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Introduction to the Physics of Silicene and other 2D Materials, Seymur Cahangirov; Hasan Sahin; Guy Le Lay; Angel


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Автор: Seymur Cahangirov; Hasan Sahin; Guy Le Lay; Angel
Название:  Introduction to the Physics of Silicene and other 2D Materials
ISBN: 9783319465708
Издательство: Springer
Классификация:




ISBN-10: 3319465708
Обложка/Формат: Paperback
Страницы: 96
Вес: 0.18 кг.
Дата издания: 2017
Серия: Lecture notes in physics
Язык: English
Иллюстрации: 1 black & white illustrations, 51 colour illustrations, biography
Размер: 234 x 156 x 6
Читательская аудитория: Professional & vocational
Ссылка на Издательство: Link
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Поставляется из: Германии
Описание: This concise book offers an essential introduction and reference guide for the many newcomers to the field of physics of elemental 2D materials. Silicene and related materials are currently among the most actively studied materials, especially following the first experimental synthesis on substrates in 2012. Accordingly, this primer introduces and reviews the most crucial developments regarding silicene from both theoretical and experimental perspectives. At the same time the reader is guided through the extensive body of relevant foundational literature. The text starts with a brief history of silicene, followed by a comparison of the bonding nature in silicon versus carbon atoms. Here, a simple but robust framework is established to help the reader follow the concepts presented throughout the book. The book then presents the atomic and electronic structure of free-standing silicene, followed by an account of the experimental realization of silicene on substrates. This topic is subsequently developed further to discuss various reconstructions that silicene acquires due to interactions with the substrate and how such effects are mirrored in the electronic properties. Next the book examines the dumbbell structure that is the key to understanding the growth mechanism and atomic structure of multilayer silicene. Last but not least, it addresses similar effects in other elemental 2D materials from group IV (germanene, stanane), group V (phosphorene) and group III (borophene), as well as transition metal dichalcogenides and other compositions, so as to provide a general comparative overview of their electronic properties.
Дополнительное описание: History of silicene.- Silicon versus carbon; likes and dislikes.- Atomic structure and stability of silicene.- Electronic structure of silicene.- Various functionals and beyond DFT.- Experimental realization on substrates.- Atomic and electronic structure



Introduction to Isotopic Materials Science

Автор: Vladimir G. Plekhanov
Название: Introduction to Isotopic Materials Science
ISBN: 331942260X ISBN-13(EAN): 9783319422602
Издательство: Springer
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Цена: 16769.00 р.
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Описание: This book describes new trends in the nanoscience of isotopic materials science. Assuming a background in graduate condensed matter physics and covering the fundamental aspects of isotopic materials science from the very beginning, it equips readers to engage in high-level professional research in this area. The book?s main objective is to provide insight into the question of why solids are the way they are, either because of how their atoms are bonded with one another, because of defects in their structure, or because of how they are produced or processed. Accordingly, it explores the science of how atoms interact, connects the results to real materials properties, and demonstrates the engineering concepts that can be used to produce or improve semiconductors by design. In addition, it shows how the concepts discussed are applied in the laboratory. The book addresses the needs of researchers, graduate students and senior undergraduate students alike. Although primarily written for materials science audience, it will be equally useful to those teaching in electrical engineering, materials science or even chemical engineering or physics curricula. In order to maintain the focus on materials concepts, however, the book does not burden the reader with details of many of the derivations and equations nor does it delve into the details of electrical engineering topics.


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