Автор: Tsuchiya Hideaki Название: Carrier Transport in Nanoscale MOS Transistors ISBN: 1118871669 ISBN-13(EAN): 9781118871669 Издательство: Wiley Рейтинг: Цена: 11550 р. Наличие на складе: Поставка под заказ.
Описание: A comprehensive advanced level examination of the transport theory of nanoscale devices
Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport
Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations
The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds
Автор: Lundstrom Название: Fundamentals of Carrier Transport ISBN: 0521637244 ISBN-13(EAN): 9780521637244 Издательство: Cambridge Academ Рейтинг: Цена: 8052 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: An accessible introduction to the behaviour of charged carriers in semiconductors and semiconductor devices.
Описание: "Nonequilibrium Carrier Dynamics in Semiconductors" is a well-established, specialist conference, held every 2 years, covering a range of topics of current interest to R&D in semiconductor physics/materials, optoelectronics, nanotechnology, quantum information processing. Papers accepted for publication are selected and peer-reviewed by members of the Program Committee during the conference to ensure both rapid and high-quality processing.
Автор: Marco Saraniti; Umberto Ravaioli Название: Nonequilibrium Carrier Dynamics in Semiconductors ISBN: 3642071694 ISBN-13(EAN): 9783642071690 Издательство: Springer Рейтинг: Цена: 27345 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: "Nonequilibrium Carrier Dynamics in Semiconductors" is a well-established, specialist conference, held every two years, covering a range of topics of current interest to R&D in semiconductor physics/materials, optoelectronics, nanotechnology, quantum information processing.
Автор: Lars Rebohle; Wolfgang Skorupa Название: Rare-Earth Implanted MOS Devices for Silicon Photonics ISBN: 3642265588 ISBN-13(EAN): 9783642265587 Издательство: Springer Рейтинг: Цена: 13584 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications.
Автор: Leblebici Название: Hot-Carrier Reliability of MOS VLSI Circuits ISBN: 079239352X ISBN-13(EAN): 9780792393528 Издательство: Springer Рейтинг: Цена: 22461 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Addresses the issues related to hot-carrier reliability of MOS VLSI circuits.This book is primarily for use by engineers and scientists who study device and circuit-level reliability in VLSI systems and develop practical reliability measures and models.
Описание: The benefits and success of multi-carrier (MC) modulation on one side and the flexibility offered by the spread spectrum (SS) technique on the other side have motivated many researchers to investigate the combination of both techniques since 1993. This combination known as multi-carrier spread spectrum (MC-SS) benefits from the advantages of both systems and offers high flexibility, high spectral efficiency, simple detection strategies, narrow-band interference rejection capability, etc. The basic principle of this combination is straightforward: The spreading is performed as direct sequence spread spectrum (DS-SS) but instead of transmitting the chips over a single carrier, several sub-carriers are employed. The MC modulation and demodulation can easily be realized in the digital domain by performing IFFT and FFT operations. The separation of the users' signals can be performed in the code domain. MC-SS systems can perform the spreading in frequency direction, which allows for simple signal detection strategies. Since 1993, MC-SS has been deeply studied and new alternative solutions have been proposed. Meanwhile, deep system analysis and comparison with DS-CDMA have been performed that show the superiority of MC-CDMA. The aim of this book is to edit the ensemble of the newest contributions and research results in this new field that have been presented during the 4th International Workshop on Multi-Carrier Spread-Spectrum (MC-SS 2003), held in Oberpfaffenhofen, Germany.
Автор: Fazel K., Kaiser S. Название: Multi-Carrier Spread-Spectrum & Related Topics ISBN: 0792376536 ISBN-13(EAN): 9780792376538 Издательство: Springer Цена: 10445 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The benefits and success of multi-carrier (MC) modulation on one side and the flexibility offered by the spread spectrum (SS) technique on the other side has motivated many researchers to investigate the combination of both techniques since 1993. This combination, known as multi-carrier spread-spectrum (MC-SS), benefits from the main advantages of both systems and offers high flexibility, high spectral efficiency, simple detection strategies, narrow-band interference rejection capability, etc.. The basic principle of this combination is straightforward: The spreading is performed as direct sequence spread-spectrum (DS-SS) but instead of transmitting the chips over a single carrier, several sub-carriers could be employed. The MC modulation and demodulation can easily be realized in the digital domain by performing IFFT and FFT operations. The separation of the users' signals could be performed in the code domain. This means that the MC-SS system performs the spreading in the frequency domain, which allows for simple signal detection strategies. Since 1993, MCSS has been deeply studied and new alternative solutions have been proposed. Meanwhile, deep system analysis and comparison with DS-CDMA have been performed that show the superiority of MC-CDMA. The aim of Multi-Carrier Spread-Spectrum & Related Topics is to edit the ensemble of the newest contributions and research results in this new field that will be presented during three days at the Third International Workshop on Multi-Carrier Spread-Spectrum (MC-SS) & Related Topics, held in Oberpfaffenhofen, Germany.
