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Hot-Carrier Effects in MOS Devices,, Eiji Takeda



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Цена: 5742р.
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Автор: Eiji Takeda
Название:  Hot-Carrier Effects in MOS Devices,
Издательство: Elsevier Science
Классификация:
Электронная техника

ISBN: 0126822409
ISBN-13(EAN): 9780126822403
ISBN: 0-12-682240-9
ISBN-13(EAN): 978-0-12-682240-3
Обложка/Формат: Hardback
Страницы: 312
Вес: 0.648 кг.
Дата издания: 28.11.1995
Серия: Eng Electronics
Язык: English
Иллюстрации: Illustrations, index
Размер: 235 x 156 x 27
Читательская аудитория: Professional & vocational
Ссылка на Издательство: Link
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Поставляется из: Англии
Описание: The exploding number of uses for ultra fast, ultra small integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. This work encompasses the research and discoveries made in the fast-paced area of hot carriers, and also includes the basics of MOS devices.



Carrier Transport in Nanoscale MOS Transistors

Автор: Tsuchiya Hideaki
Название: Carrier Transport in Nanoscale MOS Transistors
ISBN: 1118871669 ISBN-13(EAN): 9781118871669
Издательство: Wiley
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Цена: 11550 р.
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Описание: A comprehensive advanced level examination of the transport theory of nanoscale devices

  • Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport
  • Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations
  • The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds
Fundamentals of Carrier Transport

Автор: Lundstrom
Название: Fundamentals of Carrier Transport
ISBN: 0521637244 ISBN-13(EAN): 9780521637244
Издательство: Cambridge Academ
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Цена: 8052 р.
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Описание: An accessible introduction to the behaviour of charged carriers in semiconductors and semiconductor devices.

Nonequilibrium Carrier Dynamics in Semiconductors / Proceedings of the 14th International Conference, July 25-29, 2005, Chicago, USA

Автор: Saraniti Marco, Ravaioli Umberto
Название: Nonequilibrium Carrier Dynamics in Semiconductors / Proceedings of the 14th International Conference, July 25-29, 2005, Chicago, USA
ISBN: 3540365877 ISBN-13(EAN): 9783540365877
Издательство: Springer
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Цена: 27345 р.
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Описание: "Nonequilibrium Carrier Dynamics in Semiconductors" is a well-established, specialist conference, held every 2 years, covering a range of topics of current interest to R&D in semiconductor physics/materials, optoelectronics, nanotechnology, quantum information processing. Papers accepted for publication are selected and peer-reviewed by members of the Program Committee during the conference to ensure both rapid and high-quality processing.

Nonequilibrium Carrier Dynamics in Semiconductors

Автор: Marco Saraniti; Umberto Ravaioli
Название: Nonequilibrium Carrier Dynamics in Semiconductors
ISBN: 3642071694 ISBN-13(EAN): 9783642071690
Издательство: Springer
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Цена: 27345 р.
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Описание: "Nonequilibrium Carrier Dynamics in Semiconductors" is a well-established, specialist conference, held every two years, covering a range of topics of current interest to R&D in semiconductor physics/materials, optoelectronics, nanotechnology, quantum information processing.

Rare-Earth Implanted MOS Devices for Silicon Photonics

Автор: Lars Rebohle; Wolfgang Skorupa
Название: Rare-Earth Implanted MOS Devices for Silicon Photonics
ISBN: 3642265588 ISBN-13(EAN): 9783642265587
Издательство: Springer
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Цена: 13584 р.
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Описание: The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications.

Hot-Carrier Reliability of MOS VLSI Circuits

Автор: Leblebici
Название: Hot-Carrier Reliability of MOS VLSI Circuits
ISBN: 079239352X ISBN-13(EAN): 9780792393528
Издательство: Springer
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Цена: 22461 р.
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Описание: Addresses the issues related to hot-carrier reliability of MOS VLSI circuits.This book is primarily for use by engineers and scientists who study device and circuit-level reliability in VLSI systems and develop practical reliability measures and models.

