Theory of Defects in Semiconductors, David A. Drabold; Stefan Estreicher
Автор: Hans-Joachim Queisser; Johann-Martin Spaeth; Haral Название: Point Defects in Semiconductors and Insulators ISBN: 3642627226 ISBN-13(EAN): 9783642627224 Издательство: Springer Рейтинг: Цена: 25155.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap- peared about 10 years ago.
Автор: J. Chikawa; K. Sumino; K. Wada Название: Defects and Properties of Semiconductors ISBN: 9401086168 ISBN-13(EAN): 9789401086165 Издательство: Springer Рейтинг: Цена: 12157.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication.
Автор: Hans-Joachim Queisser; Johann-Martin Spaeth; Haral Название: Point Defects in Semiconductors and Insulators ISBN: 3540426957 ISBN-13(EAN): 9783540426950 Издательство: Springer Рейтинг: Цена: 34937.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap- peared about 10 years ago.
Автор: Victor Gloumov; Victor A. Perevostchikov; Vladimir Название: Gettering Defects in Semiconductors ISBN: 3642065708 ISBN-13(EAN): 9783642065705 Издательство: Springer Рейтинг: Цена: 30606.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Lucia Romano Название: Defects in Semiconductors,91 ISBN: 0128019352 ISBN-13(EAN): 9780128019351 Издательство: Elsevier Science Рейтинг: Цена: 28633.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields.
The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths.
Автор: Khler Anna Название: Electronic Processes in Organic Semiconductors ISBN: 3527332928 ISBN-13(EAN): 9783527332922 Издательство: Wiley Рейтинг: Цена: 10288.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The first advanced textbook to focus on the fundamentals in a brief, coherent and comprehensive way. Based on one of the author`s proven lecture course, it prepares students to understand the many multi-authored books available that discuss a particular aspect in more detail.
Автор: Fischetti, Massimo V. Vandenberghe, William G. Aboud, Shela Название: Advanced physics of electron transport in semiconductors and nanostructures ISBN: 3319011006 ISBN-13(EAN): 9783319011004 Издательство: Springer Рейтинг: Цена: 15372.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Advanced Physics of Semiconductors
Автор: Jimenez Название: Spectroscopic Analysis of Optoelectronic Semiconductors ISBN: 3319423479 ISBN-13(EAN): 9783319423470 Издательство: Springer Рейтинг: Цена: 16979.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book deals with standard spectroscopic techniques which can be used to analyze semiconductor samples or devices, in both, bulk, micrometer and submicrometer scale. The book aims helping experimental physicists and engineers to choose the right analytical spectroscopic technique in order to get specific information about their specific demands. For this purpose, the techniques including technical details such as apparatus and probed sample region are described. More important, also the expected outcome from experiments is provided. This involves also the link to theory, that is not subject of this book, and the link to current experimental results in the literature which are presented in a review-like style. Many special spectroscopic techniques are introduced and their relationship to the standard techniques is revealed. Thus the book works also as a type of guide or reference book for people researching in optical spectroscopy of semiconductors.
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