Описание: The benefits and success of multi-carrier (MC) modulation on one side and the flexibility offered by the spread spectrum (SS) technique on the other side have motivated many researchers to investigate the combination of both techniques since 1993. This combination known as multi-carrier spread spectrum (MC-SS) benefits from the advantages of both systems and offers high flexibility, high spectral efficiency, simple detection strategies, narrow-band interference rejection capability, etc. The basic principle of this combination is straightforward: The spreading is performed as direct sequence spread spectrum (DS-SS) but instead of transmitting the chips over a single carrier, several sub-carriers are employed. The MC modulation and demodulation can easily be realized in the digital domain by performing IFFT and FFT operations. The separation of the users’ signals can be performed in the code domain. MC-SS systems can perform the spreading in frequency direction, which allows for simple signal detection strategies. Since 1993, MC-SS has been deeply studied and new alternative solutions have been proposed. Meanwhile, deep system analysis and comparison with DS-CDMA have been performed that show the superiority of MC-CDMA. The aim of Multi-Carrier Spread-Spectrum is to edit the ensemble of the newest contributions and research results in this new field that have been presented during the 5th International Workshop on Multi-Carrier Spread-Spectrum (MC-SS 2005), held in Oberpfaffenhofen, Germany.
Автор: Haartman Martin v., Г–stling Mikael Название: Low-Frequency Noise in Advanced MOS Devices ISBN: 1402059094 ISBN-13(EAN): 9781402059094 Издательство: Springer Рейтинг: Цена: 16602 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Low-Frequency Noise in Advanced CMOS Devices begins with an introduction to noise, describing the fundamental noise sources and basic circuit analysis. The characterization of low-frequency noise is discussed in detail and useful practical advice is given. The various theoretical and compact low-frequency (1/f) noise models in MOS transistors are treated extensively providing an in-depth understanding of the low-frequency noise mechanisms and the potential sources of the noise in MOS transistors. Advanced CMOS technology including nanometer scaled devices, strained Si, SiGe, SOI, high-k gate dielectrics, multiple gates and metal gates are discussed from a low-frequency noise point of view. Some of the most recent publications and conference presentations are included in order to give the very latest view on the topics. The book ends with an introduction to noise in analog/RF circuits and describes how the low-frequency noise can affect these circuits.
Описание: This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600? and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8?10?7?•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
Описание: Helps readers understand the physics behind MOS devices for low-voltage and low-energy applications
- Based on timely published and unpublished work written by expert authors - Discusses various promising MOS devices applicable to low-energy environmental and biomedical uses - Describes the physical effects (quantum, tunneling) of MOS devices - Demonstrates the performance of devices, helping readers to choose right devices applicable to an industrial or consumer environment - Addresses some Ge-based devices and other compound-material-based devices for high-frequency applications and future development of high performance devices.
'Seemingly innocuous everyday devices such as smartphones, tablets and services such as on-line gaming or internet keyword searches consume vast amounts of energy. Even when in standby mode, all these devices consume energy. The upcoming "Internet of Things" (IoT) is expected to deploy 60 billion electronic devices spread out in our homes, cars and cities.
Britain is already consuming up to 16 per cent of all its power through internet use and this rate is doubling every four years. According to The UK's Daily Mail May (2015), if usage rates continue, all of Britain's power supply could be consumed by internet use in just 20 years. In 2013, U.S. data centers consumed an estimated 91 billion kilowatt-hours of electricity, corresponding to the power generated by seventeen 1000-megawatt nuclear power plants. Data center electricity consumption is projected to increase to roughly 140 billion kilowatt-hours annually by 2020, the equivalent annual output of 50 nuclear power plants. (Natural Resources Defense Council, USA, Feb. 2015)
All these examples stress the urgent need for developing electronic devices that consume as little energy as possible. The book "MOS Devices for Low-Voltage and Low-Energy Applications" explores the different transistor options that can be utilized to achieve that goal. It describes in detail the physics and performance of transistors that can be operated at low voltage and consume little power, such as subthreshold operation in bulk transistors, fully depleted SOI devices, tunnel FETs, multigate and gate-all-around MOSFETs. Examples of low-energy circuits making use of these devices are given as well.
The book "MOS Devices for Low-Voltage and Low-Energy Applications" is a good reference for graduate students, researchers, semiconductor and electrical engineers who will design the electronic systems of tomorrow.'
--- Dr. Jean-Pierre Colinge, Taiwan Semiconductor Manufacturing Company (TSMC)
"The authors present a creative way to show how different MOS devices can be used for low-voltage and low-power applications. They start with Bulk MOSFET, following with SOI MOSFET, FinFET, gate-all-around MOSFET, Tunnel-FET and others. It is presented the physics behind the devices, models, simulations, experimental results and applications. This book is interesting for researchers, graduate and undergraduate students. The low-energy field is an important topic for integrated circuits in the future and none can stay out of this."
--- Prof. Joao A. Martino, University of Sao Paulo, Brazil
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