Автор: Pelant, Ivan; Valenta, Jan Название: Luminescence Spectroscopy of Semiconductors ISBN: 0199588333 ISBN-13(EAN): 9780199588336 Издательство: Oxford Academ Рейтинг: Цена: 12367 р. Наличие на складе: Поставка под заказ.
Описание: This book reviews up-to-date ideas of how the luminescence radiation in semiconductors originates and how to analyze it experimentally. The book fills a gap between general textbooks on optical properties of solids and specialized monographs on luminescence. It is unique in its coherent treatment of the phenomenon of luminescence from the very introductory definitions, from light emission in bulk crystalline and amorphous materials to the advanced chapters that deal with semiconductor nano objects, including spectroscopy of individual nanocrystals. The theory of radiative recombination channels in semiconductors is considered on a level of intuitive physical understanding rather than rigorous quantum mechanical treatment.
Автор: Kalt Heinz, Hetterich Michael Название: Optics of Semiconductors and Their Nanostructures ISBN: 3540220682 ISBN-13(EAN): 9783540220688 Издательство: Springer Рейтинг: Цена: 19532 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: In recent years the field of semiconductor optics has been pushed to several extremes. The size of semiconductor structures has shrunk to dimensions of a few nanometers, the semiconductor-light interaction is studied on timescales as fast as a few femtoseconds, and transport properties on a length scale far below the wavelength of light have been revealed. These advances were driven by rapid improvements in both semiconductor and optical technologies and were further facilitated by progress in the theoretical description of optical excitations in semiconductors. This book, written by leading experts in the field, provides an up-to-date introduction to the optics of semiconductors and their nanostructures so as to help the reader understand these exciting new developments. It also discusses recently established applications, such as blue-light emitters, as well as the quest for future applications in areas such as spintronics, quantum information processing, and third-generation solar cells.
Описание: Brand new resrch! The sequel to last year's runaway bestseller in this hot new field focuses on the rapid progress that has been made in the following areas of physical chemistry: theory, new materials, surfaces and interfaces, and processing. More than 100 scientists from major research groups have contributed to this timely volume, on this second anniversary of the discovery of these remarkable materials. This research was presented at the ACS National Meeting in Los Angeles in September 1988.
Описание: An international team of experts describes the optical and electronic properties of semiconductors and semiconductor nanostructures at picosecond and femtosecond time scales. The contributions cover the latest research on a wide range of topics. In particular they include novel experimental techniques for studying and characterizing nanostructure materials. The contributions are written in a tutorial way so that not only researchers in the field but also researchers and graduate students outside the field can benefit.
Описание: The study of kinetic equations related to gases, semiconductors, photons, traffic flow, and other systems has developed rapidly in recent years because of its role as a mathematical tool in many applications in areas such as engineering, meteorology, biology, chemistry, materials science, nanotechnology, and pharmacy. Written by leading specialists in their respective fields, this book presents an overview of recent developments in the field of mathematical kinetic theory with a focus on modeling complex systems, emphasizing both mathematical properties and their physical meaning. The overall presentation covers not only modeling aspects and qualitative analysis of mathematical problems, but also inverse problems, which lead to a detailed assessment of models in connection with their applications, and to computational problems, which lead to an effective link of models to the analysis of real-world systems. The book is divided into three parts: Part I presents fundamental aspects of the Boltzmann equation; Part II deals with the modeling of semiconductor devices as well as related applications and computational topics; Part III covers a variety of applications in physics and the natural sciences, offering a range of very different conceivable developments of mathematical kinetic theory. The study of kinetic equations related to gases, semiconductors, photons, traffic flow, and other systems has developed rapidly in recent years because of its role as a mathematical tool in areas such as engineering, meteorology, biology, chemistry, materials science, nanotechnology, and pharmacy. Written by leading specialists in their respective fields, this book presents an overview of recent developments in the field of mathematical kinetic theory with a focus on modeling complex systems, emphasizing both mathematical properties and their physical meaning.
Описание: Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. This volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field.
Описание: Presents the basic elements to understand and research into semiconductor physics. This work deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. It covers fundamentals of optical bistability, semiconductor lasers, femtosecond excitation and the optical Stark effect.
Автор: Phillips Название: Bonds and Bands in Semiconductors ISBN: 160650133X ISBN-13(EAN): 9781606501337 Издательство: McGraw-Hill Рейтинг: Цена: 8661 р. Наличие на складе: Поставка под заказ.
Описание: A work on the basic chemistry and solid state physics of semiconducting materials that is updated with chapters on crystalline and amorphous semiconductors. It offers a treatment for the learning and understanding of what makes perhaps the world`s most important engineered materials actually work.
Описание: Deals with the Einstein relation in compound semiconductors and their nanostructures. This book considers materials such as nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, and inversion layers.
Описание: A practical guide to the analysis of materials, including a description of the underlying theories and instrumental aberrations caused by real experiments. The
main emphasis concerns the analysis of thin films and multilayers, primarily semiconductors, although the techniques are very general. Semiconductors can be very perfect composite
crystals and therefore their study can lead to the largest volume of information, since X-ray scattering can assess the deviation from perfection.
The description is intentionally
conceptual so that the reader can grasp the real processes involved. In this way the analysis should become significantly easier, making the reader aware of misleading artifacts and
assisting in the determination of a more complete and reliable analysis. The theory of scattering is very important and is covered in such a way that the assumptions are clear.
Greatest emphasis is placed on the dynamical diffraction theory including developments extending its applicability to reciprocal space mapping and modelling samples with relaxed and
distorted interfaces. A practical guide to the measurement of diffraction patterns, including the smearing effects introduced to the measurement, is also presented.
Автор: D. B. Holt Название: Extended Defects in Semiconductors ISBN: 0521819342 ISBN-13(EAN): 9780521819343 Издательство: Cambridge Academ Рейтинг: Цена: 14380 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The elucidation of the effects of structurally extended defects on electronic properties of materials is especially important in view of the current advances in electronic device development that involve defect control and engineering at the nanometer level. This book surveys the properties, effects, roles and characterization of extended defects in semiconductors. The basic properties of extended defects (dislocations, stacking faults, grain boundaries, and precipitates) are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. These topics are among the central issues in the investigation and applications of semiconductors and in the operation of semiconductor devices. The authors preface their treatment with an introduction to semiconductor materials and conclude with a chapter on point defect maldistributions. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Автор: Yu Название: Fundamentals of semiconductors ISBN: 3642007090 ISBN-13(EAN): 9783642007095 Издательство: Springer Рейтинг: Цена: 7836 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This fourth edition of the well-established Fundamentals of Semiconductors serves to fill the gap between a general solid-state physics textbook and research articles by providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. The approach is physical and intuitive rather than formal and pedantic. Theories are presented to explain experimental results. This textbook has been written with both students and researchers in mind. Its emphasis is on understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors. The explanations are based on physical insights. Each chapter is enriched by an extensive collection of tables of material parameters, figures, and problems. Many of these problems "lead the student by the hand" to arrive at the results. The major changes made in the fourth edition include: an extensive appendix about the important and by now well-established deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters. Some of the solutions contain extensions via discussions about topics of current interest in the field of semiconductor physics, such as spin-orbit coupling and k-linear band dispersion.
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