Описание: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001.
Автор: Muthu Wijesundara; Robert Azevedo Название: Silicon Carbide Microsystems for Harsh Environments ISBN: 1461428823 ISBN-13(EAN): 9781461428824 Издательство: Springer Рейтинг: Цена: 19589.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book reviews state-of-the-art Silicon Carbide (SiC) technologies. It includes reviews of MEMS devices and provides a framework for the joining of electronics and MEMS along with packaging into usable harsh-environment-ready sensor modules.
Автор: Baliga B Jayant Название: Gallium Nitride And Silicon Carbide Power Devices ISBN: 9813109408 ISBN-13(EAN): 9789813109407 Издательство: World Scientific Publishing Рейтинг: Цена: 16790.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
"This is a very well written book with many illustrations, examples, and references that will give the reader a good understanding of the concepts being explained. This will surely become a classic reference book on power semiconductors. Students in the power semiconductor field as well as working professionals in the field that want to quickly learn about wide bandgap power semiconductors will find this book to be invaluable and well worth the time to read."
IEEE Electrical Insulation Magazine
During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.
This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.
Автор: Mawatari Kazuma Название: Extended-Nano Fluidic Systems for Chemistry and Biotechnology ISBN: 1848168012 ISBN-13(EAN): 9781848168015 Издательство: World Scientific Publishing Рейтинг: Цена: 12514.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Over the years, various research fields utilizing microfluidics have been formed. General micro-integration methods were proposed, and the supporting fundamental technologies were widely developed. These methodologies have made various applications in the fields of analytical and chemical synthesis. This title deals with these topics.
Автор: Latu-Romain Название: Silicon Carbide One-dimensional Nanostructures ISBN: 1848217978 ISBN-13(EAN): 9781848217973 Издательство: Wiley Рейтинг: Цена: 22010.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Dedicated to SiC-based 1D nanostructures, this book explains the properties and different growth methods of these nanostructures. It details carburization of silicon nanowires, a growth process for obtaining original Si-SiC core-shell nanowires and SiC nanotubes of high crystalline quality, thanks to the control of the siliconout-diffusion.
Автор: Dudley Название: Silicon Carbide 2008 — Materials, Processing and Devices ISBN: 1605110396 ISBN-13(EAN): 9781605110394 Издательство: Cambridge Academ Рейтинг: Цена: 13464.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Silicon carbide (SiC) is a robust semiconductor material being actively developed for high-power and high-temperature applications, especially in the field of power electronics and sensors for harsh environments. This book, the fifth in a continuing series, focuses on SiC growth, defects, and devices.
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