Автор: Gopalakrishnan Prakash, Rutenbar Rob A.
Название: Direct Transistor-Level Layout for Digital Blocks
ISBN: 1402076657 ISBN-13(EAN): 9781402076657
Издательство: Springer
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Цена: 11513 р.
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Описание: Cell-based design methodologies have dominated layout generation of digital circuits. Unfortunately, the growing demands for transparent process portability, increased performance, and low-level device sizing for timing/power are poorly handled in a fixed cell library. Direct Transistor-Level Layout For Digital Blocks proposes a direct transistor-level layout approach for small blocks of custom digital logic as an alternative that better accommodates demands for device-level flexibility. This approach captures essential shape-level optimizations, yet scales easily to netlists with thousands of devices, and incorporates timing optimization during layout. The key idea is early identification of essential diffusion-merged MOS device groups, and their preservation in an uncommitted geometric form until the very end of detailed placement. Roughly speaking, essential groups are extracted early from the transistor-level netlist, placed globally, optimized locally, and then finally committed each to a specific shape-level form while concurrently optimizing for both density and routability. The essential flaw in prior efforts is an over-reliance on geometric assumptions from large-scale cell-based layout algorithms. Individual transistors may seem simple, but they do not pack as gates do. Algorithms that ignore these shape-level issues suffer the consequences when thousands of devices are poorly packed. The approach described in this book can pack devices much more densely than a typical cell-based layout.Direct Transistor-Level Layout For Digital Blocks is a comprehensive reference work on device-level layout optimization, which will be valuable to CAD tool and circuit designers.

Автор: Park
Название: Ferroelectric-Gate Field Effect Transistor Memories
ISBN: 9402408398 ISBN-13(EAN): 9789402408393
Издательство: Springer
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Цена: 13158 р.
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Описание: This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time.This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics.The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Автор: John Linsley Hood
Название: Valve and Transistor Audio Amplifiers,
ISBN: 0750633565 ISBN-13(EAN): 9780750633567
Издательство: Elsevier Science
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Цена: 5892 р.
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Описание: The audio amplifier is at the heart of audio design. Its performance determines largely the performance of any audio system. This work describes the milestones that have marked the development of audio amplifiers since the earliest days to the modern systems.

Автор: Grebennikov
Название: RF and Microwave Transistor Oscillator Design
ISBN: 0470025352 ISBN-13(EAN): 9780470025352
Издательство: Wiley
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Цена: 10659 р.
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Описание: This book begins with an analysis of non-linear circuit design methods including spectral-domain analysis, time-domain analysis and the quasilinear method.  It then moves on to discuss the operation and design principles of oscillators, including a section on the historical aspects of oscillator configurations.  The stability of oscillators is next examined with discussions on the stability of multi-resonant circuits, the phase plane method and start-up and stability.  Following this, the optimum design and circuit techniques are addressed, beginning with the empirical and analytic optimum design approaches, and moving on to the high-efficiency design technique. The next few chapters examine noise in oscillators including chapters on varactor and oscillator frequency tuning, CMOS voltage-controlled oscillators and wideband voltage-controlled oscillators.  The book concludes with a chapter evaluating noise reduction techniques such as resonant circuit design technique, filtering technique and noise-shifting technique.

Автор: Kurt Hoffmann
Название: System Integration: From Transistor Design to Large Scale Integrated Circuits
ISBN: 0470854073 ISBN-13(EAN): 9780470854075
Издательство: Wiley
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Цена: 10940 р.
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Описание: The development of large scale integrated systems on a chip has had a dramatic effect on circuit design methodology. This book provides readers with the methodology by which simple equations for the estimation of transistor geometries and circuit behaviour can be deduced.

Автор: Vinod Kumar Khanna
Название: Insulated Gate Bipolar Transistor IGBT Theory and Design
ISBN: 0471238457 ISBN-13(EAN): 9780471238454
Издательство: Wiley
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Цена: 14773 р.
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Описание: A comprehensive and "state-of-the-art" coverage of the design and fabricatiof IGBT.
* All-in-one resource
* Explains the fundamentals of MOS and bipolar physics.
* Covers IGBT operation, device and process design, power modules, and new IGBT structures.

