Описание: This book represents a significant advance in our understanding of the synthesis and properties of two-dimensional (2D) materials. The author’s work breaks new ground in the understanding of a number of 2D crystals, including atomically thin transition metal dichalcogenides, graphene, and their heterostructures, that are technologically important to next-generation electronics. In addition to critical new results on the direct growth of 2D heterostructures, it also details growth mechanisms, surface science, and device applications of “epi-grade” 2D semiconductors, which are essential to low-power electronics, as well as for extending Moore’s law. Most importantly, it provides an effective alternative to mechanically exfoliate 2D layers for practical applications.
Автор: M. Willander Название: Silicon-Germanium Strained Layers and Heterostructures, ISBN: 0127521836 ISBN-13(EAN): 9780127521831 Издательство: Elsevier Science Рейтинг: Цена: 29476.00 р. Наличие на складе: Поставка под заказ.
Описание: The study of Silicone Germanium strained layers has implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. This work describes its developments in technology and modelling. It also includes a bibliography of over 400 papers providing an overview of the subject.
This book mainly focuses on the study of the high-temperature superconductor Bi2Sr2CaCu2O8+? (Bi2212) and single-layer FeSe film grown on SrTiO3 (STO) substrate by means of angle-resolved photoemission spectroscopy (ARPES). It provides the first electronic evidence for the origin of the anomalous high-temperature superconductivity in single-layer FeSe grown on SrTiO3 substrate. Two coexisted sharp-mode couplings have been identified in superconducting Bi2212. The first ARPES study on single-layer FeSe/STO films has provided key insights into the electronic origin of superconductivity in this system. A phase diagram and electronic indication of high Tc and insulator to superconductor crossover have been established in the single-layer FeSe/STO films. Readers will find essential information on the techniques used and interesting physical phenomena observed by ARPES.
Описание: This thesis describes the results of angle resolved photoemission spectroscopy experiments on delafossite oxide metals, and theoretical work explaining these observations. The study was motivated by the extraordinarily high conductivity of the non-magnetic delafossites PdCoO2 and PtCoO2, the measurement of whose electronic structure is reported and discussed. Two unexpected effects were observed in the course of the investigation; each is described and analysed in detail. Firstly, a previously unrecognised type of spectroscopic signal, allowing the non-magnetic probe of photoemission to become sensitive to spin-spin correlations, was observed in the antiferromagnetic PdCrO2. Its origin was identified as the Kondo-like coupling of itinerant and Mott insulating electrons. Furthermore, surface states exhibiting an unusually large Rashba-like spin-splitting were observed on the transition metal terminated surfaces of delafossites. The large inversion symmetry breaking energy scale, a consequence of the unusual structure of the surface layer, is identified as the origin of the effect.
Описание: The author has designed a new, highly efficient mini Mott detector that has a large electron acceptance angle and an atomically flat gold target to enhance the efficiency of detecting scattered electrons.The author measured the electron and spin structure of Bi thin film grown on a Si(111) surface to study the Rashba effect.
Описание: The author has designed a new, highly efficient mini Mott detector that has a large electron acceptance angle and an atomically flat gold target to enhance the efficiency of detecting scattered electrons.The author measured the electron and spin structure of Bi thin film grown on a Si(111) surface to study the Rashba effect.
Автор: Eougenious L. Ivchenko; Grigory Pikus Название: Superlattices and Other Heterostructures ISBN: 3642644937 ISBN-13(EAN): 9783642644931 Издательство: Springer Рейтинг: Цена: 16769.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Superlattices and Other Heterostructures deals with optical properties of superlattices and quantum-well structures with emphasis on phenomena governed by crystal symmetries. After a brief introduction to group theory and symmetries, methods to calculate spectra of electrons, excitions and phonons in heterostructures are discussed. Further chapters cover absorption and reflection of light under interband transitions, cyclotron and electron spin-resoncance, light scattering by free and bound carriers and by optical and acoustic phonons, polarized photoluminescence, optical spin orientation of electrons and excitions, and nonlinear optical and photogalvanic effects.
Автор: Bimberg Название: Quantum Dot Heterostructures ISBN: 0471973882 ISBN-13(EAN): 9780471973881 Издательство: Wiley Рейтинг: Цена: 58283.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book presents a comprehensive overview of the most recent advances in the field, including the way such structures are grown, how experiments on the structures have clarified long-standing theoretical predictions, how the structures are characterized, and the performance of devices developed from the structures.
Описание: This book focuses on the study of the high-temperature superconductor Bi2Sr2CaCu2O8 by vacuum, ultra-violet, laser-based, angle-resolved photoemission spectroscopy (ARPES). It provides the evidence of a new form of electron coupling.
Автор: Mitin Vladimir V., Mitin V. V., Kochelap Viacheslav Название: Quantum Heterostructures: Microelectronics and Optoelectronics ISBN: 0521636353 ISBN-13(EAN): 9780521636353 Издательство: Cambridge Academ Рейтинг: Цена: 15523.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book provides a detailed description of the key physical and engineering principles of quantum semiconductor heterostructures. Blending important concepts from physics, materials science, and electrical engineering, it also explains clearly the behaviour and operating features of modern microelectronic and optoelectronic devices.
Описание: This thesis demonstrates that layered heterostructures of two-dimensional crystals graphene, hexagonal boron nitride, and transition metal dichalcogenides provide new and interesting interlayer transport phenomena.
Описание: This book represents a significant advance in our understanding of the synthesis and properties of two-dimensional (2D) materials. The author’s work breaks new ground in the understanding of a number of 2D crystals, including atomically thin transition metal dichalcogenides, graphene, and their heterostructures, that are technologically important to next-generation electronics. In addition to critical new results on the direct growth of 2D heterostructures, it also details growth mechanisms, surface science, and device applications of “epi-grade” 2D semiconductors, which are essential to low-power electronics, as well as for extending Moore’s law. Most importantly, it provides an effective alternative to mechanically exfoliate 2D layers for practical applications.
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