Application of High Magnetic Fields in Semiconductor Physics, G. Landwehr
Автор: Sze, Simon M. Название: Physics of semiconductor devices ISBN: 0471143235 ISBN-13(EAN): 9780471143239 Издательство: Wiley Рейтинг: Цена: 22070.00 р. Наличие на складе: Поставка под заказ.
Описание: A textbook and reference in the field of semiconductor devices that reflects the advances in device concepts and performance. It offers engineers, research scientists, faculty, and students a practical basis for understanding the important devices in use.
Автор: Gottfried Landwehr Название: High Magnetic Fields in Semiconductor Physics III ISBN: 3642844103 ISBN-13(EAN): 9783642844102 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Proceedings of the International Conference, Wurzburg, Fed. Rep. of Germany, July 30 - August 3, 1990
Автор: Gottfried Landwehr Название: High Magnetic Fields in Semiconductor Physics II ISBN: 364283812X ISBN-13(EAN): 9783642838125 Издательство: Springer Рейтинг: Цена: 22203.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This volume contains contributions presented at the International Conference "The Application of High Magnetic Fields in Semiconductor Physics", which was held at the University of Wiirzburg from August 22 to 26, 1988. On the contrary, the application of high magnetic fields to semiconductors has grown substantially during the recent past.
Автор: S. Chikazumi; N. Miura Название: Physics in High Magnetic Fields ISBN: 3642815979 ISBN-13(EAN): 9783642815973 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This volume represents the Proceedings of the Oji International Seminar on the Application of High Magnetic Fields in the Physics of Semiconductors and Magnetic Materials, which was held at the Hakone Kanko Hotel, Hakone, Japan, from 10 to 13 September 1980.
Описание: As we know, the accumulation-type space charge region is highly conductive, which is an important property for highly efficient charge generation in their application as charge injector and charge generation layer in OLEDs.
Автор: Kupervasser, Oleg Название: Application of New Cybernetics in Physics ISBN: 0128128011 ISBN-13(EAN): 9780128128015 Издательство: Elsevier Science Рейтинг: Цена: 19875.00 р. Наличие на складе: Поставка под заказ.
Описание:
Application of New Cybernetics in Physics describes the application of new cybernetics to physical problems and the resolution of basic physical paradoxes by considering external observer influence. This aids the reader in solving problems that were solved incorrectly or have not been solved.
Three groups of problems of the new cybernetics are considered in the book:
(a) Systems that can be calculated based on known physics of subsystems. This includes the external observer influence calculated from basic physical laws (ideal dynamics) and dynamics of a physical system influenced even by low noise (observable dynamics).
(b) Emergent systems. This includes external noise from the observer by using the black box model (complex dynamics), external noise from the observer by using the observer's intuition (unpredictable dynamics), defining boundaries of application of scientific methods for system behavior prediction, and the role of the observer's intuition for unpredictable systems.
(c) Methods for solution of basic physical paradoxes by using methods of the new cybernetics: the entropy increase paradox, Schr dinger's cat paradox (wave package reduction in quantum mechanics), the black holes information paradox, and the time wormholes grandfather paradox. All of the above paradoxes have the same resolution based on the principles of new cybernetics. Indeed, even a small interaction of an observer with an observed system results in their time arrows' alignment (synchronization) and results in the paradox resolution and appearance of the universal time arrow.
Provides solutions to the basic physical paradoxes and demonstrates their practical actuality for modern physics
Describes a wide class of molecular physics and kinetic problems to present semi-analytical and semi-qualitative calculations of solvation, flame propagation, and high-molecular formation
Demonstrates the effectiveness in application to complex molecular systems and other many-component objects
Includes numerous illustrations to support the text
Автор: E. D. Haidemenakis Название: Physics of Solids in Intense Magnetic Fields ISBN: 1489955100 ISBN-13(EAN): 9781489955104 Издательство: Springer Рейтинг: Цена: 6986.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: J.S. Yuan; Juin Jei Liou Название: Semiconductor Device Physics and Simulation ISBN: 1489919066 ISBN-13(EAN): 9781489919069 Издательство: Springer Рейтинг: Цена: 23508.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: photonic devices such as light- emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.
Автор: Gottfried Landwehr Название: High Magnetic Fields in Semiconductor Physics ISBN: 3642831168 ISBN-13(EAN): 9783642831164 Издательство: Springer Рейтинг: Цена: 6986.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: High magnetic fields have been an important tool in semiconductor physics for a long time. For the area of high magnetic fields applied in semiconductor physics recent results are discussed, and the state-of-the-art is reviewed. Special attention has been paid to the rapidly growing field of semimagnetic semiconductors.
Описание: In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature.
Автор: V.Ya. Frenkel; V.M. Tuchkevich Название: Semiconductor Physics ISBN: 1461578426 ISBN-13(EAN): 9781461578420 Издательство: Springer Рейтинг: Цена: 15672.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: I am happy indeed to write a foreword to this book. Since it was founded, the A. F. Ioffe Institute in Leningrad has been in the forefront of semiconductor research. I visited it in 1934, and vividly remember A -. F. Ioffe himself and J. Frenkel and their kindness to me, and to others attending the meeting to celebrate the hundredth anniversary of Mendeleev. In the last years my own work on non-crystalline semiconductors has been strongly influenced by the work of B. T. Kolomiets and his co-workers. The English-speaking world should know the great Institute better, and this book will, I am sure, help this to happen. Nevill Mott Cambridge, June 1985 v Contents INTRODUCTORY PART Abram Fyodorovich Ioffe (29th October 1880 - 14th October 1960) 3 V. M. Tuchkevich and V. Ya. Frenkel Semiconductors: A New Material for Electrical Engineering 11 A. F. Ioffe EXPERIMENTAL PART Photovoltaic Solar Energy Conversion 19 Zh. 1. Alferov New Optical Methods in Semiconductor Research 37 B. P. Zakharchenya Reemission, Quantum Efficiency and Lifetimes of Radiative Recombination in A3BS Semiconductors and Heterostructures 53 D. Z. Garbuzov Interacting Excitons in Germanium and Silicon 87 P. D. Altukhov, V. M. Asnin and A. A. Rogachev Liquid Semiconductors 129 A. R. Regel and A. A. Andreev Chalcogenide Vitreous Semiconductors 143 B. T. Kolomiets, E. A. Lebedev, V. M. Lyubin, T. F. Mazets and T. N. Mamontova vii viii CONTENTS Electron and Hole Recombination in Narrow Gap Semiconductors 169 B. L. Gelmont and V. I.
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