This book addresses in-depth technical issues, limitations, considerations and challenges facing millimeter-wave (MMW) integrated circuit and system designers in designing MMW wireless communication systems from the complementary metal-oxide semiconductor (CMOS) perspective. It offers both a comprehensive explanation of fundamental theories and a broad coverage of MMW integrated circuits and systems.
CMOS Millimeter-Wave Integrated Circuits for Next Generation Wireless Communication Systems is an excellent reference for faculty, researchers and students working in electrical and electronic engineering, wireless communication, integrated circuit design and circuits and systems. While primarily written for upper-level undergraduate courses, it is also an excellent introduction to the subject for instructors, graduate students, researchers, integrated circuit designers and practicing engineers. Advanced readers could also benefit from this book as it includes many recent state-of-the-art MMW circuits.
Описание: This unique book provides an overview of the current state of the art and very recent research results that have been achieved as part of the Low-Power Initiative of the European Union, in the field of analogue, RF and mixed-signal design methodologies and CAD tools.
Автор: Fu Название: Integrated Power Devices and TCAD Simulation ISBN: 1138071854 ISBN-13(EAN): 9781138071858 Издательство: Taylor&Francis Рейтинг: Цена: 12554.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems.
Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs).
Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.
Автор: Ranjit Gharpurey; Peter Kinget Название: Ultra Wideband ISBN: 1441942467 ISBN-13(EAN): 9781441942463 Издательство: Springer Рейтинг: Цена: 19589.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The book includes chapters on Ultra Wideband transceiver implementations, pulse-based systems and one on the implementation for the WiMedia/MBOFDM approach. Another chapter discusses the implementation of the physical layer baseband, including the ADC and post-ADC processing required in the UWB system.
Описание: This book presents state-of-the-art analog and power management IC design techniques for various wireless power transfer (WPT) systems. To create elaborate power management solutions, circuit designers require an in-depth understanding of the characteristics of each converter and regulator in the power chain. This book addresses WPT design issues at both system- and circuit-level, and serves as a handbook offering design insights for research students and engineers in the integrated power electronics area.
Описание: This peer-reviewed book explores the methodologies that are used for effective research, design and innovation in the vast field of millimeter-wave circuits, and describes how these have to be modified to fit the uniqueness of high-frequency nanoelectronics design.
Part I. Next-Generation ADCs.- Chapter 1. Emerging ADCs.- Chapter 2. Noise-Shaping SAR ADCs.- Chapter 3. Efficient High-Resolution Nyquist ADCs.- Chapter 4. Continous-Time ADCs for Automative Applications.- Chapter 5. Continuous-Time Delta-Sigma Converters With Finite-Impulse-Response (FIR) Feedback.- Chapter 6. High-speed ADCs for Wireless Base-Stations.- Part II. High-Performance Power Management.- Chapter 7. Advanced Multiphasing: Pushing the Limits of Fully Integrated Switched-Capacitor Converters.- Chapter 8. Highly-Efficient Power Management in Wearables and IoT Devices.- Chapter 9. Current Sensing Techniques: Principles and Readouts.- Chapter 10. Wide Bandgap Integrated Circuits for High Power Management in Extreme Environments.- Chapter 11. On the Limits of Driving Wide-Bandgap Transistors.- Chapter 12. Challenges in Driving New Generations of Power Switches for Motor Drive: A dV/dt Self-Adjusting Architecture for Superjunction Power Devices.- Part III. Technology Considerations for Advanced IC.- Chapter 13. Silicon Technologies for the Next Age of Wireless Connectivity.- Chapter 14. IC Technologies for mm-Wave Applications.- Chapter 15. Accuracy: The Next Opportunity for MEMS.- Chapter 16. Robustness, Reliability and Diagnostic Aspects in Sensors for Automotive Applications: The Magnetic Sensors Case.- Chapter 17. Rad-Hard Mixed-Signal IC Design, Theory and Implementation.- Chapter 18.1-GRad-TID Effects in 28-nm Device Study for Rad-Hard Analog Design.
Chapter1: Taking the next step in GaN: bulk GaN substrates and GaN-on-Si epitaxy for electronics.- Chapter2: Lateral GaN HEMT structures.- Chapter3: Vertical GaN Transistors for Power Electronics.- Chapter4: Reliability of GaN-based Power devices.- Chapter5: Validating GaN robustness.- Chapter6: Impact of Parasitics on GaN Based Power Conversion.- Chapter7: GaN in AC/DC Power Converters.- Chapter8: GaN in Switched Mode Power Amplifiers.
