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Epitaxy of Semiconductors: Physics and Fabrication of Heterostructures, Pohl Udo W.


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Автор: Pohl Udo W.
Название:  Epitaxy of Semiconductors: Physics and Fabrication of Heterostructures
ISBN: 9783030438715
Издательство: Springer
Классификация:




ISBN-10: 3030438716
Обложка/Формат: Paperback
Страницы: 535
Вес: 0.77 кг.
Дата издания: 22.07.2021
Язык: English
Размер: 23.39 x 15.60 x 2.87 cm
Ссылка на Издательство: Link
Поставляется из: Германии
Описание: The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy.


Spin Spirals and Charge Textures in Transition-Metal-Oxide Heterostructures

Автор: Alex Frano
Название: Spin Spirals and Charge Textures in Transition-Metal-Oxide Heterostructures
ISBN: 3319361538 ISBN-13(EAN): 9783319361536
Издательство: Springer
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Цена: 13059.00 р.
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Описание: This thesis presents the results of resonant and non-resonant x-ray scattering experiments demonstrating the control of collective ordering phenomena in epitaxial nickel-oxide and copper-oxide based superlattices.

Ordering Phenomena in Rare-Earth Nickelate Heterostructures

Автор: Matthias Hepting
Название: Ordering Phenomena in Rare-Earth Nickelate Heterostructures
ISBN: 3319605305 ISBN-13(EAN): 9783319605302
Издательство: Springer
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Цена: 15372.00 р.
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Описание: Introduction: Transition Metal Oxides and their Heterostructures.- The Rare-earth Nickelates.- Experimental Techniques.- Tunable Order Parameters in Nickelate Heterostructures.- Complex Magnetic Order in Nickelate Slabs.

Electronic Properties of Graphene Heterostructures with Hexagonal Crystals

Автор: John R. Wallbank
Название: Electronic Properties of Graphene Heterostructures with Hexagonal Crystals
ISBN: 3319384082 ISBN-13(EAN): 9783319384085
Издательство: Springer
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Цена: 13059.00 р.
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Описание: The development of methods for manufacturing and aligning high-quality two-dimensional crystals has facilitated the creation of a new generation of materials: the heterostructures of graphene with hexagonal crystals, in which the graphene electrons acquire new, qualitatively different properties.

Controlled Synthesis and Scanning Tunneling Microscopy Study of Graphene and Graphene-Based Heterostructures

Автор: Mengxi Liu
Название: Controlled Synthesis and Scanning Tunneling Microscopy Study of Graphene and Graphene-Based Heterostructures
ISBN: 9811051801 ISBN-13(EAN): 9789811051807
Издательство: Springer
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Цена: 16769.00 р.
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Описание:

This thesis focuses on the energy band engineering of graphene. It presents pioneering findings on the controlled growth of graphene and graphene-based heterostructures, as well as scanning tunneling microscopy/scanning tunneling spectroscopy (STM/STS) studies on their electronic structures. The thesis primarily investigates two classes of graphene-based systems: (i) twisted bilayer graphene, which was synthesized on Rh substrates and manifests van Hove singularities near Fermi Level, and (ii) in-plane h-BN-G heterostructures, which were controllably synthesized in an ultrahigh vacuum chamber and demonstrate intriguing electronic properties on the interface. In short, the thesis offers revealing insights into the energy band engineering of graphene-based nanomaterials, which will greatly facilitate future graphene applications.


Quantum Heterostructures: Microelectronics and Optoelectronics

Автор: Mitin Vladimir V., Mitin V. V., Kochelap Viacheslav
Название: Quantum Heterostructures: Microelectronics and Optoelectronics
ISBN: 0521631777 ISBN-13(EAN): 9780521631778
Издательство: Cambridge Academ
Цена: 27403.00 р.
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Описание: This book provides a detailed description of the key physical and engineering principles of quantum semiconductor heterostructures. Blending important concepts from physics, materials science, and electrical engineering, it also explains clearly the behaviour and operating features of modern microelectronic and optoelectronic devices.

