История
+7(495) 980-12-10
  10:00-18:00 пн-сб
  shop@logobook.ru
   
    Поиск книг                    Поиск по списку ISBN Расширенный поиск    
Найти
  Зарубежные издательства Российские издательства  
  Авторы | Каталог книг | Издательства | Новинки | Учебная литература | Специальные предложения | Бестселлеры
 
 
Вход в систему
Книги
Информация
Читайте отзывы покупателей и оценивайте качество магазина на Яндекс.Маркете
Online Каталоги
Каталог учебной литературы
по английскому языку >>>

Каталог учебной литературы
по английскому языку >>>


Fundamentals of Modern VLSI Devices, Taur Yuan

Автор: Taur Yuan
Название:  Fundamentals of Modern VLSI Devices
Издательство: Cambridge Academ
Классификация:
Электронная техника

ISBN: 0521832942
ISBN-13(EAN): 9780521832946
ISBN: 0-521-83294-2
ISBN-13(EAN): 978-0-521-83294-6
Обложка/Формат: Hardback
Страницы: 680
Вес: 1.47 кг.
Дата издания: 01.09.2009
Язык: ENG
Издание: 2 rev ed
Иллюстрации: 83 exercises
Размер: 24.64 x 17.53 x 3.56 cm
Читательская аудитория: Tertiary education (us: college)
Ссылка на Издательство: Link
Рейтинг:
Поставляется из: Англии
Описание: Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.
Дополнительное описание: Physical constants and unit conversions; List of symbols; Preface to the second edition; Preface to the first edition; 1. Introduction; 2. Basic device physics; 3. MOSFET devices; 4. CMOS device design; 5. CMOS performance factors; 6. Bipolar devices; 7.


Добавить в Мои желания
Варианты приобретения
Наличие на складе Кол-во / Цена р.
Отсутствует. Возможна поставка под заказ.

При оформлении заказа до: 26 окт 2018
Ориентировочная дата поставки: Середина Ноября
При условии наличия книги у поставщика.
4684.00
 о цене
Добавить в корзину


      Новое издание
Fundamentals of Modern VLSI Devices

Автор: Taur
Название: Fundamentals of Modern VLSI Devices
ISBN: 1107635713 ISBN-13(EAN): 9781107635715
Издательство: Cambridge Academ
Цена: 4162 р.
Наличие на складе: Есть у поставщикаПоставка под заказ.
Описание: An updated edition of a classic, invaluable for both practical transistor design and teaching.

      Старое издание
Fundamentals of Modern VLSI Devices

Автор: Taur
Название: Fundamentals of Modern VLSI Devices
ISBN: 0521559596 ISBN-13(EAN): 9780521559591
Издательство: Cambridge Academ
Цена: 2602 р.
Наличие на складе: Поставка под заказ.
Описание: This book examines in detail the basic properties and dign, including chip integration, of CMOS and bipolar VLSI devices and discusses the various factors that affect their performance. The authors begin with a thorough review of the relevant aspects of semiconductor physics, and proceed to a description of the design of CMOS and bipolar devices. The optimization of these devices for VLSI applications is also covered. The authors highlight the intricate interdependencies and subtle trade-offs between those device parameters, such as power consumption and packing density, that affect circuit performance and manufacturability. They also discuss in detail the scaling, and physical limits to the scaling, of CMOS and bipolar devices. The book contains many exercises, and can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices. It will also be a valuable reference volume for practising engineers involved in research and development in the electronics industry.


Fundamentals of Modern VLSI Devices

Автор: Taur
Название: Fundamentals of Modern VLSI Devices
ISBN: 0521559596 ISBN-13(EAN): 9780521559591
Издательство: Cambridge Academ
Рейтинг:
Цена: 2602 р.
Наличие на складе: Поставка под заказ.

Описание: This book examines in detail the basic properties and dign, including chip integration, of CMOS and bipolar VLSI devices and discusses the various factors that affect their performance. The authors begin with a thorough review of the relevant aspects of semiconductor physics, and proceed to a description of the design of CMOS and bipolar devices. The optimization of these devices for VLSI applications is also covered. The authors highlight the intricate interdependencies and subtle trade-offs between those device parameters, such as power consumption and packing density, that affect circuit performance and manufacturability. They also discuss in detail the scaling, and physical limits to the scaling, of CMOS and bipolar devices. The book contains many exercises, and can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices. It will also be a valuable reference volume for practising engineers involved in research and development in the electronics industry.

