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Device Physics for Engineering Design of Heavily Doped Regions in Pn-junction Silicon Solar Cells, Shibib Muhammed


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Автор: Shibib Muhammed
Название:  Device Physics for Engineering Design of Heavily Doped Regions in Pn-junction Silicon Solar Cells
ISBN: 9780530008134
Издательство: Dissertation Discovery Company
Классификация:
ISBN-10: 0530008130
Обложка/Формат: Hardcover
Страницы: 206
Вес: 0.77 кг.
Дата издания: 31.05.2019
Язык: English
Размер: 280 x 216 x 13
Читательская аудитория: General (us: trade)
Рейтинг:
Поставляется из: США
Описание: Abstract:

This dissertation presents a quantitative study of the physical mechanisms underlying the anomolously large recombination current experimentally observed in heavily doped regions of silicon pn-junction solar cells and bipolar transistors. The study includes a comparison of theoretical predictions with a variety of experimental observations in heavily doped silicon and silicon devices.

A major conclusion is that the simplest physical model that adequately describes the heavily doped regions must include Fermi- Dirac statistics, a phenomenological excess intrinsic carrier density (or deficit impurity concentration), Auger recombination in the bulk, and recombination at the surface. These mechanisms are incorporated in a first-order model useful in the design of silicon pn-junction solar cells. The accuracy of the first-order model is supported by comparing its results with the results of more detailed models and of a numerical analysis of the problem. Experimental data are presented that are consistent with the predictions of the first-order model and of the numerical solution.

Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, Device Physics for Engineering Design of Heavily Doped Regions in Pn-junction Silicon Solar Cells by Muhammed Ayman Shibib, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the universitys institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.



Device Physics for Engineering Design of Heavily Doped Regions in Pn-junction Silicon Solar Cells

Автор: Shibib Muhammed
Название: Device Physics for Engineering Design of Heavily Doped Regions in Pn-junction Silicon Solar Cells
ISBN: 0530008122 ISBN-13(EAN): 9780530008127
Издательство: Неизвестно
Рейтинг:
Цена: 12139.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: Abstract:

This dissertation presents a quantitative study of the physical mechanisms underlying the anomolously large recombination current experimentally observed in heavily doped regions of silicon pn-junction solar cells and bipolar transistors. The study includes a comparison of theoretical predictions with a variety of experimental observations in heavily doped silicon and silicon devices.

A major conclusion is that the simplest physical model that adequately describes the heavily doped regions must include Fermi- Dirac statistics, a phenomenological excess intrinsic carrier density (or deficit impurity concentration), Auger recombination in the bulk, and recombination at the surface. These mechanisms are incorporated in a first-order model useful in the design of silicon pn-junction solar cells. The accuracy of the first-order model is supported by comparing its results with the results of more detailed models and of a numerical analysis of the problem. Experimental data are presented that are consistent with the predictions of the first-order model and of the numerical solution.

Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "Device Physics for Engineering Design of Heavily Doped Regions in Pn-junction Silicon Solar Cells" by Muhammed Ayman Shibib, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.

Petroleum Fiscal Systems and Contracts

Автор: Mazeel Muhammed Abed
Название: Petroleum Fiscal Systems and Contracts
ISBN: 3836688522 ISBN-13(EAN): 9783836688529
Издательство: Неизвестно
Рейтинг:
Цена: 18950.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.


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