Electronic States and Optical Transitions in Semiconductor Heterostructures

Автор: Fedor T. Vasko; Alex V. Kuznetsov
Название: Electronic States and Optical Transitions in Semiconductor Heterostructures
ISBN: 0387985670 ISBN-13(EAN): 9780387985671
Издательство: Springer
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Цена: 11753.00 р.
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Описание: Heterostructures, made by growing several ultrathin layers of different materials on silicon substrates, have remarkable properties not shared by bulk materials. This book examines the theoretical basis and experimental knowledge underlying our understanding of the electronic and optical properties of semiconductor heterostructures.

Electronic Properties of Graphene Heterostructures with Hexagonal Crystals

Автор: John R. Wallbank
Название: Electronic Properties of Graphene Heterostructures with Hexagonal Crystals
ISBN: 331907721X ISBN-13(EAN): 9783319077215
Издательство: Springer
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Цена: 18167.00 р.
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Описание: The development of methods for manufacturing and aligning high-quality two-dimensional crystals has facilitated the creation of a new generation of materials: the heterostructures of graphene with hexagonal crystals, in which the graphene electrons acquire new, qualitatively different properties.

Epitaxy of Semiconductors: Physics and Fabrication of Heterostructures

Автор: Pohl Udo W.
Название: Epitaxy of Semiconductors: Physics and Fabrication of Heterostructures
ISBN: 3030438686 ISBN-13(EAN): 9783030438685
Издательство: Springer
Рейтинг:
Цена: 11878.00 р.
Наличие на складе: Есть у поставщика Поставка под заказ.

Описание: The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy.

Silicon-Germanium Strained Layers and Heterostructures,

Автор: M. Willander
Название: Silicon-Germanium Strained Layers and Heterostructures,
ISBN: 0127521836 ISBN-13(EAN): 9780127521831
Издательство: Elsevier Science
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Цена: 29476.00 р.
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Описание: The study of Silicone Germanium strained layers has implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. This work describes its developments in technology and modelling. It also includes a bibliography of over 400 papers providing an overview of the subject.

Thin Films and Heterostructures for Oxide Electronics

Автор: Satishchandra B. Ogale
Название: Thin Films and Heterostructures for Oxide Electronics
ISBN: 1441938389 ISBN-13(EAN): 9781441938381
Издательство: Springer
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Цена: 26120.00 р.
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Описание: Oxides form a broad subject area of research and technology development which encompasses different disciplines such as materials science, solid state chemistry, physics etc.

Nanomechanics in van der Waals Heterostructures

Автор: Holwill Matthew
Название: Nanomechanics in van der Waals Heterostructures
ISBN: 3030185311 ISBN-13(EAN): 9783030185312
Издательство: Springer
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Цена: 13974.00 р.
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Quantized Phenomena of Transport and Magneto-Optics in Magnetic Topological Insulator Heterostructures

Автор: Mogi Masataka
Название: Quantized Phenomena of Transport and Magneto-Optics in Magnetic Topological Insulator Heterostructures
ISBN: 9811921369 ISBN-13(EAN): 9789811921360
Издательство: Springer
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Цена: 22359.00 р.
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Описание: This book presents experimental studies on emergent transport and magneto-optical properties in three-dimensional topological insulators with two-dimensional Dirac fermions on their surfaces. Designing magnetic heterostructures utilizing a cutting-edge growth technique (molecular beam epitaxy) stabilizes and manifests new quantization phenomena, as confirmed by low-temperature electrical transport and time-domain terahertz magneto-optical measurements. Starting with a review of the theoretical background and recent experimental advances in topological insulators in terms of a novel magneto-electric coupling, the author subsequently explores their magnetic quantum properties and reveals topological phase transitions between quantum anomalous Hall insulator and trivial insulator phases; a new topological phase (the axion insulator); and a half-integer quantum Hall state associated with the quantum parity anomaly. Furthermore, the author shows how these quantum phases can be significantly stabilized via magnetic modulation doping and proximity coupling with a normal ferromagnetic insulator. These findings provide a basis for future technologies such as ultra-low energy consumption electronic devices and fault-tolerant topological quantum computers.


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