Electronic Properties of Graphene Heterostructures with Hexagonal Crystals, John R. Wallbank
Автор: M. Willander Название: Silicon-Germanium Strained Layers and Heterostructures, ISBN: 0127521836 ISBN-13(EAN): 9780127521831 Издательство: Elsevier Science Рейтинг: Цена: 29476.00 р. Наличие на складе: Поставка под заказ.
Описание: The study of Silicone Germanium strained layers has implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. This work describes its developments in technology and modelling. It also includes a bibliography of over 400 papers providing an overview of the subject.
Автор: Bimberg Название: Quantum Dot Heterostructures ISBN: 0471973882 ISBN-13(EAN): 9780471973881 Издательство: Wiley Рейтинг: Цена: 58283.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book presents a comprehensive overview of the most recent advances in the field, including the way such structures are grown, how experiments on the structures have clarified long-standing theoretical predictions, how the structures are characterized, and the performance of devices developed from the structures.
Описание: The theoretical basis and the relevant experimental knowledge underlying our present understanding of the electrical and optical properties of semiconductor heterostructures.
Описание: This book mainly focuses on the investigation of the electric-field control of magnetism and spin-dependent transportation based on a Co40Fe40B20(CoFeB)/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(PMN-PT) multiferroic heterostructure.
Автор: L.L. Chang; K. Ploog Название: Molecular Beam Epitaxy and Heterostructures ISBN: 940108744X ISBN-13(EAN): 9789401087445 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of the NATO Advanced Study Institute on Molecular Beam Epitaxy (MBE) and Heterostructures, Erice, Italy, March 7-19, 1983
Автор: Y. Nissim; Emmanuel Rosencher Название: Heterostructures on Silicon: One Step Further with Silicon ISBN: 940106900X ISBN-13(EAN): 9789401069007 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of the NATO Advanced Research Workshop, Cargese, Corsica, France, May 15-20, 1988
Автор: Satishchandra B. Ogale Название: Thin Films and Heterostructures for Oxide Electronics ISBN: 1441938389 ISBN-13(EAN): 9781441938381 Издательство: Springer Рейтинг: Цена: 26120.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Oxides form a broad subject area of research and technology development which encompasses different disciplines such as materials science, solid state chemistry, physics etc.
Автор: Mitin Vladimir V., Mitin V. V., Kochelap Viacheslav Название: Quantum Heterostructures: Microelectronics and Optoelectronics ISBN: 0521636353 ISBN-13(EAN): 9780521636353 Издательство: Cambridge Academ Рейтинг: Цена: 15523.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides a detailed description of the key physical and engineering principles of quantum semiconductor heterostructures. Blending important concepts from physics, materials science, and electrical engineering, it also explains clearly the behaviour and operating features of modern microelectronic and optoelectronic devices.
Автор: Eougenious L. Ivchenko; Grigory Pikus Название: Superlattices and Other Heterostructures ISBN: 3642644937 ISBN-13(EAN): 9783642644931 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Superlattices and Other Heterostructures deals with optical properties of superlattices and quantum-well structures with emphasis on phenomena governed by crystal symmetries. After a brief introduction to group theory and symmetries, methods to calculate spectra of electrons, excitions and phonons in heterostructures are discussed. Further chapters cover absorption and reflection of light under interband transitions, cyclotron and electron spin-resoncance, light scattering by free and bound carriers and by optical and acoustic phonons, polarized photoluminescence, optical spin orientation of electrons and excitions, and nonlinear optical and photogalvanic effects.
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