Fundamentals of Modern VLSI Devices

Автор: Taur
Название: Fundamentals of Modern VLSI Devices
ISBN: 1107635713 ISBN-13(EAN): 9781107635715
Издательство: Cambridge Academ
Рейтинг:
Цена: 4162 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: An updated edition of a classic, invaluable for both practical transistor design and teaching.

Sputtering Materials for VLSI and Thin Film Devices,

Автор: Jaydeep Sarkar
Название: Sputtering Materials for VLSI and Thin Film Devices,
ISBN: 0815515936 ISBN-13(EAN): 9780815515937
Издательство: Elsevier Science
Рейтинг:
Цена: 14493 р.
Наличие на складе: Поставка под заказ.

Описание: Reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall productivity of various processes.

VLSI Test Principles and Architectures,

Автор: Laung-Terng Wang
Название: VLSI Test Principles and Architectures,
ISBN: 0123705975 ISBN-13(EAN): 9780123705976
Издательство: Elsevier Science
Рейтинг:
Цена: 6447 р.
Наличие на складе: Поставка под заказ.

Описание: A comprehensive guide to DFT methods that shows the readers how to design a testable and quality product, drive down test cost, improve product quality and yield, and speed up time-to-market and time-to-volume. It provides coverage of design for testability. It presents coverage of industry practices commonly found in commercial DFT tools.

Silicon-on-Insulator Technology / Materials to VLSI

Автор: Colinge J.-P.
Название: Silicon-on-Insulator Technology / Materials to VLSI
ISBN: 1402077734 ISBN-13(EAN): 9781402077739
Издательство: Springer
Рейтинг:
Цена: 17476 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years during which SOI Technology has little by little proven it could outperform bulk silicon in every possible way. The turn of the century turned out to be a milestone for the semiconductor industry, as high-quality SOI wafers suddenly became available in large quantities. From then on, it took only a few years to witness the use of SOI technology in a wealth of applications ranging from audio amplifiers and wristwatches to 64-bit microprocessors. This book presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, also describes the properties of other SOI devices, such as multiple gate MOSFETs, dynamic threshold devices and power MOSFETs. The advantages and performance of SOI circuits used in both niche and mainstream applications are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition is recommended for use as a textbook for classes on semiconductor device processing and physics at the graduate level.

Interconnection Noise in VLSI Circuits

Автор: Moll Francesc, Roca Miquel
Название: Interconnection Noise in VLSI Circuits
ISBN: 1402077335 ISBN-13(EAN): 9781402077333
Издательство: Springer
Цена: 11215 р.
Наличие на складе: Нет в наличии.

Описание: Interconnection Noise in VLSI Circuits addresses two main problems with interconnections at the chip and package level: crosstalk and simultaneous switching noise. It is intended to provide the notions required for understanding the problem of modeling starting from physical arguments, so that it is possible to select an appropriate interconnection model that is both simple and accurate for the type of problems arising. Later, simple models of crosstalk and switching noise are used to give an intuitive understanding of these problems. Finally, some verification and test issues related to interconnection noise are discussed. Throughout the book, the examples used to illustrate the discussion are based on digital CMOS circuits, but the general treatment of the problems is made from a fundamental point of view, so that the discussion can be applied to different technologies. The book should be of interest to chip designers, especially for digital designers dealing with interconnect problems who want a deeper explanation of these phenomena. In this sense, the book's orientation is towards giving general information rather than being a compilation of practical cases. Each chapter contains a list of references for the topics dealt with, both recent and classic ones.

Essentials of Electronic Testing for Digital, Memory, and Mixed-Signal VLSI Circuits / Second Edition

Автор: Bushnell M., Agrawal Vishwani
Название: Essentials of Electronic Testing for Digital, Memory, and Mixed-Signal VLSI Circuits / Second Edition
ISBN: 0792379918 ISBN-13(EAN): 9780792379911
Издательство: Springer
Рейтинг:
Цена: 9611 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Today`s electronic design and test engineers deal with several types of subsystems, namely, digital, memory, and mixed-signal, each requiring different test and design for testability methods. This book provides a careful selection of essential topics on all three types of circuits.