Multi-Carrier Spread-Spectrum / For Future Generations Wireless Systems

Автор: Fazel K., Kaiser S.
Название: Multi-Carrier Spread-Spectrum / For Future Generations Wireless Systems
ISBN: 1402018371 ISBN-13(EAN): 9781402018374
Издательство: Springer
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Цена: 29156 р.
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Описание: The benefits and success of multi-carrier (MC) modulation on one side and the flexibility offered by the spread spectrum (SS) technique on the other side have motivated many researchers to investigate the combination of both techniques since 1993. This combination known as multi-carrier spread spectrum (MC-SS) benefits from the advantages of both systems and offers high flexibility, high spectral efficiency, simple detection strategies, narrow-band interference rejection capability, etc. The basic principle of this combination is straightforward: The spreading is performed as direct sequence spread spectrum (DS-SS) but instead of transmitting the chips over a single carrier, several sub-carriers are employed. The MC modulation and demodulation can easily be realized in the digital domain by performing IFFT and FFT operations. The separation of the users' signals can be performed in the code domain. MC-SS systems can perform the spreading in frequency direction, which allows for simple signal detection strategies. Since 1993, MC-SS has been deeply studied and new alternative solutions have been proposed. Meanwhile, deep system analysis and comparison with DS-CDMA have been performed that show the superiority of MC-CDMA. The aim of this book is to edit the ensemble of the newest contributions and research results in this new field that have been presented during the 4th International Workshop on Multi-Carrier Spread-Spectrum (MC-SS 2003), held in Oberpfaffenhofen, Germany.

Multi-Carrier Spread-Spectrum & Related Topics

Автор: Fazel K., Kaiser S.
Название: Multi-Carrier Spread-Spectrum & Related Topics
ISBN: 0792376536 ISBN-13(EAN): 9780792376538
Издательство: Springer
Цена: 10445 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The benefits and success of multi-carrier (MC) modulation on one side and the flexibility offered by the spread spectrum (SS) technique on the other side has motivated many researchers to investigate the combination of both techniques since 1993. This combination, known as multi-carrier spread-spectrum (MC-SS), benefits from the main advantages of both systems and offers high flexibility, high spectral efficiency, simple detection strategies, narrow-band interference rejection capability, etc.. The basic principle of this combination is straightforward: The spreading is performed as direct sequence spread-spectrum (DS-SS) but instead of transmitting the chips over a single carrier, several sub-carriers could be employed. The MC modulation and demodulation can easily be realized in the digital domain by performing IFFT and FFT operations. The separation of the users' signals could be performed in the code domain. This means that the MC-SS system performs the spreading in the frequency domain, which allows for simple signal detection strategies. Since 1993, MCSS has been deeply studied and new alternative solutions have been proposed. Meanwhile, deep system analysis and comparison with DS-CDMA have been performed that show the superiority of MC-CDMA. The aim of Multi-Carrier Spread-Spectrum & Related Topics is to edit the ensemble of the newest contributions and research results in this new field that will be presented during three days at the Third International Workshop on Multi-Carrier Spread-Spectrum (MC-SS) & Related Topics, held in Oberpfaffenhofen, Germany.

Multi-Carrier Spread-Spectrum / Proceedings from the 5th International Workshop, Oberpfaffenhofen, Germany, September 14-16, 2005

Автор: Fazel Khaled, Kaiser Stefan
Название: Multi-Carrier Spread-Spectrum / Proceedings from the 5th International Workshop, Oberpfaffenhofen, Germany, September 14-16, 2005
ISBN: 1402044356 ISBN-13(EAN): 9781402044359
Издательство: Springer
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Цена: 21841 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The benefits and success of multi-carrier (MC) modulation on one side and the flexibility offered by the spread spectrum (SS) technique on the other side have motivated many researchers to investigate the combination of both techniques since 1993. This combination known as multi-carrier spread spectrum (MC-SS) benefits from the advantages of both systems and offers high flexibility, high spectral efficiency, simple detection strategies, narrow-band interference rejection capability, etc. The basic principle of this combination is straightforward: The spreading is performed as direct sequence spread spectrum (DS-SS) but instead of transmitting the chips over a single carrier, several sub-carriers are employed. The MC modulation and demodulation can easily be realized in the digital domain by performing IFFT and FFT operations. The separation of the users’ signals can be performed in the code domain. MC-SS systems can perform the spreading in frequency direction, which allows for simple signal detection strategies. Since 1993, MC-SS has been deeply studied and new alternative solutions have been proposed. Meanwhile, deep system analysis and comparison with DS-CDMA have been performed that show the superiority of MC-CDMA. The aim of Multi-Carrier Spread-Spectrum is to edit the ensemble of the newest contributions and research results in this new field that have been presented during the 5th International Workshop on Multi-Carrier Spread-Spectrum (MC-SS 2005), held in Oberpfaffenhofen, Germany.

