X-Ray Absorption Spectroscopy of Semiconductors, Claudia S. Schnohr; Mark C. Ridgway
Автор: Khler Anna Название: Electronic Processes in Organic Semiconductors ISBN: 3527332928 ISBN-13(EAN): 9783527332922 Издательство: Wiley Рейтинг: Цена: 10288.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The first advanced textbook to focus on the fundamentals in a brief, coherent and comprehensive way. Based on one of the author`s proven lecture course, it prepares students to understand the many multi-authored books available that discuss a particular aspect in more detail.
Автор: Bengt G. Svensson Название: Oxide Semiconductors,88 ISBN: 012396489X ISBN-13(EAN): 9780123964892 Издательство: Elsevier Science Рейтинг: Цена: 28633.00 р. Наличие на складе: Поставка под заказ.
Описание: Suitable for physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry.
Описание: This Third Edition Has Been Extended Considerably To Incorporate More Information On Instrument Influences On The Interpretation Of X-Ray Scattering Profiles And Reciprocal Space Maps. Another Significant Inclusion Is On The Scattering From Powder Samples, Covering A New Theoretical Approach That Explains Features That Conventional Theory Cannot. The New Edition Includes Some Of The Latest Methodologies And Theoretical Treatments, Including The Latest Thinking On Dynamical Theory And Diffuse Scattering. Recent Advances In Detectors Also Present New Opportunities For Rapid Data Collection And Some Very Different Approaches In Data Collection Techniques; The Possibilities Associated With These Advances Will Be Included.This Edition Should Be Of Interest To Those Who Use X-Ray Scattering To Understand More About Their Samples, So That They Can Make A Better Judgment Of The Parameter And Confidence Levels In Their Analyses, And How The Combination Of Instrument, Sample And Detection Should Be Considered As A Whole To Ensure This.
Автор: Suresh Jain; Magnus Willander; R. Van Overstraeten Название: Compound Semiconductors Strained Layers and Devices ISBN: 1461370000 ISBN-13(EAN): 9781461370000 Издательство: Springer Рейтинг: Цена: 26122.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Knowledge of the refractive indices and absorption coefficients of semiconductors is especially import in the design and analysis of optical and optoelectronic devices.
Описание: This thesis breaks new ground in the physics of photonic circuits for quantum optical applications, offering the first demonstration of a spin-photon interface using an all-waveguide geometry, and a number of other highly novel contributions to the field.
Автор: G.W. Cullen; V.S. Ban; C.C. Wang; S. Berkman; J. B Название: Heteroepitaxial Semiconductors for Electronic Devices ISBN: 1461262690 ISBN-13(EAN): 9781461262695 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Z. Borisova Название: Glassy Semiconductors ISBN: 147570853X ISBN-13(EAN): 9781475708530 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Research on glassy semiconductors continues to expand every year. In 1972 the Leningrad University published the author`s books [3] dealing with the regularities of glass formation in cha1cogenide systems and containing a systematized exposition of some physicochemical properties of glassy cha1cogenide semiconductors.
Автор: D. Shaw Название: Atomic Diffusion in Semiconductors ISBN: 1461586380 ISBN-13(EAN): 9781461586388 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Notwithstanding the importance of diffusion in the preparative processes of semiconductor structures and samples, the diffusion based aspects have acquired an empirical outlook verging almost on alchemy.
Автор: Mikla, Victor V. Название: Trap Level Spectroscopy in Amorphous Semiconductors ISBN: 0323165036 ISBN-13(EAN): 9780323165037 Издательство: Elsevier Science Рейтинг: Цена: 18275.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Although amorphous semiconductors have been studied for over four decades, many of their properties are not fully understood. This book discusses not only the most common spectroscopic techniques but also describes their advantages and disadvantages.
Автор: Alexander A. Demkov; Agham B. Posadas Название: Integration of Functional Oxides with Semiconductors ISBN: 1461493196 ISBN-13(EAN): 9781461493198 Издательство: Springer Рейтинг: Цена: 19564.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The book incorporates both theoretical and experimental advances to explore the heteroepitaxy of tuned functional oxides and semiconductors to identify material, device and characterization challenges and to present the incredible potential in the realization of multifunctional devices and monolithic integration of materials and devices.
Автор: Viktor S. Vavilov Название: Effects of Radiation on Semiconductors ISBN: 1489927220 ISBN-13(EAN): 9781489927224 Издательство: Springer Рейтинг: Цена: 13060.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The effects of electromagnetic radiation and high-energy par- ticles on semiconductors can be divided into two main processes: (a) the excitation of electrons (the special case is internal ioniza- tion, i. e., the generation of excess charge carriers); and(b) dis- turbance of the periodic structure of the crystal, i. e., the forma- tion of structural radiation defects. Naturally, investigations of the effects of radiation on semiconductors cannot be considered in isolation. Thus, for example, the problern of radiation de- fects is part of the generalproblern of crystal lattice defects and the influence of such defects on the processes occurring in semi- conductors. The same is true of photoelectric and similar phe- nomena where the action of the radiation is only the start of a complex chain of nonequilibrium electronprocesses. Nevertheless, particularly from the point of view of the experimental physicist, the radiation effects discussed in the present book have inter- esting features: several types of radiation may produce the same resul t (for example, ionization by photons and by charged particles) or one type of radiation may produce several effects (ionization and radiation -defect formation). The aim of the author was to consider the most typical prob- lems. The subjects discussed differ widely from one another in the extent to which they have been investigated.
ООО "Логосфера " Тел:+7(495) 980-12-10 www.logobook.ru