Power-Constrained Testing of VLSI Circuits

Автор: Nicolici Nicola, Al-Hashimi Bashir M.
Название: Power-Constrained Testing of VLSI Circuits
ISBN: 140207235X ISBN-13(EAN): 9781402072352
Издательство: Springer
Рейтинг:
Цена: 14020 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Minimization of power dissipation in very large scale integrated (VLSI) circuits is important to improve reliability and reduce packaging costs. While many techniques have investigated power minimization during the functional (normal) mode of operation, it is important to examine the power dissipation during the test circuit activity is substantially higher during test than during functional operation. For example, during the execution of built-in self-test (BIST) in-field sessions, excessive power dissipation can decrease the reliability of the circuit under test due to higher temperature and current density.Power-Constrained Testing of VLSI Circuits focuses on techniques for minimizing power dissipation during test application at logic and register-transfer levels of abstraction of the VLSI design flow. The first part of this book surveys the existing techniques for power constrained testing of VLSI circuits. In the second part, several test automation techniques for reducing power in scan-based sequential circuits and BIST data paths are presented.

Analog Design for CMOS VLSI Systems

Автор: Maloberti Franco
Название: Analog Design for CMOS VLSI Systems
ISBN: 0792375505 ISBN-13(EAN): 9780792375500
Издательство: Springer
Рейтинг:
Цена: 20097 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: - Applicable for bookstore catalogue

Layout Optimization in VLSI Design

Автор: Bing Lu, Ding-Zhu Du, Sapatnekar S.
Название: Layout Optimization in VLSI Design
ISBN: 1402000898 ISBN-13(EAN): 9781402000898
Издательство: Springer
Рейтинг:
Цена: 15890 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The exponential scaling of feature sizes in semiconductor technologies has side-effects on layout optimization, related to effects such as interconnect delay, noise, crosstalk, signal integrity, parasitics effects, and power dissipation, that invalidate the assumptions that form the basis of previous design methodologies and tools. This book is intended to sample the most important, contemporary, and advanced layout optimization problems emerging with the advent of very deep submicron technologies in semiconductor processing. Audience: A reference work for graduate students, senior undergraduates, and researchers.

Statistical Analysis and Optimization for VLSI: Timing and Power

Автор: Srivastava Ashish, Sylvester Dennis, Blaauw David
Название: Statistical Analysis and Optimization for VLSI: Timing and Power
ISBN: 0387257381 ISBN-13(EAN): 9780387257389
Издательство: Springer
Рейтинг:
Цена: 15728 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Statistical Analysis and Optimization For VLSI: Timing and Power is a state-of-the-art book on the newly emerging field of statistical computer-aided design (CAD) tools. The very latest research in statistical timing and power analysis techniques is included, along with efforts to incorporate parametric yield as the key objective function during the design process. Included is the necessary mathematical background on techniques which find widespread use in current analysis and optimization. The emphasis is on algorithms, modeling approaches for process variability, and statistical techniques that are the cornerstone of the probabilistic CAD movement. The authors also describe recent optimization approaches to timing yield and contrast them to deterministic optimization. The work will enable new researchers in this area to come up to speed quickly, as well as provide a handy reference for those already working in CAD tool development.

Low-Voltage SOI CMOS VLSI Devices and Circuits

Автор: James B. Kuo
Название: Low-Voltage SOI CMOS VLSI Devices and Circuits
ISBN: 0471417777 ISBN-13(EAN): 9780471417774
Издательство: Wiley
Рейтинг:
Цена: 8830 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: A practical, comprehensive survey of SOI CMOS devices and circuits for microelectronics engineers The microelectronics industry is becoming increasingly dependent on SOI CMOS VLSI devices and circuits. This book is the first to address this important topic with a practical focus on devices and circuits. It provides an up-to-date survey of the current knowledge regarding SOI device behaviors and describes state-of-the-art low-voltage CMOS VLSI analog and digital circuit techniques. Low-Voltage SOI CMOS VLSI Devices and Circuits covers the entire field, from basic concepts to the most advanced ideas. Topics include: SOI device behavior: fundamental and floating body effects, hot carrier effects, sensitivity, reliability, self-heating, breakdown, ESD, dual-gate devices, accumulation-mode devices, short channel effects, and narrow channel effects Low-voltage SOI digital circuits: floating body effects, DRAM, SRAM, static logic, dynamic logic, gate array, CPU, frequency divider, and DSP Low-voltage SOI analog circuits: op amps, filters, ADC/DAC, sigma-delta modulators, RF circuits, VCO, mixers, low-noise amplifiers, and high-temperature circuits With over 300 references to the state of the art and over 300 important figures on low-voltage SOI CMOS devices and circuits, this volume serves as an authoritative, reliable resource for engineers designing these circuits in high-tech industries.


ООО "Логосфера " Тел:+7(495) 980-12-10 www.logobook.ru
   В Контакте  Мобильная версия