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Ion Implantation: Equipment and Techniques, H. Ryssel; H. Glawischnig


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Автор: H. Ryssel; H. Glawischnig
Название:  Ion Implantation: Equipment and Techniques
ISBN: 9783642691584
Издательство: Springer
Классификация:

ISBN-10: 3642691587
Обложка/Формат: Soft cover
Страницы: 558
Вес: 0.85 кг.
Дата издания: 07.12.2011
Серия: Springer Series in Electronics and Photonics
Язык: English
Издание: Softcover reprint of
Иллюстрации: Biography
Размер: 234 x 156 x 30
Читательская аудитория: Professional & vocational
Основная тема: Crystallography and Scattering Methods
Подзаголовок: Proceedings of the Fourth International Conference Berchtesgaden, Fed. Rep. of Germany, September 13–17, 1982
Ссылка на Издательство: Link
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Поставляется из: Германии
Описание: The Fourth International Conference on Ion Implantation: Equipment and Tech- niques was held at the Convention Center in Berchtesgaden, Bavaria, Germany, from September 13 to 17, 1982. It was attended by more than 200 participants from over 20 different countries. Severa1 series of conferences have dealt with the app1ication of ion implantation to semiconductors and other materials (Thousand Oaks, 1970; Garmisch-Partenkirchen, 1971; Osaka, 1974; Warwick, 1975; Bou1der, 1975; Budapest, 1978; and Albany, 1980). Another series of conferences has been devoted to implantation equipment and techniques (S- ford, 1977; Trento, 1978; and Kingston, 1980). This conference was the fourth in the 1atter series. Twe1ve invited papers and 55 contributed papers covered the areas of ion implantation equipment, measuring techniques, and app1ica- tions of implantation to metals and semiconductors. A schoo1 on ion implantation was held in connection with the conference, and the 1ectures presented at this schoo1 were pub1ished as Vo1. 10 of the Springer Series in E1ectrophysics under the tit1e Ion Implantation Techniques (edited by H. Rysse1 and H. G1awischnig). During the conference, space was also provided for presentations and demonstrations by manufacturers of ion implantation equipment. Once again, this conference provided a forum for free discussion among implantation specia1ists in industry as we11 as research institutions. Espe- cially effective in stimulating a free exchange of information was the daily get-together over free beer at the Bier Adam. Many people contributed to the success of this conference.


Ion Implantation Techniques

Автор: H. Ryssel; H. Glawischnig
Название: Ion Implantation Techniques
ISBN: 3642687814 ISBN-13(EAN): 9783642687815
Издательство: Springer
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Цена: 18284.00 р.
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Описание: In recent years, ion implantation has developed into the major doping technique for integrated circuits. Several series of conferences have dealt with the application of ion implantation to semiconductors and other materials (Thousand Oaks 1970, Garmisch-Partenkirchen 1971, Osaka 1974, Warwick 1975, Boulder 1976, Budapest 1978, and Albany 1980). Another series of conferences was devoted more to implantation equipment and tech- niques (Salford 1977, Trento 1978, and Kingston 1980). In connection with the Third International Conference on Ion Implantation: Equipment and Tech- niques, held at Queen's University, ' Kingston, Ontario, Canada, July 8-11, 1980, a two-day instructional program was organized parallel to an implan- tation conference for the first time. This implantation school concentra- ted on aspects of implantation-equipment design. This book contains all lectures presented at the International Ion Implantation School organized in connection with the Fourth International Conference on Ion Implantation: Equipment and Techniques, held at the Convention Center, Berchtesgaden, Germany, September 13-17, 1982. In con- trast to the first .school, the main emphasis in thiS school was placed on practical aspects of implanter operation and application. In three chap- ters, various machine aspects of ion implantation (general concepts, ion sources, safety, calibration, dOSimetry), range distributions (stopping power, range profiles), and measuring techniques (electrical and nonelec- tri ca 1 measu ri ng techni ques, annea 1 i ng) are di scussed. In the appendi x, a review of the state of the art in modern implantation equipment is given.


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