Charge-Trapping Non-Volatile Memories: Volume 2--Emerging Materials and Structures, Dimitrakis Panagiotis
Автор: Swaroop Ghosh Название: Sensing of Non-Volatile Memory Demystified ISBN: 3030073394 ISBN-13(EAN): 9783030073398 Издательство: Springer Рейтинг: Цена: 13974.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book introduces readers to the latest advances in sensing technology for a broad range of non-volatile memories (NVMs). Challenges across the memory technologies are highlighted and their solutions in mature technology are discussed, enabling innovation of sensing technologies for future NVMs. Coverage includes sensing techniques ranging from well-established NVMs such as hard disk, flash, Magnetic RAM (MRAM) to emerging NVMs such as ReRAM, STTRAM, FeRAM and Domain Wall Memory will be covered.
Автор: Panagiotis Dimitrakis Название: Charge-Trapping Non-Volatile Memories ISBN: 3319487035 ISBN-13(EAN): 9783319487038 Издательство: Springer Рейтинг: Цена: 18167.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Автор: Lacaze Название: Non-volatile Memories ISBN: 1848216238 ISBN-13(EAN): 9781848216235 Издательство: Wiley Рейтинг: Цена: 22010.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.
Описание: This book provides students and practicing chip designers with an easy-to-follow yet thorough, introductory treatment of the most promising emerging memories under development in the industry.
Автор: Seungbum Hong; Orlando Auciello; Dirk Wouters Название: Emerging Non-Volatile Memories ISBN: 1489975365 ISBN-13(EAN): 9781489975362 Издательство: Springer Рейтинг: Цена: 18284.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing summarizes advances in the development of photo-electroactive memories and neuromorphic computing systems, suggests possible solutions to the challenges of device design, and evaluates the prospects for commercial applications. Sections covers developments in electro-photoactive memory, and photonic neuromorphic and in-memory computing, including discussions on design concepts, operation principles and basic storage mechanism of optoelectronic memory devices, potential materials from organic molecules, semiconductor quantum dots to two-dimensional materials with desirable electrical and optical properties, device challenges, and possible strategies.
This comprehensive, accessible and up-to-date book will be of particular interest to graduate students and researchers in solid-state electronics. It is an invaluable systematic introduction to the memory characteristics, operation principles and storage mechanisms of the latest reported electro-photoactive memory devices.
Reviews the most promising materials to enable emerging computing memory and data storage devices, including one- and two-dimensional materials, metal oxides, semiconductors, organic materials, and more
Discusses fundamental mechanisms and design strategies for two- and three-terminal device structures
Addresses device challenges and strategies to enable translation of optical and optoelectronic technologies
Автор: Giovanni Campardo; Rino Micheloni; David Novosel Название: VLSI-Design of Non-Volatile Memories ISBN: 3642057748 ISBN-13(EAN): 9783642057748 Издательство: Springer Рейтинг: Цена: 28732.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: The design of integrated circuits today remains an essential discipline in s- port of technological progress, and the authors of this book have taken a giant step forward in the development of a practice-oriented treatise for design engineers who are interested in the practical, industry-driven world of integrated circuit - sign.
Автор: Rino Micheloni; A. Marelli; R. Ravasio Название: Error Correction Codes for Non-Volatile Memories ISBN: 9048178649 ISBN-13(EAN): 9789048178643 Издательство: Springer Рейтинг: Цена: 20896.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book presents the basics of coding theory needed to understand the application to memories, as well as the relevant design topics, with reference to both NOR and NAND Flash architectures. It also includes a collection of software routines.
Автор: Hao Yu; Yuhao Wang Название: Design Exploration of Emerging Nano-scale Non-volatile Memory ISBN: 1493905503 ISBN-13(EAN): 9781493905508 Издательство: Springer Рейтинг: Цена: 19564.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: With focused coverage of key topics ranging from device fabrication to hybrid NVM memory system design-space optimization, this systematic treatment of emerging nano-scale NVM devices adopts a circuits/systems perspective that includes memristic dynamics.
Автор: Nayfeh, Ammar Название: Nanomaterials-Based Charge Trapping Memory Devices ISBN: 0128223421 ISBN-13(EAN): 9780128223420 Издательство: Elsevier Science Рейтинг: Цена: 23749.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Rising consumer demand for low power consumption electronics has generated a need for scalable and reliable memory devices with low power consumption. At present, scaling memory devices and lowering their power consumption is becoming more difficult due to unresolved challenges, such as short channel effect, Drain Induced Barrier Lowering (DIBL), and sub-surface punch-through effect, all of which cause high leakage currents. As a result, the introduction of different memory architectures or materials is crucial.
Nanomaterials-based Charge Trapping Memory Devices provides a detailed explanation of memory device operation and an in-depth analysis of the requirements of future scalable and low powered memory devices in terms of new materials properties. The book presents techniques to fabricate nanomaterials with the desired properties. Finally, the book highlights the effect of incorporating such nanomaterials in memory devices.
This book is an important reference for materials scientists and engineers, who are looking to develop low-powered solutions to meet the growing demand for consumer electronic products and devices.
Автор: Nishi, Yoshio Название: Advances in Non-volatile Memory and Storage Technology ISBN: 008102584X ISBN-13(EAN): 9780081025840 Издательство: Elsevier Science Рейтинг: Цена: 30318.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included.
This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices.
Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories
Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses
Examines improvements to flash technology, charge trapping and resistive random access memory
Автор: Swaroop Ghosh Название: Sensing of Non-Volatile Memory Demystified ISBN: 3319973452 ISBN-13(EAN): 9783319973456 Издательство: Springer Рейтинг: Цена: 13974.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: This book introduces readers to the latest advances in sensing technology for a broad range of non-volatile memories (NVMs). Challenges across the memory technologies are highlighted and their solutions in mature technology are discussed, enabling innovation of sensing technologies for future NVMs. Coverage includes sensing techniques ranging from well-established NVMs such as hard disk, flash, Magnetic RAM (MRAM) to emerging NVMs such as ReRAM, STTRAM, FeRAM and Domain Wall Memory will be covered.
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