Analysis and Synthesis of MOS Translinear Circuits, Remco J. Wiegerink

Автор: Vasant B. Rao; David V. Overhauser; Timothy N. Tri
Название: Switch-Level Timing Simulation of MOS VLSI Circuits
ISBN: 1461289637 ISBN-13(EAN): 9781461289630
Издательство: Springer
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Цена: 23058.00 р.
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Описание: Only two decades ago most electronic circuits were designed with a slide-rule, and the designs were verified using breadboard techniques. Today a wide range of tools exist for analYSiS, deSign, and verification, and expert systems and synthesis tools are rapidly emerging.

Автор: Vasant B. Rao; David V. Overhauser; Timothy N. Tri
Название: Switch-Level Timing Simulation of MOS VLSI Circuits
ISBN: 0898383021 ISBN-13(EAN): 9780898383027
Издательство: Springer
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Цена: 23757.00 р.
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Описание: Only two decades ago most electronic circuits were designed with a slide-rule, and the designs were verified using breadboard techniques. Today a wide range of tools exist for analYSiS, deSign, and verification, and expert systems and synthesis tools are rapidly emerging.

Автор: Christopher Michael; Mohammed Ismail
Название: Statistical Modeling for Computer-Aided Design of MOS VLSI Circuits
ISBN: 079239299X ISBN-13(EAN): 9780792392996
Издательство: Springer
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Цена: 20956.00 р.
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Описание: Describes a statistical circuit simulation and optimization environment for VLSI circuit designers. This text also describes a CAD tool which accurately models and simulates the effect of device and circuit characteristics in both intra- and inter-die process variabiliy on analog/digital circuits.

Автор: Rolf Unbehauen; Andrzej Cichocki
Название: MOS Switched-Capacitor and Continuous-Time Integrated Circuits and Systems
ISBN: 3642836798 ISBN-13(EAN): 9783642836794
Издательство: Springer
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Цена: 19591.00 р.
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Описание: The purpose of this book is to present analysis and design principles, procedures and techniques of analog integrated circuits which are to be implemented in MOS (metal oxide semiconductor) technology.

Автор: P. Antognetti; D.A. Antoniadis; Robert W. Dutton;
Название: Process and Device Simulation for MOS-VLSI Circuits
ISBN: 9400968442 ISBN-13(EAN): 9789400968448
Издательство: Springer
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Описание: Proceedings of the NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits, Sogesta, Urbino, Italy, July 12-23, 1982