Описание: This book covers advances in the optical control of coherence in excitonic and polaritonic systems as models for complex semiconductor dynamics with the goal of quantum coherence control in solid-state. Includes coverage of optical control of spin coherence.
Описание: This book covers advances in the optical control of coherence in excitonic and polaritonic systems as models for complex semiconductor dynamics with the goal of quantum coherence control in solid-state. Includes coverage of optical control of spin coherence.
Автор: Gyu-Chul Yi Название: Semiconductor Nanostructures for Optoelectronic Devices ISBN: 3642439667 ISBN-13(EAN): 9783642439667 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book summarizes the current state of semiconductor nanodevice development, examining nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene and describing their device applications.
Автор: Toropov Alexey A Название: Plasmonic Effects in Metal-Semiconductor Nanostructures ISBN: 0199699313 ISBN-13(EAN): 9780199699315 Издательство: Oxford Academ Рейтинг: Цена: 16632.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This vibrant collected volume considers the question: how, exactly, did the relationship between trade and religion develop historically? Examining a wide range of commercial exchanges across religious boundaries around the Mediterranean Sea and the Atlantic and Indian Oceans during the second millennium, it offers a variety of perspectives on this intriguing and surprisingly neglected subject.
Автор: Klimov Название: Quantum Confined Semiconductor Nanostructures ISBN: 1558996745 ISBN-13(EAN): 9781558996748 Издательство: Cambridge Academ Рейтинг: Цена: 3960.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Автор: Ndebeka-Bandou Camille, Carosella Francesca & Bast Название: Quantum States And Scattering In Semiconductor Nanostructures ISBN: 1786343010 ISBN-13(EAN): 9781786343017 Издательство: World Scientific Publishing Рейтинг: Цена: 15523.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
This book is an introduction to quantum states and of their scattering in semiconductor nanostructures. Written with exercises and detailed solutions, it is designed to enable readers to start modelling actual electron states and scattering in nanostructures. It first looks at practical aspects of quantum states and emphasises the variational and perturbation approaches. Following this there is analysis of quasi two-dimensional materials, including discussion of the eigenstates of nanostructures, scattering mechanisms and their numerical results.
Focussing on practical applications, this book moves away from standard discourse on theory and provides students of physics, nanotechnology and materials science with the opportunity to fully understand the electronic properties of nanostructures.
Автор: Ndebeka-Bandou Camille, Carosella Francesca & Bast Название: Quantum States And Scattering In Semiconductor Nanostructures ISBN: 1786343029 ISBN-13(EAN): 9781786343024 Издательство: World Scientific Publishing Рейтинг: Цена: 9504.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
This book is an introduction to quantum states and of their scattering in semiconductor nanostructures. Written with exercises and detailed solutions, it is designed to enable readers to start modelling actual electron states and scattering in nanostructures. It first looks at practical aspects of quantum states and emphasises the variational and perturbation approaches. Following this there is analysis of quasi two-dimensional materials, including discussion of the eigenstates of nanostructures, scattering mechanisms and their numerical results.
Focussing on practical applications, this book moves away from standard discourse on theory and provides students of physics, nanotechnology and materials science with the opportunity to fully understand the electronic properties of nanostructures.
Автор: Latyshev, Alexander V. Название: Advances in Semiconductor Nanostructures ISBN: 0128105127 ISBN-13(EAN): 9780128105122 Издательство: Elsevier Science Рейтинг: Цена: 23244.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications focuses on the physical aspects of semiconductor nanostructures, including growth and processing of semiconductor nanostructures by molecular-beam epitaxy, ion-beam implantation/synthesis, pulsed laser action on all types of III-V, IV, and II-VI semiconductors, nanofabrication by bottom-up and top-down approaches, real-time observations using in situ UHV-REM and high-resolution TEM of atomic structure of quantum well, nanowires, quantum dots, and heterostructures and their electrical, optical, magnetic, and spin phenomena.
The very comprehensive nature of the book makes it an indispensable source of information for researchers, scientists, and post-graduate students in the field of semiconductor physics, condensed matter physics, and physics of nanostructures, helping them in their daily research.
Описание: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures.
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