Carrier Transport in Nanoscale MOS Transistors, Tsuchiya Hideaki
Автор: Esseni Название: Nanoscale MOS Transistors ISBN: 0521516846 ISBN-13(EAN): 9780521516846 Издательство: Cambridge Academ Рейтинг: Цена: 11503 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results
Описание: The continuous scaling of transistors in the last half of century has been the driving force for electronics. The channel length of the transistors in production today is below 100nm. A wide variety of devices are also being explored to complement or even replace silicon transistors at molecular scales. Similarities between nanoscale and micronscale transistors exist, but nanotransistors also behave in drastically different ways. For example, ballistic transport and quantum effects become much more important. To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary.The book provides a description of the recent development of theory, modeling, and simulation of nanotransistors for engineers and scientists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors.
Описание: The book gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology with particular emphasis placed on today's advanced compact models and their physical foundations. The first part introduces the fundamentals of bipolar transistors on a graduate-student level. The second part considers the physics and modeling of bipolar transistors in detail. The final part describes basic circuit configurations, aspects of process integration and applications. This modern book-length treatment will interest those working in the field, including circuit designers, industrial process developers, and PhD students.
Автор: Peter Ashburn Название: SiGe Heterojunction Bipolar Transistors ISBN: 0470848383 ISBN-13(EAN): 9780470848388 Издательство: Wiley Рейтинг: Цена: 13225 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Features SiGe products which include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications. This book describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors. It explains the operating principles and applications of bipolar transistor technology.
Описание: Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction:A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter.The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.
Описание: This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si:H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si:H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si:H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
Автор: Norman Dye Название: Radio Frequency Transistors, ISBN: 0750672811 ISBN-13(EAN): 9780750672818 Издательство: Elsevier Science Рейтинг: Цена: 6996 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A tool kit for successful RF circuit design, this work contains practical design information based on years of experience from authors who have worked with the leading manufacturers of RF components. It focuses primarily on the more difficult area of high power transistor amplifier design and construction.
Автор: Pulfrey Название: Understanding Modern Transistors and Diodes ISBN: 0521514606 ISBN-13(EAN): 9780521514606 Издательство: Cambridge Academ Рейтинг: Цена: 11734 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Written in a concise, easy-to-read style, this text for senior undergraduate and graduate courses covers all key topics thoroughly. It is also a useful self-study guide for practising engineers who need a complete, up-to-date review of the subject. Key features: • Rigorous theoretical treatment combined with practical detail • A theoretical framework built up systematically from the Schr?dinger Wave Equation and the Boltzmann Transport Equation • Covers MOSFETS, HBTs and HJFETS • Uses the PSP model for MOSFETS • Rigorous treatment of device capacitance • Describes the operation of modern, high-performance transistors and diodes • Evaluates the suitability of various transistor types and diodes for specific modern applications • Covers solar cells and LEDs and their potential impact on energy generation and reduction • Includes a chapter on nanotransistors to prepare students and professionals for the future • Provides results of detailed numerical simulations to compare with analytical solutions • End-of-chapter exercises • Online lecture slides for undergraduate and graduate courses
Автор: Chen Gang Название: Nanoscale energy transport and conversion ISBN: 019515942X ISBN-13(EAN): 9780195159424 Издательство: Oxford Academ Рейтинг: Цена: 20132 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A graduate level textbook in nanoscale heat transfer and energy conversion that can also be used as a reference for researchers in the field of nanoengineering. It provides an overview of microscale heat transfer, focusing on thermal energy storage and transport. This book is part of the "MIT-Pappalardo Series in Mechanical Engineering".
Описание: A timely and thorough overview of the state of the art of microwave transistors Since the invention of the bipolar transistor in 1947, semiconductor electronics has been advancing and evolving at an enormous pace. Most of the attention has been focused on Si VLSI (Very Large Scale Integration) technology, the backbone of the consumer semiconductor electronics industry. Microwave transistors went almost unnoticed until the early 1980s because they were primarily utilized in military and space applications. The recent far-reaching upheavals in civil communications technology especially wireless communication such as cell phones have thrust microwave transistor technology into the limelight as never before. Modern Microwave Transistors: Theory, Design, and Performance prepares the engineer with a wide-ranging introduction and overview of microwave transistors. Written by two acknowledged experts, this guide to one of the fastest growing fields in semiconductor electronics offers insight into: History and concepts of microwave transistors Semiconductor and heterostructure physics Properties of the semiconductor materials used in microwave transistors, such as Si, SiGe, III-V compounds, and III-nitrides Device structures, analysis, and design of the different types of microwave transistors including MESFETs, HEMTs, MOSFETs, BJTs, and HBTs State-of-the-art performance of microwave transistors Current and emerging applications of microwave transistors A timely and comprehensive contribution to the field, Modern Microwave Transistors is an unmatched resource for RF, device, circuit and wireless communications engineers, and others with an interest in transistor technology. It will also be useful for students in the field of semiconductor and microwave electronics.
Описание: Research into Tunneling Field Effect Transistors (TFETs) has developed significantly in recent times, indicating their significance in low power integrated circuits.
Автор: Ventra, Massimiliano Di Название: Electrical transport in nanoscale systems ISBN: 0521896347 ISBN-13(EAN): 9780521896344 Издательство: Cambridge Academ Рейтинг: Цена: 8397 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: In recent years there has been a huge increase in the research and development of nanoscale science and technology. Central to the understanding of the properties of nanoscale structures is the modeling of electronic conduction through these systems. This graduate textbook provides an in-depth description of the transport phenomena relevant to systems of nanoscale dimensions. In this textbook the different theoretical approaches are critically discussed, with emphasis on their basic assumptions and approximations. The book also covers information content in the measurement of currents, the role of initial conditions in establishing a steady state, and the modern use of density-functional theory. Topics are introduced by simple physical arguments, with particular attention to the non-equilibrium statistical nature of electrical conduction, and followed by a detailed formal derivation. This textbook is ideal for graduate students in physics, chemistry, and electrical engineering.
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