Advances in Optoelectronic Materials, Ikhmayies Shadia Jamil, Kurt Hatice Hilal
Автор: Vladimir V. Mitin, Viacheslav A. Kochelap, Mitra Dutta, Michael A. Stroscio Название: Introduction to Optical and Optoelectronic Properties of Nanostructures ISBN: 1108428142 ISBN-13(EAN): 9781108428149 Издательство: Cambridge Academ Рейтинг: Цена: 14731.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Get to grips with the fundamental properties of optical and optoelectronic nanostructures. This comprehensive guide is accessible for students and practitioners in disciplines such as nanoscience, physics, electrical engineering, and materials science, and includes detailed mathematical derivations, worked examples and end-of-chapter problems.
This proceedings brings together 59 selected articles presented at the joint conferences of the International Conference on Management, Information and Communication (ICMIC2016) and the International Conference on Optics and Electronics Engineering (ICOEE2016), which were held in Guilin, China, during May 28-29, 2016.
ICMIC2016 and ICOEE2016 provide a platform for researchers, engineers, academicians as well as industrial professionals from all over the world to present their latest findings and results in the development in Information Management, Communication, Optics and Electronics host by ICMIC2016 and ICOEE2016.
The proceedings collected the latest research results and applications in the related areas. We hope to enlighten readers with some latest developments in Information Management, and Optics Electronics presented at the joint conferences.
Groundbreaking book that combines information on power electronics and optoelectronic applications of nitride semiconductors
With contributions from a panel of international experts, Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices offers a state-of-the-art review of GaN-based technologies that covers the fields of both power electronics and optoelectronic devices. The authors present detailed explanations of the physical properties of materials and their growth methods. They also include information on GaN-based technology applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers.
Nitride Semiconductor Technology contains an in-depth examination of reliability issues with the materials and offers advice on integrating them with 2D materials for novel high-frequency and high-power devices. The book also contains a review of the most recent advances in the field. This important book:
Presents an in-depth overview of properties, growth techniques, and applicability of nitride semiconductors
Offers a one-stop resource that covers nitride semiconductor technology from materials to devices
Reviews a widerange of nitride semiconductor applications in high-power and high-frequency devices
Written for materials scientists, semiconductor physicists, semiconductor industry professionals, electrical engineers, and electrotechnical industry professionals, Nitride Semiconductor Technology: Power Electronics and Optoelectronic Devices combines the most recent information on power electronics and optoelectronic applications of nitride semiconductors.
Автор: Yongfang Li Название: Organic Optoelectronic Materials ISBN: 3319168614 ISBN-13(EAN): 9783319168616 Издательство: Springer Рейтинг: Цена: 19591.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This volume reviews the latest trends in organic optoelectronic materials. The molecular structures, synthesis methods, physicochemical and optoelectronic properties of the organic optoelectronic materials are also introduced and described in detail.
Автор: Yongfang Li Название: Organic Optoelectronic Materials ISBN: 3319344439 ISBN-13(EAN): 9783319344430 Издательство: Springer Рейтинг: Цена: 14365.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This volume reviews the latest trends in organic optoelectronic materials. The molecular structures, synthesis methods, physicochemical and optoelectronic properties of the organic optoelectronic materials are also introduced and described in detail.
Описание: This thesis focuses on the transport and magneto-transport properties of graphene p-n-p junctions, such as the pronounced quantum Hall effect, a well-defined plateau-plateau transition point, and scaling behavior.
Описание: As one of the typical intermolecular interactions, hydrogen-bonding plays a significant role in molecular structure and function. When the hydrogen bond research system is connected with the photon, the hydrogen-bonding effect turns to an excited-state one influencing photochemistry, photobiology, and photophysics. Thus, the hydrogen bond in an excited state is a key topic for understanding the excited-state properties, especially for optoelectronic or luminescent materials.The approaches presented in this book include quantum chemical calculation, molecular dynamics simulation and ultrafast spectroscopy, which are strong tools to investigate the hydrogen bond. Unlike other existing titles, this book combines theoretical calculations and experiments to explore the nature of excited-state hydrogen bonds. By using these methods, more details and faster processes involved in excited-state dynamics of hydrogen bond are explored.This highly interdisciplinary book provides an overview of leading hydrogen bond research. It is essential reading for faculties and students in researching photochemistry, photobiology and photophysics, as well as novel optoelectronic materials, fluorescence probes and photocatalysts. It will also guide research beginners to getting a quick start within this field.
Автор: Bao, Qiaoliang Название: 2D Materials For Photonic And Optoelectronic Applications ISBN: 0081026374 ISBN-13(EAN): 9780081026373 Издательство: Elsevier Science Рейтинг: Цена: 25265.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
2D Materials for Photonic and Optoelectronic Applications introduces readers to two-dimensional materials and their properties (optical, electronic, spin and plasmonic), various methods of synthesis, and possible applications, with a strong focus on novel findings and technological challenges. The two-dimensional materials reviewed include hexagonal boron nitride, silicene, germanene, topological insulators, transition metal dichalcogenides, black phosphorous and other novel materials. This book will be ideal for students and researchers in materials science, photonics, electronics, nanotechnology and condensed matter physics and chemistry, providing background for both junior investigators and timely reviews for seasoned researchers.
Описание: This thesis focuses on the transport and magneto-transport properties of graphene p-n-p junctions, such as the pronounced quantum Hall effect, a well-defined plateau–plateau transition point, and scaling behavior. In addition, it demonstrates persistent photoconductivity (PPC) in the monolayer MoS2 devices, an effect that can be attributed to random localized potential fluctuations in the devices. Further, it studies scaling behavior at zeroth Landau level and high performance of fractional values of quantum Hall plateaus in these graphene p-n-p devices. Moreover, it demonstrates a unique and efficient means of controlling the PPC effect in monolayer MoS2. This PPC effect may offer novel functionalities for MoS2-based optoelectronic applications in the future.
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