Описание: Power devices are key to modern power systems, performing essential functions such as inverting and changing voltages, buffering and switching. The increasing complexity of power systems, with distributed renewable generation on the rise, is posing challenges to these devices. In recent years, several new devices have emerged, including wide bandgap devices, each with advantages and weaknesses depending on circumstances and applications.
With a device-centric approach, this book begins by introducing the operating principles of all key power electronic components present in todays power electronics. Further chapters cover junction diodes, thyristors, silicon MOSFETs, silicon IGBTs, IGCTs, SiC MOSFETs, GaN metal-insulator-semiconductor field-effect transistors (MIS-FETs), gallium nitride vertical transistors, module design and reliability, switching cell design, and modern insulated gate bipolar transistor (IGBT) gate driving methods for robustness and reliability. A final chapter outlines the prospects and outlooks in power electronics technology and its market.
This book addresses power device technology at the design level, by bridging the gap between semiconductor and materials science and power electronic applications. It provides key information for researchers working with power electronic devices and for power electronic application designers, and it is also a useful resource for academics and industrial researches working on power electronics at the system level, such as industrial machine designers and robot designers.
