Discrete Stochastic Processes, Robert G. Gallager

Автор: Kay
Название: Intuitive Probability and Random Processes using MATLAB®
ISBN: 0387241574 ISBN-13(EAN): 9780387241579
Издательство: Springer
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Цена: 15372.00 р.
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Описание: Offering an introduction to probability and random processes, this book merges theory with practice. It is suitable for undergraduate and first-year graduate students in engineering, practicing engineers as well as others having appropriate mathematical background.

Автор: Joe Wiart
Название: Radio-Frequency Human Exposure Assessment: From Deterministic to Stochastic Methods
ISBN: 1848218567 ISBN-13(EAN): 9781848218567
Издательство: Wiley
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Цена: 22010.00 р.
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Описание: Nowadays approximately 6 billion people use a mobile phone and they now take a central position within our daily lives. The 1990s saw a tremendous increase in the use of wireless systems and the democratization of this means of communication.

Автор: Posseme, Nicolas
Название: Plasma Etching Processes for CMOS Devices Realization
ISBN: 1785480960 ISBN-13(EAN): 9781785480966
Издательство: Elsevier Science
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Цена: 9348.00 р.
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Описание: Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch compensation helps to create devices that are smaller than 20 nm. But, with the constant downscaling in device dimensions and the emergence of complex 3D structures (like FinFet, Nanowire and stacked nanowire at longer term) and sub 20 nm devices, plasma etching requirements have become more and more stringent.Now more than ever, plasma etch technology is used to push the limits of semiconductor device fabrication into the nanoelectronics age. This will require improvement in plasma technology (plasma sources, chamber design, etc.), new chemistries (etch gases, flows, interactions with substrates, etc.) as well as a compatibility with new patterning techniques such as multiple patterning, EUV lithography, Direct Self Assembly, ebeam lithography or nanoimprint lithography.This book presents these etch challenges and associated solutions encountered throughout the years for transistor realization.