Theory of Electron Transport in Semiconductors, Carlo Jacoboni
Автор: Kamakhya Prasad Ghatak; Sitangshu Bhattacharya; De Название: Einstein Relation in Compound Semiconductors and Their Nanostructures ISBN: 3540795561 ISBN-13(EAN): 9783540795568 Издательство: Springer Рейтинг: Цена: 30606.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Deals with the Einstein relation in compound semiconductors and their nanostructures. This book considers materials such as nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, and inversion layers.
Автор: Jan A. Gaj; Jacek Kossut Название: Introduction to the Physics of Diluted Magnetic Semiconductors ISBN: 3642266738 ISBN-13(EAN): 9783642266737 Издательство: Springer Рейтинг: Цена: 22201.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: As materials whose semiconducting properties are influenced by magnetic ions, DMSs are central to the emerging field of spintronics. This volume focuses both on basic physical mechanisms (e.g. carrier-ion and ion-ion interactions), and resulting phenomena.
Автор: Victor I. Mikla; Victor V. Mikla Название: Metastable States in Amorphous Chalcogenide Semiconductors ISBN: 364202744X ISBN-13(EAN): 9783642027444 Издательство: Springer Рейтинг: Цена: 18167.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book presents experimental results on the structural and electronic metastable states in Se-rich chalcogenides. Coverage includes states in the mobility gap, structural transformation, photocrystallization, and many potential related applications.
Автор: Karl W. B?er Название: Introduction to Space Charge Effects in Semiconductors ISBN: 3642262074 ISBN-13(EAN): 9783642262074 Издательство: Springer Рейтинг: Цена: 26120.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Describing space-charge effects in semiconductors, this text moves from basic principles to advanced application in semiconducting devices. It uses detailed analyses of the transport, Poisson, and continuity equations to show the behavior of solution curves.
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