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Fundamentals of Modern VLSI Devices, Taur Yuan

Автор: Taur Yuan
Название:  Fundamentals of Modern VLSI Devices
Издательство: Cambridge Academ
Классификация:
Электронная техника

ISBN: 0521832942
ISBN-13(EAN): 9780521832946
ISBN: 0-521-83294-2
ISBN-13(EAN): 978-0-521-83294-6
Обложка/Формат: Hardback
Страницы: 680
Вес: 1.47 кг.
Дата издания: 01.09.2009
Язык: ENG
Издание: 2 rev ed
Иллюстрации: 83 exercises
Размер: 24.64 x 17.53 x 3.56 cm
Читательская аудитория: Tertiary education (us: college)
Ссылка на Издательство: Link
Рейтинг:
Поставляется из: Англии
Описание: Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.
Дополнительное описание: Physical constants and unit conversions; List of symbols; Preface to the second edition; Preface to the first edition; 1. Introduction; 2. Basic device physics; 3. MOSFET devices; 4. CMOS device design; 5. CMOS performance factors; 6. Bipolar devices; 7.


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  Новое издание
Fundamentals of Modern VLSI Devices

Автор: Taur
Название: Fundamentals of Modern VLSI Devices
ISBN: 1107635713 ISBN-13(EAN): 9781107635715
Издательство: Cambridge Academ
Цена: 3724 р.
Наличие на складе: Есть у поставщикаПоставка под заказ.
Описание: An updated edition of a classic, invaluable for both practical transistor design and teaching.

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  Старое издание
Fundamentals of Modern VLSI Devices

Автор: Taur
Название: Fundamentals of Modern VLSI Devices
ISBN: 0521559596 ISBN-13(EAN): 9780521559591
Издательство: Cambridge Academ
Цена: 2328 р.
Наличие на складе: Поставка под заказ.
Описание: This book examines in detail the basic properties and dign, including chip integration, of CMOS and bipolar VLSI devices and discusses the various factors that affect their performance. The authors begin with a thorough review of the relevant aspects of semiconductor physics, and proceed to a description of the design of CMOS and bipolar devices. The optimization of these devices for VLSI applications is also covered. The authors highlight the intricate interdependencies and subtle trade-offs between those device parameters, such as power consumption and packing density, that affect circuit performance and manufacturability. They also discuss in detail the scaling, and physical limits to the scaling, of CMOS and bipolar devices. The book contains many exercises, and can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices. It will also be a valuable reference volume for practising engineers involved in research and development in the electronics industry.

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Fundamentals of Modern VLSI Devices

Автор: Taur
Название: Fundamentals of Modern VLSI Devices
ISBN: 0521559596 ISBN-13(EAN): 9780521559591
Издательство: Cambridge Academ
Рейтинг:
Цена: 2328 р.
Наличие на складе: Поставка под заказ.

Описание: This book examines in detail the basic properties and dign, including chip integration, of CMOS and bipolar VLSI devices and discusses the various factors that affect their performance. The authors begin with a thorough review of the relevant aspects of semiconductor physics, and proceed to a description of the design of CMOS and bipolar devices. The optimization of these devices for VLSI applications is also covered. The authors highlight the intricate interdependencies and subtle trade-offs between those device parameters, such as power consumption and packing density, that affect circuit performance and manufacturability. They also discuss in detail the scaling, and physical limits to the scaling, of CMOS and bipolar devices. The book contains many exercises, and can be used as a textbook for senior undergraduate or first-year graduate courses on microelectronics or VLSI devices. It will also be a valuable reference volume for practising engineers involved in research and development in the electronics industry.

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Fundamentals of Modern VLSI Devices

Автор: Taur
Название: Fundamentals of Modern VLSI Devices
ISBN: 1107635713 ISBN-13(EAN): 9781107635715
Издательство: Cambridge Academ
Рейтинг:
Цена: 3724 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: An updated edition of a classic, invaluable for both practical transistor design and teaching.

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Sputtering Materials for VLSI and Thin Film Devices,

Автор: Jaydeep Sarkar
Название: Sputtering Materials for VLSI and Thin Film Devices,
ISBN: 0815515936 ISBN-13(EAN): 9780815515937
Издательство: Elsevier Science
Рейтинг:
Цена: 13640 р.
Наличие на складе: Поставка под заказ.

Описание: Reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall productivity of various processes.

