Описание: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures.
Автор: Latu-Romain Название: Silicon Carbide One-dimensional Nanostructures ISBN: 1848217978 ISBN-13(EAN): 9781848217973 Издательство: Wiley Рейтинг: Цена: 22010.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Dedicated to SiC-based 1D nanostructures, this book explains the properties and different growth methods of these nanostructures. It details carburization of silicon nanowires, a growth process for obtaining original Si-SiC core-shell nanowires and SiC nanotubes of high crystalline quality, thanks to the control of the siliconout-diffusion.
Introduction.- Growth mechanism of silicon nanowires.- Stability of silicon nanostructures.- Novel electronic properties of silicon nanostructures.- Summary and remarks.
Автор: Nobuyoshi Koshida Название: Device Applications of Silicon Nanocrystals and Nanostructures ISBN: 1489977376 ISBN-13(EAN): 9781489977373 Издательство: Springer Рейтинг: Цена: 22201.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This comprehensive, up-to-date book systematically covers recent developments in the technology of silicon nanocrystals and silicon nanostructures, where quantum-size effects are important. The chapters include a number of examples of device applications.
Автор: Vladimir V. Mitin, Viacheslav A. Kochelap, Mitra Dutta, Michael A. Stroscio Название: Introduction to Optical and Optoelectronic Properties of Nanostructures ISBN: 1108428142 ISBN-13(EAN): 9781108428149 Издательство: Cambridge Academ Рейтинг: Цена: 14731.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Get to grips with the fundamental properties of optical and optoelectronic nanostructures. This comprehensive guide is accessible for students and practitioners in disciplines such as nanoscience, physics, electrical engineering, and materials science, and includes detailed mathematical derivations, worked examples and end-of-chapter problems.
Автор: Schuster Название: Diffractive Optics for Thin-Film Silicon Solar Cells ISBN: 3319442775 ISBN-13(EAN): 9783319442778 Издательство: Springer Рейтинг: Цена: 15372.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
This thesis introduces a figure of merit for light trapping with photonic nanostructures and shows how different light trapping methods compare, irrespective of material, absorber thickness or type of nanostructure. It provides an overview of the essential aspects of light trapping, offering a solid basis for future designs.
Light trapping with photonic nanostructures is a powerful method of increasing the absorption in thin film solar cells. Many light trapping methods have been studied, but to date there has been no comprehensive figure of merit to compare these different methods quantitatively. This comparison allows us to establish important design rules for highly performing structures; one such rule is the structuring of the absorber layer from both sides, for which the authors introduce a novel and simple layer-transfer technique. A closely related issue is the question of plasmonic vs. dielectric nanostructures; the authors present an experimental demonstration, aided by a detailed theoretical assessment, highlighting the importance of considering the multipass nature of light trapping in a thin film, which is an essential effect that has been neglected in previous work and which allows us to quantify the parasitic losses.
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