Compound Semiconductor Device Modelling, Christopher M. Snowden; Robert E. Miles
Автор: Robert K. Willardson Название: Processing and Properties of Compound Semiconductors,73 ISBN: 0127521828 ISBN-13(EAN): 9780127521824 Издательство: Elsevier Science Рейтинг: Цена: 31686.00 р. Наличие на складе: Поставка под заказ.
Описание: In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature.
Автор: Kamakhya Prasad Ghatak; Sitangshu Bhattacharya; De Название: Einstein Relation in Compound Semiconductors and Their Nanostructures ISBN: 3540795561 ISBN-13(EAN): 9783540795568 Издательство: Springer Рейтинг: Цена: 30606.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Deals with the Einstein relation in compound semiconductors and their nanostructures. This book considers materials such as nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, and inversion layers.
Название: Compound Semiconductors, Physics, T ISBN: 9814774073 ISBN-13(EAN): 9789814774079 Издательство: Taylor&Francis Рейтинг: Цена: 14546.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides an overview of compound semiconductor materials and their technology. After presenting a theoretical background, it describes the relevant material preparation technologies for bulk and thin-layer epitaxial growth. It then briefly discusses the electrical, optical, and structural properties of semiconductors, complemented by a description of the most popular characterization tools, before more complex hetero- and low-dimensional structures are discussed. A special chapter is devoted to GaN and related materials, owing to their huge importance in modern optoelectronic and electronic devices, on the one hand, and their particular properties compared to other compound semiconductors, on the other. In the last part of the book, the physics and functionality of optoelectronic and electronic device structures (LEDs, laser diodes, solar cells, field-effect and heterojunction bipolar transistors) are discussed on the basis of the specific properties of compound semiconductors presented in the preceding chapters of the book. Compound semiconductors form the back-bone of all opto-electronic and electronic devices besides the classical Si electronics. Currently the most important field is solid state lighting with highly efficient LEDs emitting visible light. Also laser diodes of all wavelength ranges between mid-infrared and near ultraviolet have been the enabler for a huge number of unprecedented applications like CDs and DVDs for entertainment and data storage, not to speak about the internet, which would be impossible without optical data communications with infrared laser diodes as key elements. This book provides a concise overview over this class of materials, including the most important technological aspects for their fabrication and characterisation, also covering the most relevant devices based on compound semiconductors. It presents therefore an excellent introduction into this subject not only for students, but also for engineers and scientist who intend to put their focus on this field of science.
Автор: B.R. Nag Название: Electron Transport in Compound Semiconductors ISBN: 3642814182 ISBN-13(EAN): 9783642814181 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Discovery of new transport phenomena and invention of electron devices through exploitation of these phenomena have caused a great deal of interest in the properties of compound semiconductors in recent years.
Автор: Takahiko Misugi; Akihiro Shibatomi Название: Compound and Josephson High-Speed Devices ISBN: 1475797761 ISBN-13(EAN): 9781475797763 Издательство: Springer Рейтинг: Цена: 26122.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: In recent years, III-V devices, integrated circuits, and superconducting integrated circuits have emerged as leading contenders for high-frequency and ultrahigh- speed applications.
Автор: Suresh Jain; Magnus Willander; R. Van Overstraeten Название: Compound Semiconductors Strained Layers and Devices ISBN: 1461370000 ISBN-13(EAN): 9781461370000 Издательство: Springer Рейтинг: Цена: 26122.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Yuanqing Xia; Mengyin Fu Название: Compound Control Methodology for Flight Vehicles ISBN: 3642368409 ISBN-13(EAN): 9783642368400 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book focuses on new control methods for flight vehicles. It introduces the concept of compound control and examines the advantages and limitations of Sliding Mode Control (SMC) and Active Disturbance Rejection Control (ADRC).
Описание: In this book, the author investigates hidden-order phase transition at T0 = 17.5 K in the heavy-fermion URu2Si2. The author also studies the superconducting state of URu2Si2 below Tc = 1.4 K, which coexists with the hidden-order phase.
Автор: Wang Zhiming M Название: Bismuth-Containing Compounds ISBN: 1461481201 ISBN-13(EAN): 9781461481201 Издательство: Springer Рейтинг: Цена: 22203.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book offers comprehensive coverage of novel bismuth-related materials and devices. It provides a foundation for the development of future optoelectronic, thermoelectric, and electronic devices.
Описание: The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. This book is intended for readers who are either new to the field or are experienced workers in the field who need a comprehensive and up to date view of this rapidly expanding area.
This thesis explores thermal transport in selected rare-earth-based intermetallic compounds to answer questions of great current interest. It also sheds light on the interplay of Kondo physics and Fermi surface changes.
By performing thermal conductivity and electrical resistivity measurements at temperatures as low as 25mK, the author demonstrates that the Wiedemann–Franz law, a cornerstone of metal physics, is violated at precisely the magnetic-field-induced quantum critical point of the heavy-fermion metal YbRh2Si2. This first-ever observation of a violation has dramatic consequences, as it implies a breakdown of the quasiparticle picture.
Utilizing an innovative technique to measure low-temperature thermal transport isothermally as a function of the magnetic field, the thesis interprets specific, partly newly discovered, high-field transitions in CeRu2Si2 and YbRh2Si2 as Lifshitz transitions related to a change in the Fermi surface.
Lastly, by applying this new technique to thermal conductivity measurements of the skutterudite superconductor LaPt4Ge12, the thesis proves that the system is a conventional superconductor with a single energy gap. Thus, it refutes the widespread speculations about unconventional Cooper pairing in this material.
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