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Ferroelectric Memories, James F. Scott


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Автор: James F. Scott
Название:  Ferroelectric Memories
ISBN: 9783642085659
Издательство: Springer
Классификация:




ISBN-10: 3642085652
Обложка/Формат: Paperback
Страницы: 248
Вес: 0.38 кг.
Дата издания: 15.12.2010
Серия: Springer Series in Advanced Microelectronics
Язык: English
Размер: 234 x 156 x 14
Основная тема: Engineering
Ссылка на Издательство: Link
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Поставляется из: Германии
Описание: This is the first comprehensive book on ferroelectric memories which contains chapters on device design, processing, testing, and device physics, as well as on breakdown, leakage currents, switching mechanisms, and fatigue. State-of-the-art device designs are included and illustrated among the books many figures.


Nanoscale Phenomena in Ferroelectric Thin Films

Автор: Seungbum Hong
Название: Nanoscale Phenomena in Ferroelectric Thin Films
ISBN: 1461347718 ISBN-13(EAN): 9781461347712
Издательство: Springer
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Цена: 20962.00 р.
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Описание: This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. The first part under the title of electrical characterization in nanoscale ferroelectric capacitors starts with Chapter 1, "Testing and characterization of ferroelectric thin film capacitors," written by Dr. I.

Electric-Field Control of Magnetization and Electronic Transport in Ferromagnetic/Ferroelectric Heterostructures

Автор: Sen Zhang
Название: Electric-Field Control of Magnetization and Electronic Transport in Ferromagnetic/Ferroelectric Heterostructures
ISBN: 3642548385 ISBN-13(EAN): 9783642548383
Издательство: Springer
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Цена: 18167.00 р.
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Описание: This book mainly focuses on the investigation of the electric-field control of magnetism and spin-dependent transportation based on a Co40Fe40B20(CoFeB)/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(PMN-PT) multiferroic heterostructure.

Ferroelectric Random Access Memories

Автор: Hiroshi Ishiwara; Masanori Okuyama; Yoshihiro Arim
Название: Ferroelectric Random Access Memories
ISBN: 3540407189 ISBN-13(EAN): 9783540407188
Издательство: Springer
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Цена: 36570.00 р.
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Описание: The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects;

Ferroelectric Random Access Memories

Автор: Hiroshi Ishiwara; Masanori Okuyama; Yoshihiro Arim
Название: Ferroelectric Random Access Memories
ISBN: 3642073840 ISBN-13(EAN): 9783642073847
Издательство: Springer
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Цена: 36570.00 р.
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Описание: The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects;

Tunable Multiband Ferroelectric Devices for Reconfigurable RF-Frontends

Автор: Yuliang Zheng
Название: Tunable Multiband Ferroelectric Devices for Reconfigurable RF-Frontends
ISBN: 3642357792 ISBN-13(EAN): 9783642357794
Издательство: Springer
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Цена: 18284.00 р.
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Описание: This book surveys adapted technologies of material synthesis, film deposition and multilayer circuitry, plus tunable multiband antennas, tunable impedance matching networks and tunable integrated waveguide filters built on low-cost ferroelectric thick-films.

Magnetic, Ferroelectric, and Multiferroic Metal Oxides

Автор: D. Stojanovic, Biljana
Название: Magnetic, Ferroelectric, and Multiferroic Metal Oxides
ISBN: 0128111801 ISBN-13(EAN): 9780128111802
Издательство: Elsevier Science
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Цена: 26444.00 р.
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Описание:

Magnetic, Ferroelectric, and Multiferroic Metal Oxides covers the fundamental and theoretical aspects of ferroics and magnetoelectrics, their properties, and important technological applications, serving as the most comprehensive, up-to-date reference on the subject. Organized in four parts, Dr. Biljana Stojanovic leads expert contributors in providing the context to understand the material (Part I: Introduction), the theoretical and practical aspects of ferroelectrics (Part II: Ferroelectrics: From Theory, Structure and Preparation to Application), magnetic metal oxides (Part III: Magnetic Oxides: Ferromagnetics, Antiferromagnetics and Ferrimagnetics), multiferroics (Part IV: Multiferroic Metal Oxides) and future directions in research and application (Part V: Future of Metal Oxide Ferroics and Multiferroics).