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Low-Voltage SOI CMOS VLSI Devices and Circuits

Автор: James B. Kuo
Название: Low-Voltage SOI CMOS VLSI Devices and Circuits
ISBN: 0471417777 ISBN-13(EAN): 9780471417774
Издательство: Wiley
Рейтинг:
Цена: 7901 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: A practical, comprehensive survey of SOI CMOS devices and circuits for microelectronics engineers The microelectronics industry is becoming increasingly dependent on SOI CMOS VLSI devices and circuits. This book is the first to address this important topic with a practical focus on devices and circuits. It provides an up-to-date survey of the current knowledge regarding SOI device behaviors and describes state-of-the-art low-voltage CMOS VLSI analog and digital circuit techniques. Low-Voltage SOI CMOS VLSI Devices and Circuits covers the entire field, from basic concepts to the most advanced ideas. Topics include: SOI device behavior: fundamental and floating body effects, hot carrier effects, sensitivity, reliability, self-heating, breakdown, ESD, dual-gate devices, accumulation-mode devices, short channel effects, and narrow channel effects Low-voltage SOI digital circuits: floating body effects, DRAM, SRAM, static logic, dynamic logic, gate array, CPU, frequency divider, and DSP Low-voltage SOI analog circuits: op amps, filters, ADC/DAC, sigma-delta modulators, RF circuits, VCO, mixers, low-noise amplifiers, and high-temperature circuits With over 300 references to the state of the art and over 300 important figures on low-voltage SOI CMOS devices and circuits, this volume serves as an authoritative, reliable resource for engineers designing these circuits in high-tech industries.

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Managing Power Electronics: VLSI and DSP-Driven Computer Systems

Автор: Nazzareno Rossetti
Название: Managing Power Electronics: VLSI and DSP-Driven Computer Systems
ISBN: 047170959X ISBN-13(EAN): 9780471709596
Издательство: Wiley
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Цена: 11688 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: A unique system focus that presents specific solutions for specific appliances
This publication presents state-of-the-art power management techniques for modern electronic appliances that rely on such very large-scale integration (VLSI) chips as CPUs and DSPs. The author thoroughly covers all aspects of the field, including semiconductor manufacturing processes, packages, circuits, functions, and systems. A unique and significant contribution to the field, the publication adopts a "system focus" by first presenting the appliance and then delving into the power management architecture and topologies that best serve each appliance.
In addition to specific techniques and applications, the publication discusses fundamental physical and socioeconomic issues. For example, the author examines Moore's law and its effect on power management and heat dissipation, which points to a future breakthrough needed to continue the fast pace of advancement in the high-tech industry.
The author provides a solid technical foundation and an analysis of popular electronic appliances, including:
*Overview of the semiconductor industry
*Plain-English discussion of semiconductor processes and packages
*Step-by-step guide to analog design building from the transistor to higher-level functions, leading to the implementation of a complete voltage regulator
*Popular DC-DC voltage regulation architectures
*AC-DC architectures for power conversion
*Ultra-portable devices, such as cellular phones, PDAs, and digital still cameras
*Desktop and notebook PCs
The publication concludes with a chapter on special power management topics andexpert forecast of future directions for the field. This is essential reading for researchers, engineers, and designers in the semiconductor and integrated circuits industries. With its extensive use of cross-section drawings as well as transistor circuit schematics, this is also a recommended textbook for advanced undergraduate and graduate courses in computer science and electrical engineering.

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VLSI Memory Chip Design

Автор: Itoh
Название: VLSI Memory Chip Design
ISBN: 3540678204 ISBN-13(EAN): 9783540678205
Издательство: Springer
Рейтинг:
Цена: 18093 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This book features a systematic description of microelectronic device design ranging from the basics to current topics, such as low-power/ultralow-voltage designs including subthreshold current reduction, memory subsystem designs for modern DRAMs and various on-chip supply-voltage conversion techniques. It also covers process and device issues as well as design issues relating to systems, circuits, devices and processes, such as signal-to-noise and redundancy.

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Vlsi Technology

Автор: Chang
Название: Vlsi Technology
ISBN: 0071141057 ISBN-13(EAN): 9780071141055
Издательство: McGraw-Hill
Цена: 3215 р.
Наличие на складе: Поставка под заказ.

Описание: Presents topics useful for the next generation of USLI technologies, allowing more transistors to be packaged on a single chip. This book contains contributions from industry experts, specializing in topics such as epitaxy with low temperature process, rapid thermal processes, low damage plasma reactive ion etching, and fine line lithography.

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VLSI-Design of Non-Volatile Memories

Автор: Campardo
Название: VLSI-Design of Non-Volatile Memories
ISBN: 354020198X ISBN-13(EAN): 9783540201984
Издательство: Springer
Рейтинг:
Цена: 18093 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: VLSI-Design for Non-Volatile Memories is intended for electrical engineers and graduate students who want to enter into the integrated circuit design world. Non-volatile memories are treated as an example to explain general design concepts. Practical illustrative examples of non-volatile memories, including flash types, are showcased to give insightful examples of the discussed design approaches. A collection of photos is included to make the reader familiar with silicon aspects. Throughout all parts of this book, the authors have taken a practical and applications-driven point of view, providing a comprehensive and easily understood approach to all the concepts discussed. Giovanni Campardo and Rino Micheloni have a solid track record of leading design activities at the STMicroelectronics Flash Division. David Novosel is President and founder of Intelligent Micro Design, Inc., Pittsburg, PA.

