Описание: This book addresses issues related to both fundamental materials science and applied technology and offers an overview of studies on film growth and crystallization, materials characterization, defects, metastability and carrier transport, as well as devices such as solar cells and thin-film transistors.
Описание: Written for all experts in this field, this book presents an overview of the state-of-the-art in physics and technology of amorphous-crystalline heterostructure silicon solar cells.
Описание: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001.
Описание: Amorphous silicon solar cell technology has evolved considerably since the first amorphous silicon solar cells were made at RCA Laboratories in 1974. Scien- tists working in a number of laboratories worldwide have developed improved alloys based on hydrogenated amorphous silicon and microcrystalline silicon.
Автор: Robert A. Street Название: Technology and Applications of Amorphous Silicon ISBN: 3642084990 ISBN-13(EAN): 9783642084997 Издательство: Springer Рейтинг: Цена: 26120.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Amorphous silicon has enabled a new technology for large-area electronics, with major applications in liquid crystal displays, image sensing and solar power conversion. This book presents a broad description of the current technology and its future potential, so that the reader can understand how the particular properties of amorphous silicon lead to unique applications. Topics covered include the design of the amorphous silicon transistor and sensor devices, the range of matrix-addressed arrays and other systems that can be fabricated, and the performance of the various application areas.
Автор: Fraley Bill Название: Silicon Carbide Devices and Technology ISBN: 1632384140 ISBN-13(EAN): 9781632384140 Издательство: Неизвестно Цена: 25749.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book elaborately discusses the silicon carbide devices and their technology. Lately, a few Silicon Carbide (SiC ) power devices like metal-oxide-semiconductor field-effect-transistors (MOSFETs), Schottky-barrier diodes (SBDs), junction FETs (JFETs), and their combined modules have been introduced in the market. However, to securely supply them and decrease their cost, further enhancements for material characterizations as well as for device processing are still required. This book comprehensively elucidates current technologies on processing, modeling, characterization, manufacturing, and other important aspects of SiC devices. The aim of this book is to serve as a helpful source of information for advancements in SiC devices.
Автор: Ludwig Treitinger; Mitiko Miura-Mattausch Название: Ultra-Fast Silicon Bipolar Technology ISBN: 3642743625 ISBN-13(EAN): 9783642743627 Издательство: Springer Рейтинг: Цена: 11173.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference.
Автор: Jean-Claude Vial; Jacques Derrien Название: Porous Silicon Science and Technology ISBN: 3540589368 ISBN-13(EAN): 9783540589365 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The discovery of bright visible light emission from porous silicon has opened the door to various nanometer sized silicon structures where the confinement of carriers gives rise to interesting physical properties.
ООО "Логосфера " Тел:+7(495) 980-12-10 www.logobook.ru
