Disordered Semiconductors, Marc A. Kastner; Stadford R. Ovshinsky; Gordon A.

Автор: Bengt G. Svensson
Название: Oxide Semiconductors,88
ISBN: 012396489X ISBN-13(EAN): 9780123964892
Издательство: Elsevier Science
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Описание: Suitable for physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry.

Автор: Karl Hess; J.P. Leburton; U. Ravaioli
Название: Hot Carriers in Semiconductors
ISBN: 1461380359 ISBN-13(EAN): 9781461380351
Издательство: Springer
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Цена: 15672.00 р.
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Описание: On behalf of the Program and International Advisory Committees, we thank the participants, who made the conference a successful and pleasant experience, and the support of the Army Research Office, the Office of Naval Research, and the Beckman Institute of the University of Illinois at Urbana-Champaign.

Автор: J. Tsidilkovski
Название: Electron Spectrum of Gapless Semiconductors
ISBN: 3642643914 ISBN-13(EAN): 9783642643910
Издательство: Springer
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Цена: 16979.00 р.
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Описание: A presentation of the peculiarities of the physical properties of a comparatively new class of solids. GSs are of practical interest since they are very sensitive to impurities, and to the influence of light, magnetic and electric fields, and to pressure.

Автор: Yongke Sun; Scott E. Thompson; Toshikazu Nishida
Название: Strain Effect in Semiconductors
ISBN: 1441905510 ISBN-13(EAN): 9781441905512
Издательство: Springer
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Цена: 23508.00 р.
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Описание: Presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. This book discusses relevant applications of strain, focusing on the fundamental physics pertaining to bulk and scaled nano-devices.

Автор: Junhao Chu; Arden Sher
Название: Device Physics of Narrow Gap Semiconductors
ISBN: 1441910395 ISBN-13(EAN): 9781441910394
Издательство: Springer
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Цена: 30039.00 р.
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Описание: This volume describes the underlying concepts in materials science and device physics within the context of narrow gap semiconductors, in addition to their relationship to opto-electronic devices. Topics include impurities and defects, recombination mechanisms and surface and interface properties.

Автор: Khler Anna
Название: Electronic Processes in Organic Semiconductors
ISBN: 3527332928 ISBN-13(EAN): 9783527332922
Издательство: Wiley
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Цена: 10288.00 р.
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Описание: The first advanced textbook to focus on the fundamentals in a brief, coherent and comprehensive way. Based on one of the author`s proven lecture course, it prepares students to understand the many multi-authored books available that discuss a particular aspect in more detail.

Автор: Fischetti, Massimo V. Vandenberghe, William G. Aboud, Shela
Название: Advanced physics of electron transport in semiconductors and nanostructures
ISBN: 3319011006 ISBN-13(EAN): 9783319011004
Издательство: Springer
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Цена: 15372.00 р.
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Описание: Advanced Physics of Semiconductors

Название: Photocatalytic semiconductors
ISBN: 3319109987 ISBN-13(EAN): 9783319109985
Издательство: Springer
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Цена: 15672.00 р.
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Описание: This critical volume examines the different methods used for the synthesis of a great number of photocatalysts, including TiO2, ZnO and other modified semiconductors, as well as characterization techniques used for determining the optical, structural and morphological properties of the semiconducting materials.

Название: Compound Semiconductors, Physics, T
ISBN: 9814774073 ISBN-13(EAN): 9789814774079
Издательство: Taylor&Francis
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Цена: 14546.00 р.
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Описание: This book provides an overview of compound semiconductor materials and their technology. After presenting a theoretical background, it describes the relevant material preparation technologies for bulk and thin-layer epitaxial growth. It then briefly discusses the electrical, optical, and structural properties of semiconductors, complemented by a description of the most popular characterization tools, before more complex hetero- and low-dimensional structures are discussed. A special chapter is devoted to GaN and related materials, owing to their huge importance in modern optoelectronic and electronic devices, on the one hand, and their particular properties compared to other compound semiconductors, on the other. In the last part of the book, the physics and functionality of optoelectronic and electronic device structures (LEDs, laser diodes, solar cells, field-effect and heterojunction bipolar transistors) are discussed on the basis of the specific properties of compound semiconductors presented in the preceding chapters of the book. Compound semiconductors form the back-bone of all opto-electronic and electronic devices besides the classical Si electronics. Currently the most important field is solid state lighting with highly efficient LEDs emitting visible light. Also laser diodes of all wavelength ranges between mid-infrared and near ultraviolet have been the enabler for a huge number of unprecedented applications like CDs and DVDs for entertainment and data storage, not to speak about the internet, which would be impossible without optical data communications with infrared laser diodes as key elements. This book provides a concise overview over this class of materials, including the most important technological aspects for their fabrication and characterisation, also covering the most relevant devices based on compound semiconductors. It presents therefore an excellent introduction into this subject not only for students, but also for engineers and scientist who intend to put their focus on this field of science.

Автор: Norbert Karl; Ludmila N. Demianets; Anatoly N. Lob
Название: Organic Crystals Germanates Semiconductors
ISBN: 3642677665 ISBN-13(EAN): 9783642677663
Издательство: Springer
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Описание: With contributions by numerous experts

Автор: B.R. Nag
Название: Electron Transport in Compound Semiconductors
ISBN: 3642814182 ISBN-13(EAN): 9783642814181
Издательство: Springer
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Описание: Discovery of new transport phenomena and invention of electron devices through exploitation of these phenomena have caused a great deal of interest in the properties of compound semiconductors in recent years.