Low-Frequency Noise in Advanced MOS Devices

Автор: Haartman Martin v., Г–stling Mikael
Название: Low-Frequency Noise in Advanced MOS Devices
ISBN: 1402059094 ISBN-13(EAN): 9781402059094
Издательство: Springer
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Цена: 16602 р.
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Описание: Low-Frequency Noise in Advanced CMOS Devices begins with an introduction to noise, describing the fundamental noise sources and basic circuit analysis. The characterization of low-frequency noise is discussed in detail and useful practical advice is given. The various theoretical and compact low-frequency (1/f) noise models in MOS transistors are treated extensively providing an in-depth understanding of the low-frequency noise mechanisms and the potential sources of the noise in MOS transistors. Advanced CMOS technology including nanometer scaled devices, strained Si, SiGe, SOI, high-k gate dielectrics, multiple gates and metal gates are discussed from a low-frequency noise point of view. Some of the most recent publications and conference presentations are included in order to give the very latest view on the topics. The book ends with an introduction to noise in analog/RF circuits and describes how the low-frequency noise can affect these circuits.

The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

Автор: Li
Название: The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
ISBN: 366249681X ISBN-13(EAN): 9783662496817
Издательство: Springer
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Цена: 8359 р.
Наличие на складе: Поставка под заказ.

Описание: This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600? and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8?10?7?•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.

MOS Devices for Low-Voltage and Low-Energy Applications

Автор: Omura
Название: MOS Devices for Low-Voltage and Low-Energy Applications
ISBN: 1119107350 ISBN-13(EAN): 9781119107354
Издательство: Wiley
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Цена: 12705 р.
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Описание: Helps readers understand the physics behind MOS devices for low-voltage and low-energy applications

- Based on timely published and unpublished work written by expert authors
- Discusses various promising MOS devices applicable to low-energy environmental and biomedical uses
- Describes the physical effects (quantum, tunneling) of MOS devices
- Demonstrates the performance of devices, helping readers to choose right devices applicable to an industrial or consumer environment
- Addresses some Ge-based devices and other compound-material-based devices for high-frequency applications and future development of high performance devices.

'Seemingly innocuous everyday devices such as smartphones, tablets and services such as on-line gaming or internet keyword searches consume vast amounts of energy. Even when in standby mode, all these devices consume energy. The upcoming "Internet of Things" (IoT) is expected to deploy 60 billion electronic devices spread out in our homes, cars and cities.

Britain is already consuming up to 16 per cent of all its power through internet use and this rate is doubling every four years. According to The UK's Daily Mail May (2015), if usage rates continue, all of Britain's power supply could be consumed by internet use in just 20 years. In 2013, U.S. data centers consumed an estimated 91 billion kilowatt-hours of electricity, corresponding to the power generated by seventeen 1000-megawatt nuclear power plants. Data center electricity consumption is projected to increase to roughly 140 billion kilowatt-hours annually by 2020, the equivalent annual output of 50 nuclear power plants. (Natural Resources Defense Council, USA, Feb. 2015)

All these examples stress the urgent need for developing electronic devices that consume as little energy as possible. The book "MOS Devices for Low-Voltage and Low-Energy Applications" explores the different transistor options that can be utilized to achieve that goal. It describes in detail the physics and performance of transistors that can be operated at low voltage and consume little power, such as subthreshold operation in bulk transistors, fully depleted SOI devices, tunnel FETs, multigate and gate-all-around MOSFETs. Examples of low-energy circuits making use of these devices are given as well.

The book "MOS Devices for Low-Voltage and Low-Energy Applications" is a good reference for graduate students, researchers, semiconductor and electrical engineers who will design the electronic systems of tomorrow.'

--- Dr. Jean-Pierre Colinge, Taiwan Semiconductor Manufacturing Company (TSMC)

"The authors present a creative way to show how different MOS devices can be used for low-voltage and low-power applications. They start with Bulk MOSFET, following with SOI MOSFET, FinFET, gate-all-around MOSFET, Tunnel-FET and others. It is presented the physics behind the devices, models, simulations, experimental results and applications. This book is interesting for researchers, graduate and undergraduate students. The low-energy field is an important topic for integrated circuits in the future and none can stay out of this."

--- Prof. Joao A. Martino, University of Sao Paulo, Brazil


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