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Self-standing Substrates, Inamuddin.; Rajender Boddula; Abdullah M Asiri



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Автор: Inamuddin.; Rajender Boddula; Abdullah M Asiri   (Инамуддин)
Название:  Self-standing Substrates
Перевод названия: Инамуддин: Самообразующиеся субстраты
ISBN: 9783030295219
Издательство: Springer
Классификация:
ISBN-10: 3030295214
Обложка/Формат: Hardcover
Страницы: 368
Вес: 0.729 кг.
Дата издания: 02.01.2020
Серия: Engineering materials
Язык: English
Издание: 1st ed. 2020
Иллюстрации: 20 tables, color; 114 illustrations, color; 41 illustrations, black and white; viii, 368 p. 155 illus., 114 illus. in color.
Размер: 234 x 156 x 22
Читательская аудитория: Professional & vocational
Подзаголовок: Materials and applications
Ссылка на Издательство: Link
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Поставляется из: Германии
Описание: This book systematically describes free-standing films and self-supporting nanoarrays growing on rigid and flexible substrates, and discusses the numerous applications in electronics, energy generation and storage in detail.



Alkyne?Based Nanostructures on Silver Substrates

Автор: Raphael Hellwig
Название: Alkyne?Based Nanostructures on Silver Substrates
ISBN: 3030009963 ISBN-13(EAN): 9783030009960
Издательство: Springer
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Цена: 15372 р.
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Описание:

Acetylenic precursors are important reactants for creating carbon-based architectures via linkage reactions. While their capability of forming intermolecular bonds is well investigated in solution, very few systematic studies have been carried out to create alkyne-based nanostructures on metal substrates under ultra-high vacuum conditions. Synthesizing extended and regular carbon scaffolds requires a detailed knowledge of alkyne chemistry in order to control reaction pathways and limit unwanted side reactions. Using the bottom-up approach on metal surfaces, the authors establish protocols to fabricate regular architectures built up by the on-surface formation of selective organometallic and C-C bonds with thoughtfully designed alkyne-functionalized monomers. The structural and functional properties of the resulting organometallic and covalent nanostructures are characterized by means of scanning tunneling microscopy. The results open up new perspectives in the fields of heterogeneous catalysis and the on-surface synthesis of functional interfaces under mild reaction conditions.
Photonic Waveguide Components on Silicon Substrate

Автор: Swagata Samanta; Pallab Banerji; Pranabendu Gangul
Название: Photonic Waveguide Components on Silicon Substrate
ISBN: 9811513104 ISBN-13(EAN): 9789811513107
Издательство: Springer
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Цена: 6986 р.
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Описание: This book can be a useful reference for students, researchers, and fabrication engineers working in the areas of integrated optics, optical communications, laser technology and optical lithography for device manufacturing.

Oriented Crystallization on Amorphous Substrates

Автор: E.I. Givargizov
Название: Oriented Crystallization on Amorphous Substrates
ISBN: 030643122X ISBN-13(EAN): 9780306431227
Издательство: Springer
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Цена: 30039 р.
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Описание: i.e., they have been grown on a single-crystalline substrate, and principal trends, e.g., in the evolution of integrated circuits (lCs), have been based on continuing reduction in feature size and increase in the number of components per chip.

Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates

Автор: Li
Название: Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates
ISBN: 1605110388 ISBN-13(EAN): 9781605110387
Издательство: Cambridge Academ
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Цена: 9821 р.
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Описание: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Polymer brushes substrates techno

Название: Polymer brushes substrates techno
ISBN: 1138074977 ISBN-13(EAN): 9781138074972
Издательство: Taylor&Francis
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Цена: 13357 р.
Наличие на складе: Невозможна поставка.

Описание:

Polymer Brushes: Substrates, Technologies, and Properties covers various aspects of polymer brush technology, including synthesis, properties, performance, and applications. It presents both experimental details and theoretical insights to enable a better understanding of the brush system.

After an overview of polymer brush systems, the book discusses methods for grafting organic brushes from the surface of clay platelets and for the covalent grafting of PNIPAm brushes. It then describes ferrocene polymer brushes, nonfouling brushes on poly(ethylene terephthalate) film surfaces, brushes formed on the inner surface of cylindrical pores, and the "zipper brush" approach. The authors examine the use of scanning electrochemical microscopy for analyzing brushes and compare surface-controlled atom transfer radical polymerization and surface-controlled single-electron transfer living radical polymerization. They also explore the application of polymer brushes in the chromatographic separations of viruses and proteins and the suppression of proteins and cell adhesions. The text concludes with a look at how polymer brushes are synthesized by surface-initiated iniferter-mediated polymerization.

