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Crystal Structure,Electronic and Optical Properties of Epitaxial Alkaline Earth Niobate Thin Films, Dongyang Wan


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Автор: Dongyang Wan
Название:  Crystal Structure,Electronic and Optical Properties of Epitaxial Alkaline Earth Niobate Thin Films
ISBN: 9783319881294
Издательство: Springer
Классификация:


ISBN-10: 3319881299
Обложка/Формат: Soft cover
Страницы: 120
Вес: 0.22 кг.
Дата издания: 2017
Серия: Springer Theses
Язык: English
Издание: Softcover reprint of
Иллюстрации: 72 tables, color; 41 illustrations, color; 32 illustrations, black and white; xvi, 120 p. 73 illus., 41 illus. in color.
Размер: 235 x 155
Читательская аудитория: Professional & vocational
Основная тема: Physics
Ссылка на Издательство: Link
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Поставляется из: Германии
Описание: This impressive thesis offers a comprehensive scientific study of the alkaline earth niobates and describes their nonlinear optical properties for the first time.


Crystal Structure,Electronic and Optical Properties of Epitaxial Alkaline Earth Niobate Thin Films

Автор: Dongyang Wan
Название: Crystal Structure,Electronic and Optical Properties of Epitaxial Alkaline Earth Niobate Thin Films
ISBN: 3319659111 ISBN-13(EAN): 9783319659114
Издательство: Springer
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Цена: 15372.00 р.
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Описание: This impressive thesis offers a comprehensive scientific study of the alkaline earth niobates and describes their nonlinear optical properties for the first time.

Electronic Structure and Optical Properties of Semiconductors

Автор: Marvin L. Cohen; James R. Chelikowsky
Название: Electronic Structure and Optical Properties of Semiconductors
ISBN: 3540513914 ISBN-13(EAN): 9783540513919
Издательство: Springer
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Цена: 9141.00 р.
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Описание: We began planning and writing this book in thc late 1970$ at thc ugge s stion of Manuel Cardona and Helmut Latsch. We also received considerable eo- couragement and stimulation from colleagues. Same said there was a need for instructional material in tbis area while others emphasized thc utility of a research text. We tried to strike a compromise. Thc figures, tables, and rcferences are included to enable researchcrs to obt81o quickly essential information in this area of semiconductor research. For instructoTS and stu- dents, we attempt to cover same basic ideas abaut electronic structure and semiconductor physics with applications to real, rather than model, solids. Ve \Vish to thank our colleagues and collaborators whose research rc- sults and ideas are presented here. Special thanks are duc to Jim Phillips who illfluellced lIS hoth during ollr formative )'ears and afterwards. We are grateful to Sari Yamagishi for her patience and skill with the typing and production of the manuscript. Finally, we acknowledge the great patience of Helmut Lotsch and Manucl Cardona. llerkeley, CA M.L. Gehen - inncapolis, MN, J.R, Chelikew"ky March 1988 VII Contents 1. Introduction 1 2. Theoretical Concepts and Methods .................... . 4 2.1 Thc One-Electron Model and Band Structure 7 2.2 Properties cf En(k) ......................... . 11 3. Pseudopotentials 16 3.1 The Empirical Pseudopotential Method .......... 20 3.2 Self-Consistent and Ab Initio Pseudopotentials ...... ..... 25 4. Response Functiolls and Density of States . ..

Optical Characterization of Epitaxial Semiconductor Layers

Автор: G?nther Bauer; Wolfgang Richter
Название: Optical Characterization of Epitaxial Semiconductor Layers
ISBN: 364279680X ISBN-13(EAN): 9783642796807
Издательство: Springer
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Цена: 14365.00 р.
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Описание: The characterization of epitaxial layers and their surfaces has benefitted a lot from the enormous progress of optical analysis techniques during the last decade.

Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide

Автор: Samuel J. Magorrian
Название: Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide
ISBN: 3030257142 ISBN-13(EAN): 9783030257149
Издательство: Springer
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Цена: 18167.00 р.
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Описание: This thesis provides the first comprehensive theoretical overview of the electronic and optical properties of two dimensional (2D) Indium Selenide: atomically thin films of InSe ranging from monolayers to few layers in thickness. The thesis shows how the electronic propertes of 2D InSe vary significantly with film thickness, changing from a weakly indirect semiconductor for the monolayer to a direct gap material in the bulk form, with a strong band gap variation with film thickness predicted and recently observed in optical experiments. The proposed theory is based on a specially designed hybrid k.p tight-binding model approach (HkpTB), which uses an intralayer k.p Hamiltonian to describe the InSe monolayer, and tight-binding-like interlayer hopping. Electronic and optical absorption spectra are determined, and a detailed description of subbands of electrons in few-layer films and the influence of spin-orbit coupling is provided. The author shows that the principal optical excitations of InSe films with the thickness from 1 to 15 layers broadly cover the visible spectrum, with the possibility of extending optical functionality into the infrared and THz range using intersubband transitions.

Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide

Автор: Magorrian Samuel J.
Название: Theory of Electronic and Optical Properties of Atomically Thin Films of Indium Selenide
ISBN: 3030257177 ISBN-13(EAN): 9783030257170
Издательство: Springer
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Цена: 13974.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: This thesis provides the first comprehensive theoretical overview of the electronic and optical properties of two dimensional (2D) Indium Selenide: atomically thin films of InSe ranging from monolayers to few layers in thickness.


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