Автор: Cheema, Hammad M Khalid, Fatima Shamim, Atif Название: Co-design of integrated circuits and on ISBN: 1608078183 ISBN-13(EAN): 9781608078189 Издательство: Artech House Рейтинг: Цена: 21067.00 р. Наличие на складе: Нет в наличии.
Описание: Antennas are essential part of every wireless communication system. The increasing trend of applications in the radio frequency (RF) and millimeter wave frequency spectrum has reduced the antenna sizes to only a few millimeters, which makes it practical for on-chip implementations. Integrated Circuit (IC) designers who have traditionally remained isolated from antenna design now need to understand its design process and trade-offs. This comprehensive resource addresses the challenges, benefits and trade-offs of on-chip antenna implementation.It presents practical design and integration considerations of the IC and antenna combination and how both ends of the system can be utilized in a complimentary way. The book includes on-chip antenna layout considerations, layout for testability and various methods of their characterization. A look at the future trends and utilization of on-chip antennas for different applications concludes the book.
Автор: Todri-Sanial Aida, Tan Chuan Seng Название: Physical Design for 3D Integrated Circuits ISBN: 0367778874 ISBN-13(EAN): 9780367778873 Издательство: Taylor&Francis Рейтинг: Цена: 10104.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book reveals how to effectively and optimally design 3D integrated circuits (ICs). It also analyzes the design tools for 3D circuits while exploiting the benefits of 3D technology. The book begins by offering an overview of physical design challenges with respect to conventional 2D circuits, and then each chapter delivers an in-depth look a
Автор: Gielen Georges Название: Time-Encoding Vco-Adcs for Integrated Systems-On-Chip ISBN: 3030880664 ISBN-13(EAN): 9783030880668 Издательство: Springer Рейтинг: Цена: 9083.00 р. Наличие на складе: Поставка под заказ.
Описание: This book demonstrates why highly-digital CMOS time-encoding analog-to-digital converters incorporating voltage-controlled oscillators (VCOs) and time-to-digital converters (TDCs) are a good alternative to traditional switched-capacitor S-D modulators for power-efficient sensor, biomedical and communications applications. The authors describe the theoretical foundations and design methodology of such time-based ADCs from the basics to the latest developments. While most analog designers might notice some resemblance to PLL design, the book clearly highlights the differences to standard PLL circuit design and illustrates the design methodology with practical circuit design examples. * Describes in detail the design methodology for CMOS time-encoding analog-to-digital converters that can be integrated along with digital logic in a nanometer System on Chip; * Assists analog designers with the necessary change in design paradigm, highlighting differences between designing time-based ADCs and traditional analog circuits like switched-capacitor converters and PLLs; * Uses a highly-visual, tutorial approach to the topic, including many practical examples of techniques introduced.
Автор: Cristiano Calligaro, Umberto Gatti Название: Radiation Hardening by Design (RHBD) Analog Integrated Circuits ISBN: 8770224196 ISBN-13(EAN): 9788770224192 Издательство: Mare Nostrum (Eurospan) Рейтинг: Цена: 13652.00 р. Наличие на складе: Нет в наличии.
Описание: The book is intended for researchers and professionals interested in understanding how to design and make a preliminary characterization of Radiation Hardened (rad-hard) analog and mixed-signal circuits, exploiting standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes.
It starts with an introductory overview of the effects of radiation in space and harsh environments with a specific focus on analog circuits to enable the reader to understand why specific design solutions are adopted to mitigate hard/soft errors. The following four Chapters are devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components applied to Operational Amplifiers, Voltage References, Analog-to-Digital (ADC) and Digital-to-Analog (DAC) converters. Each Chapter is organized with a first part which recalls the basic working principles of such circuit and a second part which describes the main RHBD techniques proposed in the literature to make them resilient to radiation. The approach follows a top-down scheme starting from RHBD at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and finishing at layout level (how to shape a layout to mitigate radiation effects).
The last-but-one Chapter is devoted to a special class of analog circuit, the dosimeters, which are gaining importance in space, health and nuclear applications. By leveraging the characteristic of a Flash-memory cell, a re-usable dosimeter is described which includes the sensitive element itself, the analog interface and the process of characterization. The last part is an overview of the strategies adopted for the testing of analog and mixed-signal circuits. In particular, it will focus also on the measurement campaigns performed by the Authors aiming for the characterization of developed rad-hard components under total dose (TID) and single-events (SEE).
Technical topics discussed in the book include:
Radiation effects on semiconductor components (TID, SEE)
Radiation Hardening by Design (RHBD) Techniques
Rad-hard Operational Amplifiers
Rad-hard Voltage References
Rad-hard ADC
Rad-hard DAC
Rad-hard Special Circuits
Testing Strategies
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