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VLSI Test Principles and Architectures,

Автор: Laung-Terng Wang
Название: VLSI Test Principles and Architectures,
ISBN: 0123705975 ISBN-13(EAN): 9780123705976
Издательство: Elsevier Science
Рейтинг:
Цена: 6068 р.
Наличие на складе: Поставка под заказ.

Описание: A comprehensive guide to DFT methods that shows the readers how to design a testable and quality product, drive down test cost, improve product quality and yield, and speed up time-to-market and time-to-volume. It provides coverage of design for testability. It presents coverage of industry practices commonly found in commercial DFT tools.

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High Dielectric Constant Materials / VLSI MOSFET Applications

Автор: Huff H.R., Gilmer D.C.
Название: High Dielectric Constant Materials / VLSI MOSFET Applications
ISBN: 3540210814 ISBN-13(EAN): 9783540210818
Издательство: Springer
Рейтинг:
Цена: 30712 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The Economic Implications of Moore's Law.- Brief Notes on the History of Gate Dielectrics in MOS Devices.- SiO2-Base MOSFETS: Film Growth and Si-SiO2-Interface Properties.- Oxide Reliability Issues.- Gate Dielectric Scaling to 2.0-1.0 nm: SiO2 and Silicon Oxynitride.- Optimal Scaling Methodologies and Transistor Performance Utilizing SiO2/Silicon Oxynitride.- Silicon Oxynitride Gate Dielectric for Reducing Gate Leakage and Boron Penetration Prior to High-K Gate Dielectric Implementation.- Alternative Dielectrics for Silicon-Based Transistors: Selection via Multiple Criteria.- Materials Issues for High-K Gate Dielectric Selection and Integration.- Designing Interface Composition and Structure in High Dielectric Constant Gate Stacks.- Electronic Structure of Alternative High-K Dielectrics.- Physicochemical Properties of Selected 4d, 5d, and Rare-Earth Metals in Silicon.- High-K Gate Dielectric Deposition Technologies.- Issues in Metal Gate Electrode Selection for Bulk CMOS Devices.- CMOS IC Fabrication Issues for High-K Gate Dielectric and Alternate Electrode Materials.- Characterization and Metrology of Medium Dielectric Constant Gate Dielectric Films.- Electrical Measurement Issues for Alternative Gate Stack Systems.- High-K Gate Dielectric Materials Integrated Circuit Device Design Issues.- High-K Crystalline Gate Dielectrics: A Research Perspective.- High-K Crystalline Gate Dielectrics: An IC Manufacturer's Perspective.- Advanced MOS-Devices.

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Silicon-on-Insulator Technology / Materials to VLSI

Автор: Colinge J.-P.
Название: Silicon-on-Insulator Technology / Materials to VLSI
ISBN: 1402077734 ISBN-13(EAN): 9781402077739
Издательство: Springer
Рейтинг:
Цена: 16448 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years during which SOI Technology has little by little proven it could outperform bulk silicon in every possible way. The turn of the century turned out to be a milestone for the semiconductor industry, as high-quality SOI wafers suddenly became available in large quantities. From then on, it took only a few years to witness the use of SOI technology in a wealth of applications ranging from audio amplifiers and wristwatches to 64-bit microprocessors. This book presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, also describes the properties of other SOI devices, such as multiple gate MOSFETs, dynamic threshold devices and power MOSFETs. The advantages and performance of SOI circuits used in both niche and mainstream applications are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition is recommended for use as a textbook for classes on semiconductor device processing and physics at the graduate level.

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Intellectual Property Protection in VLSI Design / Theory and Practice

Автор: Gang Qu, Potkonjak Miodrag
Название: Intellectual Property Protection in VLSI Design / Theory and Practice
ISBN: 1402073208 ISBN-13(EAN): 9781402073205
Издательство: Springer
Цена: 13196 р.
Наличие на складе: Нет в наличии.

Описание: The development and implementation of intellectual property (IP) protection mechanisms is of crucial importance for the emerging reuse-based system design methodology. Maybe even more importantly, it is such an elegant scientific and engineering challenge that it has drawn a lot of attention from academia and industry in recent years.Intellectual Property Protection in VLSI Designs: Theory and Practice contains the mathematical foundations for the developed IP protection paradigm, detailed pseudo-code and descriptions of its many techniques, numerous examples and experimental validation on well-known benchmarks, and clear explanations and comparisons of the many protection methods.

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