Описание: Properties of wave localization play a decisive role both in applications of engineered microstructures and in the detection of cracks and flaws.
Описание: This book exposes a number of mathematical models for fracture of growing difficulty.
Автор: Bernhard Kramer; Gerd Bergmann; Yvan Bruynseraede Название: Localization, Interaction, and Transport Phenomena ISBN: 3642825184 ISBN-13(EAN): 9783642825187 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: When we first had the idea of organizing the International Conference on Localization, Interaction, and Transport Phenomena in Impure Metals we expected to bring together at most a hundred physicists.
Описание: Also many of the different constitutive damage models that have recently appeared in the literature and the different approaches to this topic are presented, making them easily accessible to researchers and graduate students in civil engineering, mechanical engineering, engineering mechanics, aerospace engineering, and material science.
Автор: Alexander F. Vakakis Название: Normal Modes and Localization in Nonlinear Systems ISBN: 9048157153 ISBN-13(EAN): 9789048157150 Издательство: Springer Рейтинг: Цена: 19589.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The nonlinear normal modes of a parametrically excited cantilever beam are constructed by directly applying the method of multiple scales to the governing integral-partial differential equation and associated boundary conditions.
Описание: This book bridges three closely related research fields of nanoplasmonics, metamaterials and light localization in complex media. The goal is to share recent progress, identify critical problems and provide promising solutions for the next generation of photonic functionality. Topics include: metamaterials and superlenses; metamaterials; and optical nanoantennas and decay engineering.
Автор: Friedemar Kuchar; Helmut Heinrich; G?nther Bauer Название: Localization and Confinement of Electrons in Semiconductors ISBN: 3642842747 ISBN-13(EAN): 9783642842740 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: A particular intention of this book is to present relevant introductory articles alongside the most recent research reports, all written by experts in the fields of localization and condensation of electrons in semiconductors, the quantum Hall effect, lateral superlattices, ballistic transport, etc.
Описание: A crucial element of structural and continuum mechanics, stability theory has limitless applications in civil, mechanical, aerospace, naval, and nuclear engineering. This text presents a comprehensive exposition of the principles and applications of stability analysis. It is suitable for graduate students.
Автор: Zenon Mr?z; Dieter Weichert; Stanislaw Dorosz Название: Inelastic Behaviour of Structures under Variable Loads ISBN: 0792333977 ISBN-13(EAN): 9780792333975 Издательство: Springer Рейтинг: Цена: 41787.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This collection of papers is a state of the art presentation of theories and methods related to the problem of the behaviour of mechanical structures under variable loads beyond their elastic limit In particular, the problems of shakedown, ratchetting, transient and asymptotic cyclic states are addressed.
Автор: T. Wolfram Название: Inelastic Electron Tunneling Spectroscopy ISBN: 3642812309 ISBN-13(EAN): 9783642812309 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: In addition to its role in surface studies, inelastic tunneling has proved extremely valuable for the study of the electronic properties of thin metallic films, and the recent discovery of light emission from inelastic tunneling promises to be of some importance in the area of device physics.
Описание: This book presents studies on the inelastic behavior of materials and structures under monotonic and cyclic loads. The various models are based on different approaches and methods and scaling aspects are taken into account. In addition to purely phenomenological models, the book also presents mechanisms-based approaches.
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