Electronic Properties of Doped Semiconductors, S. Luryi; B.I. Shklovskii; A.L. Efros

Автор: Hartmut, Haug Koch, Stephan W.
Название: Quantum theory of the optical and electronic properties of semiconductors
ISBN: 9812838848 ISBN-13(EAN): 9789812838841
Издательство: World Scientific Publishing
Рейтинг:
Цена: 7128.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Presents the basic elements to understand and research into semiconductor physics. This work deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. It covers fundamentals of optical bistability, semiconductor lasers, femtosecond excitation and the optical Stark effect.

Автор: Junhao Chu; Arden Sher
Название: Physics and Properties of Narrow Gap Semiconductors
ISBN: 1441925686 ISBN-13(EAN): 9781441925688
Издательство: Springer
Рейтинг:
Цена: 23508.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. This book offers clear descriptions of crystal growth and the fundamental structure and properties of these unique materials.

Автор: Vsevolod F. Kiselev; Oleg V. Krylov
Название: Electronic Phenomena in Adsorption and Catalysis on Semiconductors and Dielectrics
ISBN: 3642830226 ISBN-13(EAN): 9783642830228
Издательство: Springer
Рейтинг:
Цена: 10448.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The research done in this field will help to widen the scope of semi- conductor applications by finding novel ways of employing surface effects in the construct ion of mi croe 1 ectroni c devi ces, semi conductor gas ana lysers, solar cells, etc.

Автор: Robert K. Willardson
Название: Processing and Properties of Compound Semiconductors,73
ISBN: 0127521828 ISBN-13(EAN): 9780127521824
Издательство: Elsevier Science
Рейтинг:
Цена: 31686.00 р.
Наличие на складе: Поставка под заказ.

Автор: Kamakhya Prasad Ghatak; Sitangshu Bhattacharya; De
Название: Einstein Relation in Compound Semiconductors and Their Nanostructures
ISBN: 3540795561 ISBN-13(EAN): 9783540795568
Издательство: Springer
Рейтинг:
Цена: 30606.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Deals with the Einstein relation in compound semiconductors and their nanostructures. This book considers materials such as nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, and inversion layers.

Автор: Pierre Ruterana
Название: Nitride Semiconductors: Handbook on Materials and Devices
ISBN: 3527403876 ISBN-13(EAN): 9783527403875
Издательство: Wiley
Рейтинг:
Цена: 26928.00 р.
Наличие на складе: Поставка под заказ.

Описание: Semiconductor components based on silicon have been used in a wide range of applications for some time now. These elemental semiconductors are now well researched and technologically well developed. In the meantime the focus has switched to a new group of materials: ceramic semiconductors based on nitrides are currely the subject of research due to their optical and electronic characteristics. They open up new industrial possibilities in the field of photosensors, as light sources or as electronic components.
This collection of review articles provides a systematic and in-depth overview of the topic, on both a high and current level. It offers information on the physical basics as well as the latest results in a compact yet comprehensive manner. The contributions cover the physical processes involved in manufacture, from semiconductor growth, via their atomic structures and the related characteristics right up to future industrial applications. A highly pertinent book for anyone working in applied materials research or the semiconductor industry.

Автор: Ruth Shinar, Zhenan Bao, Iain McCulloch
Название: Organic Field-Effect Transistors XII; and Organic Semiconductors in Sensors and Bioelectronics VI (Proceedings of SPIE)
ISBN: 0819496812 ISBN-13(EAN): 9780819496812
Издательство: Mare Nostrum (Eurospan)
Рейтинг:
Цена: 16302.00 р.
Наличие на складе: Нет в наличии.

Описание: Proceedings of SPIE offer access to the latest innovations in research and technology and are among the most cited references in patent literature.

Автор: Karl W. B?er
Название: Introduction to Space Charge Effects in Semiconductors
ISBN: 3642262074 ISBN-13(EAN): 9783642262074
Издательство: Springer
Рейтинг:
Цена: 26120.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Describing space-charge effects in semiconductors, this text moves from basic principles to advanced application in semiconducting devices. It uses detailed analyses of the transport, Poisson, and continuity equations to show the behavior of solution curves.

Автор: Jan A. Gaj; Jacek Kossut
Название: Introduction to the Physics of Diluted Magnetic Semiconductors
ISBN: 3642266738 ISBN-13(EAN): 9783642266737
Издательство: Springer
Рейтинг:
Цена: 22201.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: As materials whose semiconducting properties are influenced by magnetic ions, DMSs are central to the emerging field of spintronics. This volume focuses both on basic physical mechanisms (e.g. carrier-ion and ion-ion interactions), and resulting phenomena.