As ferroelectric materials are used to make capacitors with high dielectric constant, transducers, and actuators, and in sensors, reed heads, and memories based on giant magnetoresistive effects, this book will provide an ideal source for the most updated information.

  • Addresses ferroelectrics, ferromagnetics and multiferroelectrics, providing a one-stop reference for researchers
  • Provides fundamental theory and relevant, important technological applications
  • Highlights their use in capacitors with high dielectric constant, transducers, and actuators, and in sensors, reed heads, and memories based on giant magnetoresistive effects
Thin Film Ferroelectric Materials and Devices

Автор: R. Ramesh
Название: Thin Film Ferroelectric Materials and Devices
ISBN: 0792399935 ISBN-13(EAN): 9780792399933
Издательство: Springer
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Цена: 26120.00 р.
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Описание: A compilation of research and development in two ferroelectric device technologies, namely ferroelectrics for Dynamic Random Access Memories (DRAMs) and Non-Volatile Ferroelectric Random Access Memories (NV-FRAMs). This book is useful to materials and device scientists, device and process engineers, students, and postdoctoral associates.

Ferroelectric Phenomena in Crystals

Автор: Boris A. Strukov; Arkadi P. Levanyuk
Название: Ferroelectric Phenomena in Crystals
ISBN: 364264340X ISBN-13(EAN): 9783642643408
Издательство: Springer
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Цена: 15672.00 р.
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Описание: The expansion of the application of ferroelectric crystals in engineering as well as of a number of fundamental problems of solid-state physics, which have not yet been solved and which bear a direct relation to ferro electricity, has lately stimulated much interest in the problem of ferroelectricity.

Multifunctional Polycrystalline Ferroelectric Materials

Автор: Lorena Pardo; Jes?s Ricote
Название: Multifunctional Polycrystalline Ferroelectric Materials
ISBN: 9400735324 ISBN-13(EAN): 9789400735323
Издательство: Springer
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Цена: 26120.00 р.
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Описание: Ceramics are key materials in many devices using piezoelectricity in numerous applications, but the ferroelectric nature of such ceramics is little understood. This book covers an array of topics on the processing and properties of ferroelectric materials.

Fatigue in Ferroelectric Ceramics and Related Issues

Автор: Doru Constantin Lupascu
Название: Fatigue in Ferroelectric Ceramics and Related Issues
ISBN: 3642073018 ISBN-13(EAN): 9783642073014
Издательство: Springer
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Цена: 19589.00 р.
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Описание: A major barrier to the introduction of ferroelectric devices into mass markets remains their limited reliability due to fatigue. The underlying physical and chemical mechanisms of this material fatigue phenomenon are extremely complex, and the relevant influences range from single-point defects to macroscopic boundary conditions.

Ferroelectric Domain Walls

Автор: Jill Guyonnet
Название: Ferroelectric Domain Walls
ISBN: 3319382772 ISBN-13(EAN): 9783319382777
Издательство: Springer
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Цена: 13059.00 р.
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Описание: Using the nano metric resolution of atomic force microscopy techniques, this work explores the rich fundamental physics and novel functionalities of domain walls in ferroelectric materials, the nano scale interfaces separating regions of differently oriented spontaneous polarization.

Ferroelectric Thin Films

Автор: Masanori Okuyama; Yoshihiro Ishibashi
Название: Ferroelectric Thin Films
ISBN: 3642063306 ISBN-13(EAN): 9783642063305
Издательство: Springer
Рейтинг:
Цена: 37594.00 р.
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Описание: Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics.


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