Advancing silicon carbide electronics technology ii,
Автор: Fraley Bill Название: Silicon Carbide Devices and Technology ISBN: 1632384140 ISBN-13(EAN): 9781632384140 Издательство: Неизвестно Цена: 25749.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book elaborately discusses the silicon carbide devices and their technology. Lately, a few Silicon Carbide (SiC ) power devices like metal-oxide-semiconductor field-effect-transistors (MOSFETs), Schottky-barrier diodes (SBDs), junction FETs (JFETs), and their combined modules have been introduced in the market. However, to securely supply them and decrease their cost, further enhancements for material characterizations as well as for device processing are still required. This book comprehensively elucidates current technologies on processing, modeling, characterization, manufacturing, and other important aspects of SiC devices. The aim of this book is to serve as a helpful source of information for advancements in SiC devices.
Описание: Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "Interfacial reactions in nickel/titanium ohmic contacts to n-type silicon carbide" by Jae Hyun Park, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.
Описание: Dissertation Discovery Company and University of Florida are dedicated to making scholarly works more discoverable and accessible throughout the world. This dissertation, "Interfacial reactions in nickel/titanium ohmic contacts to n-type silicon carbide" by Jae Hyun Park, was obtained from University of Florida and is being sold with permission from the author. A digital copy of this work may also be found in the university's institutional repository, IR@UF. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation.
Автор: Morath Christain M. Название: Electrical Characterization of Non-Implanted 4h-Silicon Carbide ISBN: 1286864267 ISBN-13(EAN): 9781286864265 Издательство: Неизвестно Рейтинг: Цена: 10658.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
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