Автор: S W Amos
Название: Principles of Transistor Circuits,
ISBN: 0750644273 ISBN-13(EAN): 9780750644273
Издательство: Elsevier Science
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Цена: 5364 р.
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Описание: Covers the developments in technology and applications of transistor circuit design, including computer circuit simulation, and such topics as thyristors, Darlington transistors, amplifiers, ring modulators, power supplies, optoelectronics and logic circuits. This book offers a step-by-step introduction to the subject, suitable for novices.

Автор: Wu Keng C.
Название: Transistor Circuits for Spacecraft Power System
ISBN: 1402072619 ISBN-13(EAN): 9781402072611
Издательство: Springer
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Цена: 14802 р.
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Описание: As a stand-alone volume, Transistor Circuits For Spacecraft Power System presents numerous transistor circuits and building blocks associated with power electronics in general, and examines the major subsystem components for solar-based spacecraft power systems. The technique and concept, of "continuity of states" for nonlinear circuits handling power transfer under cyclic excitation is introduced in Part I and further developed throughout the book. This powerful technique employing matrix formulation bypasses eigen-transients and yields steady-state responses rapidly. Closed-loop treatments are also given for large-scale linear circuits, many closed-form solutions for control loop-gain, conducted susceptibility, output impedance, etc. are covered. Extensive mathematical procedures are retained to highlight the importance of analytical flows.The author also reviews the evolution of solar-based spacecraft power systems; introduces modes of operations: discharge (boost), shunt, and charge; and covers pulse-width-modulated (PWM) boost power converter for both DC and AC conditions. A configuration tree for shunt mode operation is conceived. Based on the configuration tree, the best topologies, sequential PWM shunt and ripple-regulated free-running shunt, are intensively examined and formulated.Transistor Circuits For Spacecraft Power System provides important information for understanding the relationship between earthbound semiconductor circuits and space borne vehicles.

Автор: Grabinski
Название: Transistor Level Modeling for Analog/RF IC Design
ISBN: 1402045557 ISBN-13(EAN): 9781402045554
Издательство: Springer
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Цена: 11513 р.
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Описание: The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The first chapter lays out the 2/3D process and device simulations as an effective tool for a better understanding of the internal behavior of semiconductor structures and this with a focus on high-voltage MOSFET devices. Subsequently, the mainstream developments of both the PSP and the EKV models are discussed in detail.

These physics-based MOSFET models are compared to the measurement-based models which are frequently used in RF applications. The comparison includes an overview of the relevant empirical models and measurement techniques. The following chapters include SOI-specific aspects, modeling enhancement of small geometry MOSFET devices and a survey of quantum effects in devices and circuits.

Finally, an explanation of hardware description languages such as VHDL-AMS and Verilog-A is offered and shows the possibilities of the practical implementation and standardization of the different modeling methodologies found in the preceding chapters. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization.

The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.

Автор: Ritchie, G.j.
Название: Transistor circuit techniques
ISBN: 0748740759 ISBN-13(EAN): 9780748740758
Издательство: Taylor&Francis
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Цена: 3365 р.
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Описание: One of a series intended for first- and second-year undergraduate courses, this text provides coverage of the design of both discrete and integrated electronic circuits. It guides students through the analysis and design of transistor circuits, using worked examples and design examples.

Название: Planar double-gate transistor
ISBN: 1402093276 ISBN-13(EAN): 9781402093272
Издательство: Springer
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Цена: 13639 р.
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Описание: Deals with the topic of Double-Gates devices and circuit. This book aims to reinforce the synergy between the research activities on CMOS sub-32nm devices and the design of elementary cells. It shows how we can take advantage of transistor structures to come up with basic cells and concepts that exploit the electrical features of these devices.

Автор: Rudolph
Название: Nonlinear Transistor Model Parameter Extraction Techniques
ISBN: 0521762103 ISBN-13(EAN): 9780521762106
Издательство: Cambridge Academ
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Цена: 9126 р.
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Описание: Achieve accurate and reliable parameter extraction using a broad range of techniques and models provided.