Автор: Robert K. Willardson Название: Processing and Properties of Compound Semiconductors,73 ISBN: 0127521828 ISBN-13(EAN): 9780127521824 Издательство: Elsevier Science Рейтинг: Цена: 31686.00 р. Наличие на складе: Поставка под заказ.
Название: III–V Compound Semiconductors ISBN: 0367383268 ISBN-13(EAN): 9780367383268 Издательство: Taylor&Francis Рейтинг: Цена: 10104.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors.
III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues.
Explores silicon-based CMOS applications developed within the cutting-edge DARPA program
Providing an overview of systems, devices, and their component materials, this book:
Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges
Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors
Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics
Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes
Introduces novel technologies for the measurement and evaluation of material quality and device properties
Описание: This book provides a brand new treatment of Ancient Greek (AG) verb-first (V1) compounds. In AG, the very existence of this type is surprising: its left-oriented structure goes against the right-oriented structure of the compound system, in which there also exists a large class of verb-final (V2) compounds (many of which express the same agentive semantics). While past studies have privileged either the historical dimension or the assessment of semantic and stylistic issues over a systematic analysis of V1 compounds, this book provides a comprehensive corpus of appellative and onomastic forms, which are studied vis-a-vis V2 ones. The diachronic dimension (how these compounds developed from late PIE to AG and then within AG) is combined with the synchronic one (how they are used in specific contexts) in order to show that, far from being anomalous, V1 compounds fill lexical gaps that could not, for specified morphological and semantic reasons, be filled by more ‘regular’ V2 ones. Introductory chapters on compounding in morphological theory and in AG place the multi-faceted approach of this book in a modern perspective, highlighting the importance of AG for linguists debating the properties of the V1 type cross-linguistically.
Автор: Ching-Hua Su Название: Vapor Crystal Growth and Characterization ISBN: 3030396541 ISBN-13(EAN): 9783030396541 Издательство: Springer Рейтинг: Цена: 13974.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание:
The book describes developments in the crystal growth of bulk II-VI semiconductor materials. A fundamental, systematic, and in-depth study of the physical vapor transport (PVT) growth process is the key to producing high-quality single crystals of semiconductors. As such, the book offers a comprehensive overview of the extensive studies on ZnSe and related II-VI wide bandgap compound semiconductors, such as CdS, CdTe, ZnTe, ZnSeTe and ZnSeS. Further, it shows the detailed steps for the growth of bulk crystals enabling optical devices which can operate in the visible spectrum for applications such as blue light emitting diodes, lasers for optical displays and in the mid-IR wavelength range, high density recording, and military communications.
The book then discusses the advantages of crystallization from vapor compared to the conventional melt growth: lower processing temperatures, the purification process associated with PVT, and the improved surface morphology of the grown crystals, as well as the necessary drawbacks to the PVT process, such as the low and inconsistent growth rates and the low yield of single crystals. By presenting in-situ measurements of transport rate, partial pressures and interferometry, as well as visual observations, the book provides detailed insights into in the kinetics during the PVT process.
This book is intended for graduate students and professionals in materials science as well as engineers preparing and developing optical devices with semiconductors.
Автор: Laurie Bauer Название: Compounds and Compounding ISBN: 1108416039 ISBN-13(EAN): 9781108416030 Издательство: Cambridge Academ Рейтинг: Цена: 12830.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Are compounds words or phrases, neither or both? How should we classify compounds? Are compounds a linguistic universal? Why do we need compounds, when there are other ways of creating the same meanings? Based on over forty years` research, this controversial new book aims to answer these and other questions.
Описание: Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors.
Автор: Suresh Jain; Magnus Willander; R. Van Overstraeten Название: Compound Semiconductors Strained Layers and Devices ISBN: 0792377699 ISBN-13(EAN): 9780792377696 Издательство: Springer Рейтинг: Цена: 26122.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Provides an overview of work done on strain, dislocations and mechanical properties of strained layers. This book discusses the effects of strain on band structure, transport, and optical properties of both the zinc blende and the wurtzite compound semiconductors, and Piezoelectric Effects and Quantum Confined Stark Effects.
Автор: Kamakhya Prasad Ghatak; Sitangshu Bhattacharya; De Название: Einstein Relation in Compound Semiconductors and Their Nanostructures ISBN: 3540795561 ISBN-13(EAN): 9783540795568 Издательство: Springer Рейтинг: Цена: 30606.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Deals with the Einstein relation in compound semiconductors and their nanostructures. This book considers materials such as nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, and inversion layers.
Автор: Kamakhya Prasad Ghatak; Sitangshu Bhattacharya; De Название: Einstein Relation in Compound Semiconductors and Their Nanostructures ISBN: 3642098495 ISBN-13(EAN): 9783642098499 Издательство: Springer Цена: 30606.00 р. Наличие на складе: Есть у поставщика Поставка под заказ.
Описание: Basics of the Einstein Relation.- The Einstein Relation in Bulk Specimens of Compound Semiconductors.- The Einstein Relation in Compound Semiconductors Under Magnetic Quantization.- The Einstein Relation in Compound Semiconductors Under Crossed Fields Configuration.- The Einstein Relation in Compound Semiconductors Under Size Quantization.- The Einstein Relation in Quantum Wires of Compound Semiconductors.- The Einstein Relation in Inversion Layers of Compound Semiconductors.- The Einstein Relation in Nipi Structures of Compound Semiconductors.- The Einstein Relation in Superlattices of Compound Semiconductors in the Presence of External Fields.- The Einstein Relation in Compound Semiconductors in the Presence of Light Waves.- The Einstein Relation in Compound Semiconductors Under Magnetic Quantization.- Conclusion and Future Research.
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