщика ѕоставка под заказ.
ќписание: Physics of Semiconductor Devices is a textbook aimed at college undergraduate and graduate teaching. It covers both basic classic topics such as energy band theory and the gradual-channel model of the MOSFET as well as advanced concepts and devices such as MOSFET short-channel effects, low-dimensional devices and single-electron transistors. As a prerequisite, this text requires mathematics through differential equations and modern physics where students are introduced to quantum mechanics. Concepts are introduced to the reader in a simple way, often using comparisons to everyday-life experiences such as simple fluid mechanics. They are then explained in depth and mathematical developments are fully described. Physics of Semiconductor Devices contains a list of problems that can be used as homework assignments or can be solved in class to exemplify the theory. Many of these problems make use of Matlab and are aimed at illustrating theoretical concepts in a graphical manner. A series of these Matlab problems is based on a simple finite-element solution of semiconductor equations. These yield the exact solution to equations that have no analytical solutions and are usually solved using approximations, such as the depletion approximation. The exact numerical solution can then be graphically compared to the solution using the approximation. The different chapters of Physics of Semiconductor Devices cover the following material: Energy Band Theory. Theory of Electrical Conduction. Generation/Recombination Phenomena. The PN Junction Diode. Metal-semiconductor contacts. JFET and MESFET. The MOS Transistor. The Bipolar Transistor. Heterojunction Devices. Quantum-Effect Devices. Semiconductor Processing.
ќписание: This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004.The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world.Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.
ќписание: The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.
ќписание: The book details many of the key issues associated with the scaling to nano-dimensions of silicon-on-insulator structures. Some papers offer new insight particularly at the device/circuit interface as appropriate for SOI which is fast becoming a mainstream technology. One of the key issues concerns mobility degradation in SOI films less than about 5nm. The advantages of combining scaled SOI devices with high permittivity (k) dielectric indicates that potential solutions are indeed available down to the 22nm node even with 5nm SOI films. A further key issue and potential вАШshow stopperвАЩ for SOI CMOS is highlighted in a number of invited and contributed papers addressing atomistic level effects. Results are presented for Monte Carlo and drift/diffusion modelling together with device compact models and circuit level simulation and this provided for a broad exposure of the problems from intrinsic physics to the circuit level. The scaling to nano-dimensions takes the technology into the realms of quantum effects and a number of papers addressed this aspect from both the technological and physics aspects. The scope of potential applications for quantum dots, quantum wires and nanotubes are considered. The use of semiconductor materials other than Si, on insulator, is featured in some sections of the book. The potential of III/V, Ge and other materials to facilitate continuation down the roadmap is illustrated by a review of the state-of-the-art.
јвтор: Kevin F. Brennan Ќазвание: Introduction to Semiconductor Devices ISBN: 0521831504 ISBN-13(EAN): 9780521831505 »здательство: Cambridge Academ –ейтинг: ÷ена: 14725 р. Ќаличие на складе: ≈сть у поставщика ѕоставка под заказ.
ќписание: From semiconductor fundamentals to state-of-the-art semiconductor devices used in the telecommunications and computing industries, this book provides a solid grounding in the most important devices used in the hottest areas of electronic engineering today. The book includes coverage of future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. The book begins with a discussion of the fundamental properties of semiconductors. Next, state-of-the-art field effect devices are described, including MODFETs and MOSFETs. Short channel effects and the challenges faced by continuing miniaturization are then addressed. The rest of the book discusses the structure, behavior, and operating requirements of semiconductor devices used in lightwave and wireless telecommunications systems. This is both an excellent senior/graduate text, and a valuable reference for engineers and researchers in the field.