Описание: Properties of wave localization play a decisive role both in applications of engineered microstructures and in the detection of cracks and flaws.
Описание: to Wave Scattering, Localization and Mesoscopic Phenomena Second Edition With 72 Figures 123 ProfessorPingSheng Hong Kong University of Science and Technology, Department of Physics Clear Water Bay, Kowloon, Hong Kong E-mail: sheng@ust. hk Series Editors: ProfessorRobertHull Professor Jurgen Parisi ] University of Virginia Universitat Oldenburg, Fachbereich Physik Dept. of Materials Science and Engineering Abt. Energie- und Halbleiterforschung Thornton Hall Carl-von-Ossietzky-Strasse 9-11 Charlottesville, VA 22903-2442, USA 26129 Oldenburg, Germany ProfessorR. M. Osgood, Jr. Professor Hans Warlimont Microelectronics Science Laboratory Institut fur ] Festkor ] per- Department of Electrical Engineering und Werkstofforschung, Columbia University Helmholtzstrasse 20 Seeley W. Mudd Building 01069 Dresden, Germany New York, NY 10027, USA ISSN 0933-033X ISBN-10 3-540-29155-5 Springer Berlin Heidelberg New York ISBN-13 978-3-540-29155-8 Springer Berlin Heidelberg New York LibraryofCongressControlNumber: 2006925436 This work is subject to copyright. All rights are reserved, whether the whole or part of the material is concerned, specif ically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproductiononmicrof ilmorinanyotherway, andstorageindatabanks. Duplicationofthispublicationor parts thereof is permitted only under the provisions of the German Copyright Law of September 9, 1965, in its current version, and permission for use must always be obtained from Springer. Violations are liable to prosecution under the German Copyright Law. Springer is a part of Springer Science+Business Media. springeronline. com (c) Springer-Verlag Berlin Heidelberg 2006 Printed in Germany The use of general descriptive names, registered names, trademarks, etc.
Описание: This well-structured book presents numerical simulations of shear localization in granular materials. The book uses a hypoplastic constitutive model enhanced by a characteristic length of the micro-structure in the form of a mean grain diameter.
Автор: Alexander F. Vakakis Название: Normal Modes and Localization in Nonlinear Systems ISBN: 9048157153 ISBN-13(EAN): 9789048157150 Издательство: Springer Рейтинг: Цена: 19589.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The nonlinear normal modes of a parametrically excited cantilever beam are constructed by directly applying the method of multiple scales to the governing integral-partial differential equation and associated boundary conditions.
Описание: As a result of the numerical simulation of multidimensional gas dynamics problems on a computer, the output information is obtained in the form of immense arrays of numerical data.
Автор: Allen Goldman Название: Percolation, Localization, and Superconductivity ISBN: 1461593964 ISBN-13(EAN): 9781461593966 Издательство: Springer Рейтинг: Цена: 6986.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The study of the effects of dimensional ity and disorder on phase transitions, electronic transport, and superconductivity has become an important field of research in condensed matter physics.
Автор: Ioannis Chremmos; Otto Schwelb; Nikolaos Uzunoglu Название: Photonic Microresonator Research and Applications ISBN: 1441917438 ISBN-13(EAN): 9781441917430 Издательство: Springer Рейтинг: Цена: 28734.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book details how to design and fabricate microresonators. It covers the latest in microresonator research and discusses them in photonic crystals, microsphere circuits and sensors. It includes application-oriented examples.
Автор: Hellmut Fritzche Название: Localization and Metal-Insulator Transitions ISBN: 1461295211 ISBN-13(EAN): 9781461295211 Издательство: Springer Рейтинг: Цена: 16979.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This volume and its two companion volumes, entitled Tetrahedrally-Bonded Amorphous Semiconductors and Physics of Disordered Materials, are our way of paying special tribute to Sir Nevill Mott and to express our heartfelt wishes to him on the occasion of his eightieth birthday.
ООО "Логосфера " Тел:+7(495) 980-12-10 www.logobook.ru