This book provides a one-stop reference on the various substrates and technologies used to synthesize polymer brushes. The hands-on information in the text will help readers choose the proper synthesis methods and materials for their system.

Oriented Crystallization on Amorphous Substrates

Автор: E.I. Givargizov
Название: Oriented Crystallization on Amorphous Substrates
ISBN: 1489925627 ISBN-13(EAN): 9781489925626
Издательство: Springer
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Цена: 26122 р.
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Описание: i.e., they have been grown on a single-crystalline substrate, and principal trends, e.g., in the evolution of integrated circuits (lCs), have been based on continuing reduction in feature size and increase in the number of components per chip.

Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates

Автор: Li
Название: Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates
ISBN: 1107408563 ISBN-13(EAN): 9781107408562
Издательство: Cambridge Academ
Цена: 4117 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Parasitic Substrate Coupling in High Voltage Integrated Circuits: Minority and Majority Carriers Propagation in Semiconductor Substrate

Автор: Buccella Pietro, Stefanucci Camillo, Kayal Maher
Название: Parasitic Substrate Coupling in High Voltage Integrated Circuits: Minority and Majority Carriers Propagation in Semiconductor Substrate
ISBN: 3030089762 ISBN-13(EAN): 9783030089764
Издательство: Springer
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Цена: 16769 р.
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Описание: This book introduces a new approach to model and predict substrate parasitic failures in integrated circuits with standard circuit design tools.The injection of majority and minority carriers in the substrate is a recurring problem in smart power ICs containing high voltage, high current switching devices besides sensitive control, protection and signal processing circuits.The injection of parasitic charges leads to the activation of substrate bipolar transistors. This book explores how these events can be evaluated for a wide range of circuit topologies. To this purpose, new generalized devices implemented in Verilog-A are used to model the substrate with standard circuit simulators. This approach was able to predict for the first time the activation of a latch-up in real circuits through post-layout SPICE simulation analysis.


Discusses substrate modeling and circuit-level simulation of parasitic bipolar device coupling effects in integrated circuits;
Includes circuit back-annotation of the parasitic lateral n-p-n and vertical p-n-p bipolar transistors in the substrate;
Uses Spice for simulation and characterization of parasitic bipolar transistors, latch-up of the parasitic p-n-p-n structure, and electrostatic discharge (ESD) protection devices;
Offers design guidelines to reduce couplings by adding specific protections.

Substrate Integrated Antennas and Arrays

Автор: Cheng
Название: Substrate Integrated Antennas and Arrays
ISBN: 1498714536 ISBN-13(EAN): 9781498714532
Издательство: Taylor&Francis
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Цена: 21054 р.
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Описание:

Substrate Integrated Antennas and Arrays provides a single source for cutting-edge information on substrate integrated circuits (SICs), substrate integrated waveguide (SIW) feeding networks, SIW slot array antennas, SIC traveling-wave antennas, SIW feeding antennas, SIW monopulse antennas, and SIW multibeam antennas. Inspired by the author's extensive research, this comprehensive book:

  • Describes a revolutionary SIC-based antenna technique with the potential to replace existing antenna technologies
  • Examines theoretical and experimental results connected to electrical and mechanical performance
  • Explains how to overcome difficulties in meeting bandwidth, gain, and efficiency specifications

Substrate Integrated Antennas and Arrays offers valuable insight into the state of the art of SIC and SIW antenna technologies, presenting research useful to the development of wireless communication base station antennas, portable microwave point-to-point systems, collision avoidance radars, conformal antennas, and satellite antennas.

Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET

Автор: Nabil Shovon Ashraf
Название: Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET
ISBN: 1681733870 ISBN-13(EAN): 9781681733876
Издательство: Eurospan
Рейтинг:
Цена: 10834 р.
Наличие на складе: Поставка под заказ.

Описание: Low substrate/lattice temperature (< 300 K) operation of $n$-MOSFET has been effectively studied by device research and integration professionals in CMOS logic and analog products from the early 1970s. The author of this book previously composed an e-book in this area where he and his co-authors performed original simulation and modeling work on MOSFET threshold voltage and demonstrated that through efficient manipulation of threshold voltage values at lower substrate temperatures, superior degrees of reduction of subthreshold and off-state leakage current can be implemented in high-density logic and microprocessor chips fabricated in a silicon die. In this book, the author explores other device parameters such as channel inversion carrier mobility and its characteristic evolution as temperature on the die varies from 100‒300 K. Channel mobility affects both on-state drain current and subthreshold drain current and both drain current behaviors at lower temperatures have been modeled accurately and simulated for a 1 $u$ m channel length $n$-MOSFET. In addition, subthreshold slope which is an indicator of how speedily the device drain current can be switched between near off current and maximum drain current is an important device attribute to model at lower operating substrate temperatures. This book is the first to illustrate the fact that a single subthreshold slope value which is generally reported in textbook plots and research articles, is erroneous and at lower gate voltage below inversion, subthreshold slope value exhibits a variation tendency on applied gate voltage below threshold, i.e., varying depletion layer and vertical field induced surface band bending variations at the MOSFET channel surface. The author also will critically review the state-of-the art effectiveness of certain device architectures presently prevalent in the semiconductor industry below 45 nm node from the perspectives of device physical analysis at lower substrate temperature operating conditions. The book concludes with an emphasis on modeling simulations, inviting the device professionals to meet the performance bottlenecks emanating from inceptives present at these lower temperatures of operation of today's 10 nm device architectures.

Power, Thermal, Noise and Signal Integrity Issues on substrate/Interconnects entanglEment

Автор: Ma
Название: Power, Thermal, Noise and Signal Integrity Issues on substrate/Interconnects entanglEment
ISBN: 0367023431 ISBN-13(EAN): 9780367023430
Издательство: Taylor&Francis
Рейтинг:
Цена: 16698 р.
Наличие на складе: Поставка под заказ.

Описание: New insights have to be developed in many domains, including electrical, thermal, noise, interconnects, and parasites. It is the entanglement of such domains that begins the very key challenge as we enter in 3D nano-electronics. This book aims to develop this new paradigm, going to a synthesis beginning between many technical aspects.

Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET

Автор: Nabil Shovon Ashraf
Название: Low Substrate Temperature Modeling Outlook of Scaled n-MOSFET
ISBN: 1681733854 ISBN-13(EAN): 9781681733852
Издательство: Eurospan
Рейтинг:
Цена: 7277 р.
Наличие на складе: Поставка под заказ.

Описание: Low substrate/lattice temperature (< 300 K) operation of $n$-MOSFET has been effectively studied by device research and integration professionals in CMOS logic and analog products from the early 1970s. The author of this book previously composed an e-book in this area where he and his co-authors performed original simulation and modeling work on MOSFET threshold voltage and demonstrated that through efficient manipulation of threshold voltage values at lower substrate temperatures, superior degrees of reduction of subthreshold and off-state leakage current can be implemented in high-density logic and microprocessor chips fabricated in a silicon die. In this book, the author explores other device parameters such as channel inversion carrier mobility and its characteristic evolution as temperature on the die varies from 100‒300 K. Channel mobility affects both on-state drain current and subthreshold drain current and both drain current behaviors at lower temperatures have been modeled accurately and simulated for a 1 $u$ m channel length $n$-MOSFET. In addition, subthreshold slope which is an indicator of how speedily the device drain current can be switched between near off current and maximum drain current is an important device attribute to model at lower operating substrate temperatures. This book is the first to illustrate the fact that a single subthreshold slope value which is generally reported in textbook plots and research articles, is erroneous and at lower gate voltage below inversion, subthreshold slope value exhibits a variation tendency on applied gate voltage below threshold, i.e., varying depletion layer and vertical field induced surface band bending variations at the MOSFET channel surface. The author also will critically review the state-of-the art effectiveness of certain device architectures presently prevalent in the semiconductor industry below 45 nm node from the perspectives of device physical analysis at lower substrate temperature operating conditions. The book concludes with an emphasis on modeling simulations, inviting the device professionals to meet the performance bottlenecks emanating from inceptives present at these lower temperatures of operation of today's 10 nm device architectures.


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